公开(公告)号：US08484491B2

公开(公告)日：2013-07-09

申请号：US12805097

申请日：2010-07-12

申请人： Hironobu Kageyama ,  Takashi Sato ,  Yuki Chiba ,  Koki Watanabe

发明人： Hironobu Kageyama ,  Takashi Sato ,  Yuki Chiba ,  Koki Watanabe

IPC分类号： G06F1/26

CPC分类号： H02J9/061 ,  H02J9/005

摘要： A main power supply and a backup power supply have the same set voltage. To prevent electrical power from being supplied from the backup power supply to a load circuit, during a normal operation, a power supply control unit gives a standby instruction to the backup power supply so that the backup power supply is on standby at a voltage lower than that of the main power supply. When an AC power supply is stopped, the backup power supply is operated at the set voltage and the main power supply is stopped.

摘要翻译： 主电源和备用电源具有相同的设定电压。 为了防止从备用电源向负载电路供电，在正常操作期间，电源控制单元向备用电源发出备用指令，使得备用电源处于低于 主电源。 当交流电源停止时，备用电源以设定电压运行，主电源停止。

公开(公告)号：US07723238B2

公开(公告)日：2010-05-25

申请号：US11153539

申请日：2005-06-16

申请人： Yuki Chiba

发明人： Yuki Chiba

IPC分类号： H01L21/302

CPC分类号： H01L21/31138 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31144

摘要： In a method for manufacturing a semiconductor device, a first high frequency power of a first frequency is applied to a processing gas to generate a plasma of the processing gas, a second high frequency power of a second frequency smaller than the first frequency is applied to a substrate to be processed. Further, a to-be-etched layer disposed under a resist film having a pattern of openings is etched by using the resist film as a mask, the to-be-etched layer being disposed on a surface of the substrate. In addition, dimensions of openings formed in the to-be-etched layer are controlled by varying an applied power of the first high frequency.

摘要翻译： 在制造半导体器件的方法中，将第一频率的第一高频功率施加到处理气体以产生处理气体的等离子体，将小于第一频率的第二频率的第二高频功率施加到 待加工的基材。 此外，通过使用抗蚀剂膜作为掩模蚀刻设置在具有开口图案的抗蚀剂膜下方的被蚀刻层，被蚀刻层设置在基板的表面上。 此外，通过改变第一高频的施加功率来控制在待蚀刻层中形成的开口的尺寸。

公开(公告)号：US09606138B2

公开(公告)日：2017-03-28

申请号：US14377217

申请日：2013-01-21

申请人： Yuki Chiba ,  Yoji Miyazaki

发明人： Yuki Chiba ,  Yoji Miyazaki

IPC分类号： G06F15/18 ,  G01P13/00 ,  A61B5/11 ,  G06N99/00 ,  A61B5/00

CPC分类号： G01P13/00 ,  A61B5/0022 ,  A61B5/1116 ,  A61B5/1117 ,  A61B5/1118 ,  A61B5/1123 ,  A61B5/6898 ,  A61B5/7264 ,  A61B5/7282 ,  A61B2562/0219 ,  G06N99/005

摘要： Provided are a motion recognition apparatus, a motion recognition system and a motion recognition method that enable ‘event motions’ to be recognized with a small number of calculations. The motion recognition system, which recognizes user motions by using sensor data, is configured to be provided with: a cyclical loss detection means for detecting cyclical losses of sensor data when a user is moving; and a recognition processing means for setting data intervals to be used for recognizing motions in accordance with the cyclical losses of sensor data that were detected, and for recognizing user motions on the basis of sensor data for the data intervals that have been set.

公开(公告)号：US08859430B2

公开(公告)日：2014-10-14

申请号：US13530546

申请日：2012-06-22

申请人： Yuki Chiba

发明人： Yuki Chiba

IPC分类号： H01L21/311

CPC分类号： H01L21/02118 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method for protecting an exposed low-k surface is described. The method includes providing a substrate having a low-k insulation layer formed thereon and one or more mask layers overlying the low-k insulation layer with a pattern formed therein. Additionally, the method includes transferring the pattern in the one or more mask layers to the low-k insulation layer using one or more etching processes to form a trench and/or via structure in the low-k insulation layer. The method further includes forming an insulation protection layer on exposed surfaces of the trench and/or via structure during and/or following the one or more etching processes by exposing the substrate to a film forming compound containing C, H, and N. Thereafter, the method includes removing at least a portion of the one or more mask layers using a mask removal process.

