公开(公告)号：US20100165356A1

公开(公告)日：2010-07-01

申请号：US12720698

申请日：2010-03-10

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: G01B9/02 ,  H01S5/34

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1053 ,  H01S5/1057 ,  H01S5/124 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3412 ,  H01S5/509

Abstract: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

Abstract translation: 半导体光学元件具有包括量子点的有源层。 光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加 。

公开(公告)号：US07397833B2

公开(公告)日：2008-07-08

申请号：US11530968

申请日：2006-09-12

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00

CPC classification number: H01S5/12 ,  H01S5/1064 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/20 ,  H01S5/22

Abstract: A semiconductor laser according to the present invention comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.

Abstract translation: 根据本发明的半导体激光器包括：基板; 设置在所述基板上的n包层; 设置在n包层上的有源层; p层，设置在有源层上并形成波导脊; 以及设置在有源层和n包层或p包层之间的衍射光栅层，并且在衍射光栅层的一部分中在光波导方向上包括相移结构。 p型覆层的宽度在与衍射光栅层的相移结构对应的部分增加。

公开(公告)号：US07092145B2

公开(公告)日：2006-08-15

申请号：US10735210

申请日：2003-12-15

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: G02F1/35 ,  G02F1/365

CPC classification number: G02F2/004 ,  G02F2001/212 ,  G02F2002/006

Abstract: Input light is split by an input-light splitter into first split light and second split light. A multiplex-interference portion performs multiplex interference of the first split light and the second split light to generate intensity-modulated light having a first wavelength. A phase modulation portion is fed with the intensity-modulated light and continuous wave light having a wavelength equal to a second wavelength, and performs cross-phase modulation of the continuous wave light in accordance with phase modulation of the input light.

Abstract translation: 输入光被输入光分离器分成第一分裂光和第二分光。 复用干扰部分执行第一分裂光和第二分离光的多路复用干涉，以产生具有第一波长的强度调制光。 向相位调制部供给具有等于第二波长的波长的强度调制光和连续波光，并根据输入光的相位调制进行连续波光的交叉相位调制。

公开(公告)号：US20050163178A1

公开(公告)日：2005-07-28

申请号：US10918358

申请日：2004-08-16

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/323 ,  H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/305 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/34366 ,  H01S5/34373

Abstract: A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double heterojunction layer of p-AlGaInAs; a second first-cladding layer made up of a p-InP layer; a first light confining layer of p-InGaAsP; an active layer of InGaAsP having a quantum well structure; a second light confining layer of n-InGaAsP; and a second-cladding layer made up of an n-InP layer, and heterojunctions of the second kind are formed at the interfaces between the first first-cladding layer and the double heterojunction layer and between the double heterojunction layer and the second first-cladding layer.

Abstract translation: 根据本发明的半导体激光器件包括：光波导层叠结构，具有：由p-InP层构成的第一第一包层; p-AlGaInAs的双异质结层; 由p-InP层构成的第二第一包层; p-InGaAsP的第一光限制层; 具有量子阱结构的InGaAsP的有源层; n-InGaAsP的第二光限制层; 以及由n-InP层构成的第二包覆层，并且在第一第一包层和双异质结层之间的界面处以及在双异质结层和第二第一包层之间的界面处形成第二类型的异质结 层。

公开(公告)号：US20050075150A1

公开(公告)日：2005-04-07

申请号：US10792789

申请日：2004-03-05

Applicant: Kazuhisa Takagi ,  Yuko Furukawa ,  Yuji Koyamashita ,  Shigeru Kusunoki ,  Sohji Tsuchiya

Inventor： Kazuhisa Takagi ,  Yuko Furukawa ,  Yuji Koyamashita ,  Shigeru Kusunoki ,  Sohji Tsuchiya

IPC: H01Q1/24 ,  H01Q17/00 ,  H04B1/38 ,  H04Q7/32

CPC classification number: H04B1/3838 ,  H01Q1/245

Abstract: A dielectric sheet is attached to the inner surface of the portable telephone housing. The dielectric sheet extends in the area between the user's head and a whip antenna of the portable telephone. The real part and the imaginary part of the relative dielectric constant of the dielectric sheet is properly selected such that the dielectric sheet can reduce SAR (Specific Absorption Rate) and improve antenna efficiency.

Abstract translation: 电介质片附接到便携式电话机壳体的内表面。 电介质片在用户的头部和便携式电话的鞭状天线之间的区域中延伸。 适当地选择电介质片的相对介电常数的实部和虚部，使得电介质片可以降低SAR（比吸收率）并提高天线效率。

公开(公告)号：US06760141B2

公开(公告)日：2004-07-06

申请号：US10464450

申请日：2003-06-19

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: G02F1035

CPC classification number: B82Y20/00 ,  G02F1/01708 ,  G02F1/01716 ,  G02F2001/0157

Abstract: An electroabsorption semiconductor optical modulator includes a light absorption layer for generating a modulated light beam by absorbing an incident light beam. A well layer in the light absorption layer, accumulates charge carriers generated by the light absorption layer. The charge carriers are guided and released from the well layer upon receipt of an incident excitation light beam having a wavelength corresponding to the bandgap energy of the well layer. The incident light beam is modulated by changes in absorption coefficient in response to an externally applied voltage. The modulator responds to a high-intensity incident light beam at high frequency, free from deterioration of extinction characteristics, and has good transmission characteristics.

