公开(公告)号：USD567693S1

公开(公告)日：2008-04-29

申请号：US29286358

申请日：2007-05-02

申请人： Kyoji Ichimura ,  Atsushi Endo ,  Kazuharu Seki

设计人： Kyoji Ichimura ,  Atsushi Endo ,  Kazuharu Seki

公开(公告)号：US07156923B2

公开(公告)日：2007-01-02

申请号：US10986282

申请日：2004-11-12

申请人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

发明人： Hitoshi Kato ,  Kohei Fukushima ,  Atsushi Endo ,  Tatsuo Nishita ,  Takeshi Kumagai

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/52 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02271 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/0217 ,  H01L21/3185 ,  Y10S438/905

摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

摘要翻译： 热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。 反应容器2在500-900℃范围内的温度下被加热，排气管（16）在分解和清洁排气管16之前被加热到100℃。 氨通过工艺气体供给管（13）供给到反应容器（2）中，氨从反应容器（2）排出到排气管（16）中。

公开(公告)号：US06829918B2

公开(公告)日：2004-12-14

申请号：US10219662

申请日：2002-08-16

申请人： Koji Tanida ,  Atsushi Endo ,  Munehiro Hoshino

发明人： Koji Tanida ,  Atsushi Endo ,  Munehiro Hoshino

IPC分类号： G01N3002

CPC分类号： G01N33/2835 ,  G01N33/0045

摘要： A method of and an apparatus for measuring mercury present in a hydrocarbon, wherein a gas (G) such as an air containing no mercury is allowed to flow through a column filled with an adsorbent material effective to adsorb mercury, and a hydrocarbon sample to be measured is injected into the column to allow the mercury contained therein to be adsorbed by the adsorbent material while removing a volatile component other than mercury therefrom, and measuring the amount of mercury using mercury measuring instrument.

摘要翻译： 一种用于测量烃中存在的汞的方法和装置，其中允许不含汞的空气等气体（G）流过填充有吸附汞的吸附剂的柱，烃样品为 将测量的样品注入柱中以允许其中所含的汞被吸附材料吸附，同时除去除了汞之外的挥发性成分，并使用汞测量仪测量汞的量。

公开(公告)号：US5635552A

公开(公告)日：1997-06-03

申请号：US547332

申请日：1995-10-24

申请人： Atsushi Endo ,  Akimitsu Mochizuki ,  Tadashi Itabashi ,  Masami Kuwabara

发明人： Atsushi Endo ,  Akimitsu Mochizuki ,  Tadashi Itabashi ,  Masami Kuwabara

IPC分类号： C09B67/20 ,  C09D17/00 ,  C08K5/16 ,  C08K5/3467

CPC分类号： C09D17/001 ,  Y10S260/38

摘要： A method is disclosed for dispersing a pigment to obtain a pigment dispersion. The method involves dispersing 100 parts by weight of a pigment, 0.1 to 30 parts by weight of a specific pigment dispersing agent and 5 to 300 parts by weight of a water-based resin in 100 to 2,000 parts by weight of an aqueous medium having a water-soluble organic solvent concentration of 4 to 15% by weight. Pigments are obtained which are suitable for the production of water-based coating compositions or water-based inks excellent in fluidity, storage stability, gloss of a coating, sharpness and tinting strength.

摘要翻译： 公开了一种分散颜料以获得颜料分散体的方法。 该方法包括将100重量份的颜料，0.1至30重量份的特定颜料分散剂和5至300重量份的水基树脂分散在100至2,000重量份的具有 水溶性有机溶剂浓度为4〜15重量％。 获得了适用于生产流动性，储存稳定性，涂层光泽，清晰度和着色强度优异的水性涂料组合物或水性油墨的颜料。

公开(公告)号：US4993148A

公开(公告)日：1991-02-19

申请号：US406401

申请日：1989-09-12

申请人： Kohei Adachi ,  Mitsuyuki Takada ,  Atsushi Endo ,  Eishi Gofuku ,  Hayato Takasago

发明人： Kohei Adachi ,  Mitsuyuki Takada ,  Atsushi Endo ,  Eishi Gofuku ,  Hayato Takasago

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L23/14 ,  H01L23/373 ,  H05K1/02 ,  H05K1/05 ,  H05K1/18 ,  H05K3/10 ,  H05K3/46

CPC分类号： H01L24/32 ,  H01L23/142 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H05K1/021 ,  H01L2224/05644 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48644 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/20752 ,  H01L2924/351 ,  H05K1/0206 ,  H05K1/056 ,  H05K1/182 ,  H05K2201/0154 ,  H05K2201/09745 ,  H05K2203/049 ,  H05K3/108 ,  H05K3/4644 ,  Y10T29/4913

摘要： A method is provided for forming a circuit board which comprises a copper plate and an insulating layer of photosensitive polyimide resin formed on the copper plate, the insulating layer leaving an exposed portion of a surface of the copper plate where an LSI is to be mounted. After Au plating is applied to the exposed surface of the copper plate, the LSI is mounted fixedly. A connection pattern having bonding pads is formed by copper plating on the insulating layer. The bonding pads and the LSI are connected by Au wire bonding on the Au plating applied on the bonding pads.