摘要翻译： 描述了一种用于保护暴露的低k表面的方法。 该方法包括提供其上形成有低k绝缘层的衬底和覆盖低k绝缘层的一个或多个掩模层，其中形成有图案。 此外，该方法包括使用一个或多个蚀刻工艺将一个或多个掩模层中的图案转移到低k绝缘层，以在低k绝缘层中形成沟槽和/或通孔结构。 该方法还包括在将一个或多个蚀刻工艺期间和/或之后的沟槽和/或通孔结构的暴露表面上形成绝缘保护层，通过将衬底暴露于含有C，H和N的成膜化合物。此后， 该方法包括使用掩模移除过程去除一个或多个掩模层的至少一部分。

公开(公告)号：US20140195300A1

公开(公告)日：2014-07-10

申请号：US14238882

申请日：2012-07-23

申请人： Yuki Chiba ,  Yoji Miyazaki

发明人： Yuki Chiba ,  Yoji Miyazaki

IPC分类号： G06Q30/02

CPC分类号： G06Q30/0201 ,  G01C21/3682 ,  H04W4/021

摘要： A site of interest extraction apparatus (10) includes: a passage section identification unit (4) that, for each user (20), renders a virtual line on a map using position information and direction information based on map information and on grid information identifying a plurality of sections, and identifies sections through which the virtual line passes, the position information and direction information being acquired for each user from a terminal device (21) owned by the user, and the virtual line being defined by the position information and direction information; an interest degree calculation unit (5) that, for each identified section, calculates an interest degree by adding a score in accordance with the virtual lines passing through the section; and a site of interest extraction unit (6) that selects one section based on the interest degrees and extracts the selected section as a site of interest to a plurality of users (20).

摘要翻译： 感兴趣场所提取装置（10）包括：通过部分识别单元（4），对于每个用户（20），使用基于地图信息的位置信息和方向信息以及网格信息识别在地图上呈现虚拟线 多个部分，并且从用户所拥有的终端设备（21）识别虚拟线路通过的部分，为每个用户获取的位置信息和方向信息，虚拟线路由位置信息和方向 信息; 感兴趣度计算单元（5），对于每个所识别的部分，通过根据穿过该部分的虚拟线添加分数来计算兴趣度; 和感兴趣提取单元（6），其基于所述兴趣度选择一个部分，并将所选择的部分提取为多个用户的关注点（20）。

公开(公告)号：US20100248473A1

公开(公告)日：2010-09-30

申请号：US12414917

申请日：2009-03-31

申请人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Satohiko Hoshino ,  Hiroyuki Nagai ,  Yuki Chiba ,  Frank M. Cerio, JR.

发明人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Satohiko Hoshino ,  Hiroyuki Nagai ,  Yuki Chiba ,  Frank M. Cerio, JR.

IPC分类号： H01L21/768 ,  H01L21/3205

CPC分类号： H01L21/76849 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76883

摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.

摘要翻译： 一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。 在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团 具有疏水官能团。 该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

公开(公告)号：US20090029558A1

公开(公告)日：2009-01-29

申请号：US12216155

申请日：2008-06-30

申请人： Yuki Chiba

发明人： Yuki Chiba

IPC分类号： G06F19/00 ,  H01L21/302

CPC分类号： H01L21/31138 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76814 ,  H01L21/76826

摘要： The present invention relates to a method of manufacturing a semiconductor device using a substrate including an organic low dielectric constant film containing a silicon, a carbon, an oxygen, and a hydrogen, with a resist pattern being formed on an upper layer side of the low dielectric constant film. The method comprising: an etching step in which the low dielectric constant film is etched by a plasma; an ashing step following to the etching step, in which the resist pattern is ashed by a plasma that is rich in oxygen radicals in such a manner that a relative dielectric constant of the low dielectric constant film can become 5.2 or more; and a recovering step following to the ashing step, in which an organic gas is supplied to the low dielectric constant film so as to recovery a damage of the low dielectric constant film caused by the plasma.

