摘要:
A photosensitive resin composition in accordance with the present invention has (a) a polymer having repetition units expressed by a general formula (1): wherein R1, R3, and R5 each represents a hydrogen atom or a methyl group, R2 represents a bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 22 inclusive, R4 represents a hydrocarbon group including an epoxy group, x+y+z=1, wherein 0
摘要翻译:本发明的感光性树脂组合物具有(a)具有由通式(1)表示的重复单元的聚合物:其中R1,R3和R5各自表示氢原子或甲基,R2表示桥连环状 碳数为7〜22的烃基,R4表示包含环氧基的烃基,x + y + z = 1,其中0
摘要:
A negative type photoresist composition includes a polymer which contains a repetition unit which is expressed by a general chemical formula (1) and has a weight average molecule weight in a range of 1000 to 500000, a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The general chemical formula (1) is as follows, ##STR1## where in the general chemical formula (1), R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group. Also, the general chemical formula (2) is as follows, ##STR2## In the general chemical formula (2), X is a group expressed by a general chemical formula (3), a hydrogen atom, a hydrocarbon group containing carbon atoms in a range of 1 to 6, an alkoxy group containing carbon atoms in a range of 1 to 3, or a hydroxyl group, a1, a2 and a3 are 1 or 2, respectively, b1, b2 and b3 are 0 or 1, respectively, and a1+b1=2, a2+b2=2, and a3+b3=2, and R.sup.8 is a hydrogen atom, or an alkyl group containing carbon atoms in a range of 1 to 6. ##STR3##
摘要:
A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): ##STR1## wherein R.sup.1, R.sup.3, and R.sup.5 are hydrogen atoms or methyl groups; R.sup.2 is a specified divalent hydrocarbon group; R.sup.4 is a hydrocarbon group having an epoxy group; R.sup.6 is a hydrogen atom or a C.sub.1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.
摘要:
A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## Wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.
摘要:
A conveying device for conveying long articles within heat treatment furnaces, the driving means of which includes a drive mechanism and at least one element of linear form, for conveyance of the articles, driven by means of the drive mechanism. Product carriers are conveyed by means of the linear conveying element, each product carrier having a plurality of product supports for supporting the long articles thereon. The foremost one of the carriers, with respect to the direction of motion, has a means of engaging the linear conveying element whereby the linear conveying element transports the product carriers, and thereby the product supports and the long articles disposed thereon.
摘要:
A photosensitive insulating resin composition, comprising a polymer, a photosensitizer, and an amide derivative that is expressed by the following general formula (1); (in formula (1), R1 represents a bivalent alkyl group, R2 represents a hydrocarbon group with a carbon number of 1 to 10, and R3 represents a hydrogen atom or an alkyl group with a carbon number of 1 to 4.)
摘要:
This invention relates to a negative photosensitive insulating resin composition characterized in that the composition comprises an alkali-soluble polymer having at least one repeating constitutional unit represented by the following general formula (1), a cross-linker and a photo-acid generator. The negative photosensitive insulating resin composition provides a film having excellent properties such as heat resistance, mechanical properties and electric properties, and can be alkali-developed to achieve high resolution. (In the formula, R1 represents a hydrogen atom or a methyl group, and R2 to R5 represent, independently each other, a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms.)
摘要:
The present invention relates to a novel (meth)acrylamide compound represented by the general formula (1), a (co)polymer of the (meth)acrylamide compound, and a chemically amplified photosensitive resin composition composed of the polymer and a photoacid generator. In the formula, R1 represents a hydrogen atom or a methyl group; R2 represents an acid-decomposable group; and R3 to R6 independently represent a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms.
摘要翻译:本发明涉及由通式(1)表示的新型(甲基)丙烯酰胺化合物,(甲基)丙烯酰胺化合物的(共)聚合物和由聚合物和光酸产生剂组成的化学增幅感光性树脂组合物。 在该式中,R 1表示氢原子或甲基; R2代表酸可分解基团; R 3〜R 6独立地表示氢原子,卤素原子或碳原子数1〜4的烷基。
摘要:
A noble alicyclic unsaturated compound represented by the general formula (1): wherein at least one of R1 and R2 is a fluorine atom or a fluorinated alkyl group; a polymer formed by the polymerization of a polymer precursor comprising the alicyclic compound. The polymer is useful, in the lithography using a light having a wavelength of 190 nm or less, as a chemically amplified resist which exhibits excellent transparency with respect to the light for use in exposure and also is excellent in the adhesion to a substrate and the resistance to dry etching.
摘要:
Provided is a single crystal with a hexagonal wurtzite structure which is useful as a substrate for various devices and has high purity and is uniform. The single crystal with a hexagonal wurtzite structures which is obtained by a crystal growth on at least an m-plane of a columnar seed crystal and represented by AX (A representing an electropositive element and X representing an electronegative element) is characterized in that a variation in the concentration of a metal other than the electropositive element A and having a concentration of 0.1 to 50 ppm is within 100%.