摘要翻译： 提供一种用于形成电路板的方法，该电路板包括铜板和形成在铜板上的感光聚酰亚胺树脂的绝缘层，绝缘层留下铜板的要安装LSI的表面的暴露部分。 在对铜板的露出面施加Au电镀之后，LSI被固定地安装。 具有接合焊盘的连接图案通过在绝缘层上的铜电镀形成。 接合焊盘和LSI通过Au引线接合在施加在接合焊盘上的Au电镀上连接。

公开(公告)号：USD720308S1

公开(公告)日：2014-12-30

申请号：US29420536

申请日：2012-05-10

申请人： Hirofumi Kaneko ,  Atsushi Endo

设计人： Hirofumi Kaneko ,  Atsushi Endo

公开(公告)号：US20110184190A1

公开(公告)日：2011-07-28

申请号：US13014517

申请日：2011-01-26

申请人： Atsushi Endo ,  Charles E. Chase ,  Francis G. Fang

发明人： Atsushi Endo ,  Charles E. Chase ,  Francis G. Fang

IPC分类号： C07D493/04 ,  C07D407/06 ,  C07D407/14

CPC分类号： C07F7/1804 ,  C07D307/12 ,  C07D307/38 ,  C07D405/06 ,  C07D405/12 ,  C07D407/06 ,  C07D493/04 ,  Y02P20/55

摘要： In general, the invention features compounds useful for the synthesis of analogs of halichondrin B, such as eribulin or pharmaceutically acceptable salts thereof, e.g., eribulin mesylate. Exemplary compounds are of formula (I), (II), or (III):

摘要翻译： 通常，本发明的特征在于可用于合成软骨素B的类似物的化合物，例如胡椒素或其药学上可接受的盐，例如甲磺酸埃布林。 示例性化合物具有式（I），（II）或（III）：

公开(公告)号：US20080035933A1

公开(公告)日：2008-02-14

申请号：US11833586

申请日：2007-08-03

申请人： Hitoshi Nagata ,  Atsushi Endo ,  Shinsuke Yura

发明人： Hitoshi Nagata ,  Atsushi Endo ,  Shinsuke Yura

IPC分类号： H01L29/04 ,  H01L21/82

CPC分类号： H01L29/4908 ,  H01L27/1248 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： A thin film transistor array substrate includes a polysilicon layer having a predetermined pattern shape formed over a substrate, a first gate insulating film provided over the substrate and on the surface of the polysilicon layer and having a same polished surface as the surface of the polysilicon layer and a second gate insulating film formed to cover the polysilicon layer and the first gate insulating film.

摘要翻译： 薄膜晶体管阵列基板包括在基板上形成的具有预定图案形状的多晶硅层，设置在基板上并在多晶硅层的表面上并具有与多晶硅层表面相同的抛光表面的第一栅极绝缘膜 以及形成为覆盖多晶硅层和第一栅极绝缘膜的第二栅极绝缘膜。

公开(公告)号：US20080008566A1

公开(公告)日：2008-01-10

申请号：US11822282

申请日：2007-07-03

申请人： Atsushi Endo ,  Yoshiyuki Fujita ,  Shinji Miyazaki

发明人： Atsushi Endo ,  Yoshiyuki Fujita ,  Shinji Miyazaki

IPC分类号： H01L21/67 ,  F27D11/12

CPC分类号： H01L21/67248 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/67115

摘要： A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.

摘要翻译： 一种垂直加热装置，用于对多个目标基板进行热处理，所述垂直加热装置一起包括垂直处理容器，其构造成容纳所述目标基板并且在底部具有转移口; 保持器，被构造成在处理容器内沿垂直方向间隔地支撑目标基板; 以及加热器，其设置在所述处理容器的周围，并且被配置为通过所述处理容器的侧壁提供热射线，以便加热所述处理容器的内部。 加热器和处理容器的下端侧之间设置有热缓冲部件，以包围下端侧，并且构造为降低加工器和加工容器内的目标基板之间的热线的下端侧的透射率。

公开(公告)号：US20060042544A1

公开(公告)日：2006-03-02

申请号：US11209741

申请日：2005-08-24

申请人： Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

发明人： Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

IPC分类号： B08B3/12 ,  C23C16/00

CPC分类号： C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.