公开(公告)号：US07564064B2

公开(公告)日：2009-07-21

申请号：US11682770

申请日：2007-03-06

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L27/15

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US07553370B2

公开(公告)日：2009-06-30

申请号：US11311017

申请日：2005-12-19

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： C30B25/16

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

摘要： Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

公开(公告)号：US20090135449A1

公开(公告)日：2009-05-28

申请号：US12277452

申请日：2008-11-25

申请人： Takeshi Watanabe ,  Nobuhiko Nakahara ,  Shigeru Fujiwara ,  Hiroyuki Okuyama

发明人： Takeshi Watanabe ,  Nobuhiko Nakahara ,  Shigeru Fujiwara ,  Hiroyuki Okuyama

IPC分类号： H04N1/60

CPC分类号： H04N1/4078 ,  H04N1/6033 ,  H04N1/6091

摘要： An image forming apparatus includes a pattern formation unit which forms a first gradation screen pattern on an image carrier unit at a non-image formation operation, a gradation characteristic determination unit which determines a gradation characteristic from the first gradation pattern formed by the pattern formation unit, a first gradation correction characteristic determination unit which determines a first gradation correction characteristic from the gradation characteristic determined by the gradation characteristic determination unit, a characteristic detection unit which detects a change characteristic in the image forming apparatus just before image formation, a pattern correlation characteristic correction unit which determines a pattern correlation characteristic corresponding to the change characteristic detected by the characteristic detection unit and a second gradation correction characteristic determination unit which determines a second gradation correction characteristic by performing an arithmetic operation on the first gradation correction characteristic and the pattern correlation characteristic.

摘要翻译： 图像形成装置包括在非图像形成操作下在图像载体单元上形成第一灰度级屏幕图案的图案形成单元，灰度特性确定单元，其从由图案形成单元形成的第一灰度图案确定灰度特性 第一灰度校正特性确定单元，其根据由灰度特性确定单元确定的灰度特性确定第一灰度校正特性;特征检测单元，其检测在图像形成之前的图像形成装置中的变化特性，图案相关特性 确定对应于由特征检测单元检测到的变化特征的图案相关特性的校正单元和确定第二灰度校正特性的第二灰度校正特性确定单元 对第一灰度校正特性和图案相关特性进行算术运算。

公开(公告)号：US20080048195A1

公开(公告)日：2008-02-28

申请号：US11813736

申请日：2005-12-26

申请人： Hiroyuki Okuyama ,  Goshi Biwa

发明人： Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/14 ,  H01L33/16

摘要： A GaN-based semiconductor light-emitting element capable of suppressing the occurrence of piezoelectric spontaneous polarization in the thickness direction of an active layer and reducing the driving voltage of a light-emitting diode is provided. The GaN-based semiconductor light-emitting element has a structure with a first GaN-based compound semiconductor layer 21 having the top face parallel to the a-plane and having a first conductivity type, an active layer 22 having the top face parallel to the a-plane, a second GaN-based compound semiconductor layer 23 having the top face parallel to the a-plane and having a second conductivity type, and a contact layer 24 composed of a GaN-based compound semiconductor and having the top face parallel to the a-plane, stacked in that order. The GaN-based semiconductor light-emitting element further includes a first electrode 25 disposed on the first GaN-based compound semiconductor layer 21 and a second electrode 26 disposed on the contact layer 24.

摘要翻译： 提供了能够抑制有源层的厚度方向上的压电自发极化的发生并且降低发光二极管的驱动电压的GaN基半导体发光元件。 GaN基半导体发光元件具有第一GaN基化合物半导体层21的结构，该第一GaN基化合物半导体层21的顶面平行于a面并具有第一导电类型，有源层22的顶面平行于 a面，具有与a面平行并具有第二导电类型的第二GaN基化合物半导体层23和由GaN基化合物半导体构成的接触层24，并且其顶面平行于 a平面，按顺序堆叠。 GaN基半导体发光元件还包括设置在第一GaN基化合物半导体层21上的第一电极25和设置在接触层24上的第二电极26。

公开(公告)号：US07324230B2

公开(公告)日：2008-01-29

申请号：US10309149

申请日：2002-12-04

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G06F15/00 ,  G06K1/00

CPC分类号： H04N1/46

摘要： An image forming apparatus includes a storage section which stores image data for each page, an identification information generating section which generates identification information for identifying the type of the image data for each page, an engine image processor section has a plurality of processor sections for processing the image data to form an image, and a selector section which selects and outputs image data corresponding to the identification information, out of the image data processed by means of the processor section. The apparatus further includes an engine section which forms the image in accordance with the outputted image data.

摘要翻译： 图像形成装置包括：存储部，存储各页的图像数据;识别信息生成部，生成用于识别各页的图像数据的种类的识别信息;发动机图像处理部，具有多个处理部， 图像数据以形成图像，以及选择器部分，其从通过处理器部分处理的图像数据中选择并输出与识别信息相对应的图像数据。 该装置还包括根据输出的图像数据形成图像的引擎部分。

公开(公告)号：US20070077674A1

公开(公告)日：2007-04-05

申请号：US11558115

申请日：2006-11-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： A process for producing a semiconductor light-emitting device is provided. The process includes providing a substrate including a substrate surface oriented along a substrate surface plane, forming a crystal seed layer on the substrate surface, forming a masking layer on the crystal seed layer, wherein the masking layer includes an opening, forming a crystal layer by selective growth of the crystal seed layer through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane that diagonally intersects the substrate surface, and forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface.

摘要翻译： 提供一种制造半导体发光器件的方法。 该方法包括提供基板，其包括沿着基板表面平面取向的基板表面，在基板表面上形成晶种层，在晶种层上形成掩模层，其中掩模层包括开口，通过 通过所述掩模层的开口选择性地生长所述晶种层，其中所述晶体层包括沿着与所述衬底表面对角地相交的晶体层平面取向的晶体层表面，并且形成第一导电层，有源层， 以及沿着所述晶体层表面的至少一部分的第二导电层。

公开(公告)号：US20060170001A1

公开(公告)日：2006-08-03

申请号：US11331290

申请日：2006-01-12

申请人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

发明人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/40

摘要： A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

摘要翻译： 提供了一种半导体发光器件。 在包括Ag电极的InGaN系半导体发光器件中，至少Ag电极的接触侧的半导体层是位错密度选择为小于1×10 7（1 / cm 2），从而可以避免沿着该位错产生的Ag迁移引起的短路。 因此，该半导体发光器件能够解决寿命缩短的问题，并且能够解决InGaN系半导体发光元件遇到的缺陷器件的分数的问题。

公开(公告)号：US07033436B2

公开(公告)日：2006-04-25

申请号：US10121257

申请日：2002-04-11

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： C30B25/16

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

摘要： Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

公开(公告)号：US20050167678A1

公开(公告)日：2005-08-04

申请号：US11098302

申请日：2005-03-31

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/15

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US20050161681A1

公开(公告)日：2005-07-28

申请号：US11076846

申请日：2005-03-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： G09F9/33 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S5/40 ,  H01L29/06

CPC分类号： H01L33/24 ,  H01J63/04 ,  H01J63/06 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341

摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括基体，具有条形开口部分的选择掩模，形成在基体上的选择掩模，通过从开口部分选择性地生长形成的半导体层， 大致平行于开口部分的长边的脊线，以及形成在半导体层上的第一导电型包覆层，有源层和第二导电型包覆层。