公开(公告)号：US20120021357A1

公开(公告)日：2012-01-26

申请号：US13146841

申请日：2010-01-29

申请人： Katsumi Maeda ,  Shintaro Yamamichi

发明人： Katsumi Maeda ,  Shintaro Yamamichi

IPC分类号： G03F7/20 ,  G03F7/028

CPC分类号： G03F7/0392 ,  C08F220/30 ,  C08F220/58 ,  G03F7/0045

摘要： A photosensitive insulating resin composition, comprising a polymer, a photosensitizer, and an amide derivative that is expressed by the following general formula (1); (in formula (1), R1 represents a bivalent alkyl group, R2 represents a hydrocarbon group with a carbon number of 1 to 10, and R3 represents a hydrogen atom or an alkyl group with a carbon number of 1 to 4.)

摘要翻译： 一种感光绝缘树脂组合物，其包含由以下通式（1）表示的聚合物，光敏剂和酰胺衍生物; （式（1）中，R 1表示二价烷基，R 2表示碳数为1〜10的烃基，R 3表示氢原子或碳原子数为1〜4的烷基）

公开(公告)号：US08569892B2

公开(公告)日：2013-10-29

申请号：US13062262

申请日：2009-10-05

申请人： Kentaro Mori ,  Daisuke Ohshima ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoshiki Nakashima

发明人： Kentaro Mori ,  Daisuke Ohshima ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoshiki Nakashima

IPC分类号： H01L23/48 ,  H01L23/10

CPC分类号： H01L24/85 ,  H01L23/13 ,  H01L23/142 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/2402 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/85 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.

摘要翻译： 半导体器件包括：至少一个具有电极端子的半导体元件; 支撑半导体元件的金属板; 以及覆盖半导体元件并且在表面上交替堆叠的多个绝缘层和布线层以及外部连接端子的布线板，布线层通过通孔彼此电连接。 电极端子和外部连接端子经由布线层和通孔中的至少一个电连接。 至少一个电极端子，即布线层和通孔，电连接到金属板。

公开(公告)号：US20090283895A1

公开(公告)日：2009-11-19

申请号：US12446899

申请日：2007-10-09

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Takuo Funaya ,  Kentaro Mori ,  Takehiko Maeda ,  Masaya Kawano ,  Yuuji Kayashima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Takuo Funaya ,  Kentaro Mori ,  Takehiko Maeda ,  Masaya Kawano ,  Yuuji Kayashima

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L23/5389 ,  H01L24/19 ,  H01L2223/54486 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/83 ,  H01L2224/82

摘要： A semiconductor device including a metal frame having a penetrating opening; a semiconductor chip provided in the opening; an insulating layer provided on the upper surface of the metal frame such that the insulating layer covers the upper surface, which is the circuit-formed surface of the semiconductor chip; an interconnect layer provided only on the upper-surface side of the metal frame with intervention of the insulating material and electrically connected to a circuit of the semiconductor chip; a via conductor provided on the upper surface of said semiconductor chip to electrically connect the circuit of the semiconductor chip and the interconnect layer; and a resin layer provided on the lower surface of the metal frame.

摘要翻译： 一种半导体器件，包括具有穿透开口的金属框架; 设置在开口内的半导体芯片; 绝缘层，设置在金属框架的上表面上，使得绝缘层覆盖作为半导体芯片的电路形成表面的上表面; 互连层，其仅在金属框架的上表面侧设置，并且绝缘材料的介入并且电连接到半导体芯片的电路; 设置在所述半导体芯片的上表面上的通孔导体，以电连接半导体芯片的电路和互连层; 以及设置在金属框架的下表面上的树脂层。

公开(公告)号：US08536691B2

公开(公告)日：2013-09-17

申请号：US12446899

申请日：2007-10-09

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Takuo Funaya ,  Kentaro Mori ,  Takehiko Maeda ,  Masaya Kawano ,  Yuuji Kayashima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Takuo Funaya ,  Kentaro Mori ,  Takehiko Maeda ,  Masaya Kawano ,  Yuuji Kayashima

IPC分类号： H01L23/02

CPC分类号： H01L23/5389 ,  H01L24/19 ,  H01L2223/54486 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/83 ,  H01L2224/82

摘要： A semiconductor device including a metal frame having a penetrating opening; a semiconductor chip provided in the opening; an insulating layer provided on the upper surface of the metal frame such that the insulating layer covers the upper surface, which is the circuit-formed surface of the semiconductor chip; an interconnect layer provided only on the upper-surface side of the metal frame with intervention of the insulating material and electrically connected to a circuit of the semiconductor chip; a via conductor provided on the upper surface of said semiconductor chip to electrically connect the circuit of the semiconductor chip and the interconnect layer; and a resin layer provided on the lower surface of the metal frame.