摘要翻译： 本发明涉及一种使用包含含有硅，碳，氧和氢的有机低介电常数膜的基板的半导体器件的制造方法，其中抗蚀剂图案形成在低层的上层侧 介电常数膜。 该方法包括：蚀刻步骤，其中通过等离子体蚀刻低介电常数膜; 在蚀刻步骤之后的灰化步骤，其中抗蚀剂图案以能够使低介电常数膜的相对介电常数达到5.2以上的方式被富含氧自由基的等离子体灰化; 以及在灰化步骤之后的恢复步骤，其中向低介电常数膜提供有机气体，以便恢复由等离子体引起的低介电常数膜的损坏。

公开(公告)号：US09298739B2

公开(公告)日：2016-03-29

申请号：US13988460

申请日：2011-11-23

申请人： Yoji Miyazaki ,  Yuki Chiba

发明人： Yoji Miyazaki ,  Yuki Chiba

IPC分类号： G01C21/10 ,  G06F17/30 ,  G01C21/20

CPC分类号： G06F17/30241 ,  G01C21/20

摘要： A position information providing apparatus includes a sensor data acquiring unit acquiring sensor data, a feature amount calculating unit calculating a feature amount from the sensor data, and a confidence level calculating unit calculating a confidence level using the feature amount, wherein the sensor data is more than one, and the feature amount includes a statistical amount of more than one piece of the sensor data and an amount showing a form of the sensor data.

摘要翻译： 位置信息提供装置包括：传感器数据获取单元，用于获取传感器数据，特征量计算单元，根据传感器数据计算特征量;以及置信度计算单元，使用特征量计算置信度，其中，传感器数据更多 特征量包括多于一个传感器数据的统计量和表示传感器数据形式的量。

公开(公告)号：US20130344699A1

公开(公告)日：2013-12-26

申请号：US13530546

申请日：2012-06-22

申请人： Yuki Chiba

发明人： Yuki Chiba

IPC分类号： H01L21/306

CPC分类号： H01L21/02118 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method for protecting an exposed low-k surface is described. The method includes providing a substrate having a low-k insulation layer formed thereon and one or more mask layers overlying the low-k insulation layer with a pattern formed therein. Additionally, the method includes transferring the pattern in the one or more mask layers to the low-k insulation layer using one or more etching processes to form a trench and/or via structure in the low-k insulation layer. The method further includes forming an insulation protection layer on exposed surfaces of the trench and/or via structure during and/or following the one or more etching processes by exposing the substrate to a film forming compound containing C, H, and N. Thereafter, the method includes removing at least a portion of the one or more mask layers using a mask removal process.

摘要翻译： 描述了一种用于保护暴露的低k表面的方法。 该方法包括提供其上形成有低k绝缘层的衬底和覆盖低k绝缘层的一个或多个掩模层，其中形成有图案。 此外，该方法包括使用一个或多个蚀刻工艺将一个或多个掩模层中的图案转移到低k绝缘层，以在低k绝缘层中形成沟槽和/或通孔结构。 该方法还包括在将一个或多个蚀刻工艺期间和/或之后的沟槽和/或通孔结构的暴露表面上形成绝缘保护层，通过将衬底暴露于含有C，H和N的成膜化合物。此后， 该方法包括使用掩模移除过程去除一个或多个掩模层的至少一部分。

公开(公告)号：US20130304736A1

公开(公告)日：2013-11-14

申请号：US13988460

申请日：2011-11-23

申请人： Yoji Miyazaki ,  Yuki Chiba

发明人： Yoji Miyazaki ,  Yuki Chiba

IPC分类号： G06F17/30

CPC分类号： G06F17/30241 ,  G01C21/20

摘要： The present invention is to provide a position information providing apparatus that allows the calculation of the confidence level of the measurement result with high accuracy.A position information providing apparatus includes a sensor data acquiring unit 110 acquiring sensor data, a feature amount calculating unit 120 calculating a feature amount from the sensor data, and a confidence level calculating unit 130 calculating a confidence level using the feature amount, wherein the sensor data is more than one, and the feature amount includes a statistical amount of more than one piece of the sensor data and an amount showing a form of the sensor data.

摘要翻译： 本发明提供一种允许以高精度计算测量结果的置信水平的位置信息提供装置。 位置信息提供装置包括传感器数据获取单元110获取传感器数据，特征量计算单元120从传感器数据计算特征量，以及置信度计算单元130使用特征量来计算置信度，其中传感器 数据多于一个，特征量包括多于一个传感器数据的统计量和显示传感器数据形式的量。