Abstract translation: 电吸收半导体光调制器包括用于通过吸收入射光束产生调制光束的光吸收层。 光吸收层中的阱层积聚由光吸收层产生的电荷载流子。 在接收到具有对应于阱层的带隙能量的波长的入射激发光束时，电荷载流子从阱层被引导和释放。 入射光束响应于外部施加的电压而被吸收系数的变化调制。 调制器以高频率响应高强度入射光束，没有消光特性的劣化，并具有良好的传输特性。

公开(公告)号：US06667529B2

公开(公告)日：2003-12-23

申请号：US09984825

申请日：2001-10-31

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01L2358

CPC classification number: H01S5/0265 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/2275 ,  H01L2924/00

Abstract: A semiconductor device has a first semiconductor layer, a second semiconductor layer, and an active layer sandwiched between the first and the second semiconductor layer and emits light from the active layer when a voltage is applied across the first and the second semiconductor layer. The semiconductor device includes an anode on the first semiconductor layer, an insulating film on the anode, and a screen electrode on the insulating film covering at least part of the anode. The second semiconductor layer is grounded and the screen electrode is electrically connected to the grounded second semiconductor layer. The screen electrode screens the anode to prevent flow of a leakage current between the first and second semiconductor layers due to electromagnetic waves.

Abstract translation: 半导体器件具有第一半导体层，第二半导体层和夹在第一和第二半导体层之间的有源层，并且当跨越第一和第二半导体层施加电压时，从有源层发射光。 半导体器件包括在第一半导体层上的阳极，阳极上的绝缘膜，以及覆盖阳极的至少一部分的绝缘膜上的屏蔽电极。 第二半导体层接地，屏蔽电极与接地的第二半导体层电连接。 屏幕电极屏蔽阳极以防止由于电磁波而导致第一和第二半导体层之间的漏电流的流动。

公开(公告)号：US06623670B2

公开(公告)日：2003-09-23

申请号：US09860427

申请日：2001-05-21

Applicant: Masutsugu Tasaki ,  Akira Ichikawa ,  Tsutomu Odaki ,  Kazuhisa Takagi

Inventor： Masutsugu Tasaki ,  Akira Ichikawa ,  Tsutomu Odaki ,  Kazuhisa Takagi

IPC: B29C4500

CPC classification number: H01L33/507 ,  H01L33/505

Abstract: This invention relates to a method of producing a molded transparent covering member. The steps of the method comprise providing a silicon rubber material and a fluorescent substance together to form a material to be molded in a space between an inner surface of an upper mold and an outer surface of a lower mold; sand-blasting at least one of the inner surface of said upper mold and the outer surface of the lower mold; and injecting the material into the space formed between upper mold and the lower mold.

Abstract translation: 本发明涉及一种制造模制的透明覆盖件的方法。 该方法的步骤包括将硅橡胶材料和荧光物质一起提供在上模的内表面和下模的外表面之间的空间中形成待模制的材料; 对所述上模的内表面和下模的外表面中的至少一个进行喷砂; 并将材料注入到形成在上模和下模之间的空间中。

公开(公告)号：US06521915B2

公开(公告)日：2003-02-18

申请号：US09805461

申请日：2001-03-14

Applicant: Tsutomu Odaki ,  Masutsugu Tasaki ,  Akira Ichikawa ,  Kazuhisa Takagi ,  Kazuaki Hashimoto

Inventor： Tsutomu Odaki ,  Masutsugu Tasaki ,  Akira Ichikawa ,  Kazuhisa Takagi ,  Kazuaki Hashimoto

IPC: H01L3300

CPC classification number: C09K11/7774 ,  C09K11/7731 ,  C09K11/7794 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: An LED device is provided that has an excellent color rendering property and no toxicity and does not increase production costs more than necessary. A covering member is also provided used for such a device. The LED device comprises a light-emitting element for emitting light in a blue to green region and a fluorescent substance containing a red phosphor for converting the wavelength of the light emitted from the light-emitting element to another wavelength. The red phosphor is CaS activated by Eu or a phosphor expressed by the general formula AEu(1−x)LnxB2O8, wherein A is an element selected from the group consisting of Li, K, Na and Ag; Ln is an element selected from the group consisting of Y, La and Gd; and B is W or Mo; and x is number equal to or larger than 0, but smaller than 1.

Abstract translation: 提供具有优异的显色性且无毒性的LED装置，不会增加生产成本。 还提供了用于这种装置的覆盖构件。 LED装置包括用于发射蓝色至绿色区域的光的发光元件和包含用于将从发光元件发射的光的波长转换为另一波长的红色荧光体的荧光物质。 红色荧光体是由Eu活化的CaS或由通式AEu（1-x）LnxB2O8表示的荧光体，其中A是选自Li，K，Na和Ag的元素; Ln是选自Y，La和Gd的元素; B为W或Mo; x等于或大于0，但小于1。

公开(公告)号：US06198854B1

公开(公告)日：2001-03-06

申请号：US09236908

申请日：1999-01-26

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: G02B600

CPC classification number: G02F1/2257 ,  G02F2201/126

Abstract: A Mach-Zehnder modulator intensity modulating signal light using a simple drive circuit for the modulating voltage. The modulator includes two waveguides with respective multiple quantum well (MQW) structures. Well layers of the MQW structures of the two optical waveguides have different thicknesses or are made from different materials so the phase of light propagating through one waveguide advances and through the other waveguide is delayed in response to the same applied voltage. The phase-changed light signals are combined as an output light signal that is intensity modulated.

Abstract translation: Mach-Zehnder调制器强度调制信号灯使用简单的驱动电路进行调制电压。 调制器包括具有相应的多量子阱（MQW）结构的两个波导。 两个光波导的MQW结构的阱层具有不同的厚度或者由不同的材料制成，因此通过一个波导传播的光的相位前进，并且通过另一个波导响应于相同的施加电压被延迟。 相变光信号被组合为强度调制的输出光信号。