摘要翻译： 一种半导体器件，包括具有穿透开口的金属框架; 设置在开口内的半导体芯片; 绝缘层，设置在金属框架的上表面上，使得绝缘层覆盖作为半导体芯片的电路形成表面的上表面; 互连层，其仅在金属框架的上表面侧设置，并且绝缘材料的介入并且电连接到半导体芯片的电路; 设置在所述半导体芯片的上表面上的通孔导体，以电连接半导体芯片的电路和互连层; 以及设置在金属框架的下表面上的树脂层。

公开(公告)号：US20110175213A1

公开(公告)日：2011-07-21

申请号：US13062262

申请日：2009-10-05

申请人： Kentaro Mori ,  Daisuke Ohshima ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoshiki Nakashima

发明人： Kentaro Mori ,  Daisuke Ohshima ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoshiki Nakashima

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L24/85 ,  H01L23/13 ,  H01L23/142 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/2402 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/85 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.

摘要翻译： 半导体器件包括：至少一个具有电极端子的半导体元件; 支撑半导体元件的金属板; 以及覆盖半导体元件并且在表面上交替堆叠的多个绝缘层和布线层以及外部连接端子的布线板，布线层通过通孔彼此电连接。 电极端子和外部连接端子经由布线层和通孔中的至少一个电连接。 至少一个电极端子，即布线层和通孔，电连接到金属板。

公开(公告)号：US20090001604A1

公开(公告)日：2009-01-01

申请号：US11817669

申请日：2006-03-01

申请人： Daisuke Tanaka ,  Shintaro Yamamichi ,  Hideya Murai ,  Tadanori Shimoto ,  Kaichirou Nakano ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoichiro Kurita ,  Kouji Soejima

发明人： Daisuke Tanaka ,  Shintaro Yamamichi ,  Hideya Murai ,  Tadanori Shimoto ,  Kaichirou Nakano ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoichiro Kurita ,  Kouji Soejima

IPC分类号： H01L23/485 ,  H01L21/56

CPC分类号： H01L21/563 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/16 ,  H01L2221/68345 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/00

摘要： An oxide layer and a metal layer composed of a gold- or platinum-group metal are formed in the stated order on a substrate. A wiring body having a wiring layer, insulating layer, via, and electrode is formed on the metal layer. A semiconductor element is then connected as a flip chip via solder balls on the wiring body electrode, and underfill is introduced between the semiconductor element and the wiring body. Subsequently, a sealing resin layer is formed so as to cover the semiconductor element and the surface of the wiring body on which the semiconductor element is mounted, thus producing a semiconductor package. A high-density, detailed, thin semiconductor package can thereby be realized.

摘要翻译： 在基板上按规定的顺序形成由金或铂族金属构成的氧化物层和金属层。 具有布线层，绝缘层，通孔和电极的布线体形成在金属层上。 然后，半导体元件作为倒装芯片通过布线体电极上的焊球连接，底部填充物被引入到半导体元件与布线体之间。 随后，形成密封树脂层，以覆盖半导体元件和安装有半导体元件的布线体的表面，从而制造半导体封装。 由此可以实现高密度，详细，薄的半导体封装。

公开(公告)号：US20130167932A1

公开(公告)日：2013-07-04

申请号：US13822577

申请日：2011-11-07

申请人： Katsumi Maeda ,  Shin Nakamura ,  Kentaro Nakahara ,  Terumasa Shimoyama

发明人： Katsumi Maeda ,  Shin Nakamura ,  Kentaro Nakahara ,  Terumasa Shimoyama

IPC分类号： C09B57/00 ,  H01G9/20

CPC分类号： C09B57/00 ,  C07D409/04 ,  C07D409/14 ,  C07D495/04 ,  C09B23/105 ,  H01G9/2059 ,  H01L51/0064 ,  H01M14/005 ,  Y02E10/542

摘要： Provided is an indole compound represented by the following general formula (1): wherein in formula (1), R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group; R3 to R6 each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, an alkoxy group or a hydroxy group; X represents an organic group having an acidic group; and Z represents a linking group including at least one selected from the group consisting of a substituted or unsubstituted aromatic ring, a substituted or unsubstituted heterocyclic ring, a vinylene group and an ethynylene group.

摘要翻译： 提供由以下通式（1）表示的吲哚化合物：其中在式（1）中，R 1和R 2各自独立地表示氢原子，取代或未取代的烷基，取代或未取代的芳基或取代或未取代的 杂环基; R 3〜R 6各自独立地表示氢原子，取代或未取代的烷基，取代或未取代的芳基，烷氧基或羟基。 X表示具有酸性基团的有机基团; Z表示包括选自取代或未取代的芳环，取代或未取代的杂环，亚乙烯基和亚乙炔基中的至少一种的连接基团。

公开(公告)号：US20130008510A1

公开(公告)日：2013-01-10

申请号：US13636609

申请日：2011-03-22

申请人： Shin Nakamura ,  Katsumi Maeda ,  Kentaro Nakahara ,  Masahiro Suguro

发明人： Shin Nakamura ,  Katsumi Maeda ,  Kentaro Nakahara ,  Masahiro Suguro

IPC分类号： H01L51/44 ,  H01L51/46

CPC分类号： H01G9/2004 ,  H01G9/2018 ,  H01G9/2031 ,  H01G9/2059 ,  Y02E10/542

摘要： An object of the present invention is to provide a photoelectric conversion element having excellent photoelectric conversion efficiency and durability. To achieve the object, the present invention provides a photoelectric conversion element including a semiconductor electrode (70) that has a porous semiconductor layer (30) onto which a dye (40) is adsorbed, a counter electrode (60) that is provided so as to face the semiconductor layer (30) of the semiconductor electrode (70), and an electrolyte (50) that contains a radical compound having an average molecular weight of 200 or more and is positioned between the semiconductor electrode (70) and the counter electrode (60).

摘要翻译： 本发明的目的是提供一种具有优异的光电转换效率和耐久性的光电转换元件。 为了实现该目的，本发明提供了一种光电转换元件，其包括：半导体电极（70），其具有吸附有染料（40）的多孔半导体层（30）;反电极（60），其设置为 面向半导体电极（70）的半导体层（30），以及含有平均分子量为200以上且位于半导体电极（70）和对置电极之间的自由基化合物的电解质（50） （60）。

公开(公告)号：US20060124051A1

公开(公告)日：2006-06-15

申请号：US11239214

申请日：2005-09-30

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/10 ,  C30B7/00 ,  C30B29/16

摘要： An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide single crystal whose concentration of metals other than zinc in the crystal fulfills the following equation: [−cM]/[+cM]≧3wherein M is a metal other than zinc, [−cM] is a concentration of M in a −c region in the zinc oxide crystal, and [+cM] is a concentration of M in a +c region in the zinc oxide crystal.

摘要翻译： 本发明的目的是提供一种其导电性优异且质量高的氧化锌（ZnO）单晶。 本发明涉及一种氧化锌单晶，其晶体中锌以外的金属的浓度满足以下等式：<？在线公式描述=“在线公式”end =“lead”？> [ - cM] / [+ cM]> = 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是除锌以外的金属，[-cM] -c区域，[+ cM]是氧化锌晶体中+ c区域中的M的浓度。

公开(公告)号：US06746722B2

公开(公告)日：2004-06-08

申请号：US10198958

申请日：2002-07-22

申请人： Katsumi Maeda ,  Kaichiro Nakano

发明人： Katsumi Maeda ,  Kaichiro Nakano

IPC分类号： C08J704

CPC分类号： C08F222/22 ,  C08F222/18 ,  Y10S522/914

摘要： A fluorine-containing phenylmaleimide derivative having a specific structure. A polymer obtained by polymerizing monomers containing the derivative. A polymer containing a specific structural unit and having a weight-average molecular weight of 2,000 to 200,000. A chemically amplified resist composition containing the polymer and a photo acid generator, wherein the proportion of the polymer relative to the total of the polymer and the photo acid generator is 70 to 99.8% by mass. A method for pattern formation, which comprises coating the above composition on a to-be-processed substrate, exposing with a light of 180 nm or less wavelength, and conducting baking and development.

摘要翻译： 具有特定结构的含氟苯基马来酰亚胺衍生物。 通过聚合含有该衍生物的单体获得的聚合物。 含有特定结构单元且重均分子量为2,000〜200,000的聚合物。 一种含有聚合物和光酸发生剂的化学放大抗蚀剂组合物，其中聚合物相对于聚合物和光酸产生剂的总量的比例为70〜99.8质量％。 一种图案形成方法，其包括将上述组合物涂布在待处理衬底上，用180nm或更小波长的光进行曝光，并进行烘烤和显影。