公开(公告)号：US20150171016A1

公开(公告)日：2015-06-18

申请号：US14117531

申请日：2012-05-16

申请人： Hiroyuki Okuno ,  Toshihiro Kugimiya ,  Yoshihiro Yokota ,  Takeaki Maeda

发明人： Hiroyuki Okuno ,  Toshihiro Kugimiya ,  Yoshihiro Yokota ,  Takeaki Maeda

IPC分类号： H01L23/532 ,  C22C21/02 ,  H01L29/20 ,  C22C21/12 ,  C22C21/14 ,  H01L29/16 ,  H01J37/34 ,  C22C21/00

CPC分类号： H01L23/53219 ,  C22C21/00 ,  C22C21/02 ,  C22C21/12 ,  C22C21/14 ,  C22F1/04 ,  C23C14/165 ,  C23C14/3414 ,  H01J37/3429 ,  H01L21/2855 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/45 ,  H01L29/452 ,  H01L2924/0002 ,  Y10T428/12431 ,  H01L2924/00

摘要： Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 μm. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 μΩcm or less.

摘要翻译： 提供一种用于半导体器件的Al合金膜，其耐热性优异，并且即使在Al合金膜暴露于高温的情况下也能抑制小丘的产生，并且作为膜具有低电阻率。 本发明涉及一种用于半导体器件的Al合金膜，其特征在于，在将Al合金膜保持在500℃进行热处理之后，满足下述所有特征（a） - （c） 30分钟，膜厚500nm〜5μm。 （a）Al基体的最大粒径为800nm以下。 （b）小丘密度小于1×109个/ m2。 （c）电阻率为10μΩ·cm以上。

公开(公告)号：US08907334B2

公开(公告)日：2014-12-09

申请号：US13642314

申请日：2011-04-18

申请人： Aya Miki ,  Yumi Iwanari ,  Toshihiro Kugimiya ,  Shinya Morita ,  Yasuaki Terao ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn

发明人： Aya Miki ,  Yumi Iwanari ,  Toshihiro Kugimiya ,  Shinya Morita ,  Yasuaki Terao ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.

摘要翻译： 公开了一种用于薄膜晶体管的半导体层的氧化物，所述氧化物的薄膜晶体管的开关特性优异，特别是即使在ZnO浓度高的区域也能够稳定地获得良好的特性， 甚至在形成钝化层之后和施加应力之后。 氧化物用于薄膜晶体管的半导体层，上述氧化物含有Zn和Sn，还含有选自由Al，Hf，Ta，Ti，Nb，Mg，Ga组成的组X中的至少一种元素 ，和稀土元素。

公开(公告)号：US20140054588A1

公开(公告)日：2014-02-27

申请号：US14113303

申请日：2012-04-19

申请人： Takeaki Maeda ,  Toshihiro Kugimiya

发明人： Takeaki Maeda ,  Toshihiro Kugimiya

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  G02F1/1368 ,  H01L27/1222 ,  H01L29/78693

摘要： There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays depositing and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.

摘要翻译： 提供了一种氧化物半导体层，当在有机EL显示器沉积和液晶显示器等显示装置中沉积钝化层等时，能够使薄膜晶体管的电特性稳定，而不需要氧化处理层。 本发明的薄膜晶体管结构至少在衬底上具有氧化物半导体层，源 - 漏电极和钝化层，从衬底侧开始，其中氧化物半导体层是 第一氧化物半导体层和第二氧化物半导体层; 第一氧化物半导体层的Zn含量占所有金属元素的百分比为50原子％以上，第一氧化物半导体层形成在源 - 漏电极和钝化层侧; 所述第二氧化物半导体层含有选自In，Ga和Zn中的至少一种元素，并且所述第二氧化物半导体层形成在所述基板侧; 并且第一氧化物半导体层与源 - 漏电极和钝化层直接接触。

公开(公告)号：US20120199866A1

公开(公告)日：2012-08-09

申请号：US13502849

申请日：2010-11-16

申请人： Yumi Iwanari ,  Toshihiro Kugimiya ,  Takayuki Hirano ,  Takeaki Maeda

发明人： Yumi Iwanari ,  Toshihiro Kugimiya ,  Takayuki Hirano ,  Takeaki Maeda

IPC分类号： H01L51/54 ,  C23C14/14 ,  H01L23/48

CPC分类号： H01L51/5218 ,  C22C21/00 ,  C23C14/185 ,  C23C14/3414 ,  H01L51/5271 ,  H05B33/26 ,  H05B33/28

摘要： Disclosed is a reflective anode electrode for an organic EL display, which comprises a novel Al-based alloy reflective film. The reflective anode electrode is capable of assuring low contact resistance and high reflectance even in cases where the Al reflective film is in direct contact with an oxide conductive film such as an ITO or IZO film. In addition, when the Al reflective film is formed into a laminated structure together with the oxide conductive film, the work function of the surface of the upper oxide conductive film is equally high with the work function of a laminated structure that is composed of a general-purpose Ag-based alloy film and an oxide conductive film. Specifically disclosed is a reflective anode electrode for an organic EL display, which is formed on a substrate and characterized by comprising a laminated structure that is composed of an Al-based alloy film containing 0.1-6% by atom of Ag and an oxide conductive film that is formed on the Al-based alloy film so as to be in direct contact with the Al-based alloy film.

摘要翻译： 公开了一种用于有机EL显示器的反射性阳极电极，其包括新型的Al基合金反射膜。 即使在Al反射膜与诸如ITO或IZO膜的氧化物导电膜直接接触的情况下，反射型阳极也能够确保低接触电阻和高反射率。 此外，当Al反射膜与氧化物导电膜一起形成层压结构时，上部氧化物导电膜的表面的功函数与由一般构成的层叠结构的功函数相同 使用Ag基合金膜和氧化物导电膜。 具体公开了一种用于有机EL显示器的反射性阳极电极，其形成在基板上，其特征在于包括层叠结构，该叠层结构由含有0.1-6原子％的Ag的Al系合金膜和氧化物导电膜 其形成在Al基合金膜上，以与Al基合金膜直接接触。

公开(公告)号：US07154180B2

公开(公告)日：2006-12-26

申请号：US11106439

申请日：2005-04-15

申请人： Hiroshi Gotoh ,  Toshihiro Kugimiya ,  Junichi Nakai ,  Katsufumi Tomihisa

发明人： Hiroshi Gotoh ,  Toshihiro Kugimiya ,  Junichi Nakai ,  Katsufumi Tomihisa

IPC分类号： H01L23/52 ,  H01L23/22

CPC分类号： H01L29/66757 ,  C23C14/185 ,  C23C14/3414 ,  G02F1/133553 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L2924/0002 ,  Y10T428/12 ,  H01L2924/00

摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.

公开(公告)号：US20060091792A1

公开(公告)日：2006-05-04

申请号：US11235196

申请日：2005-09-27

申请人： Toshihiro Kugimiya ,  Katsufumi Tomihisa ,  Katsutoshi Takagi ,  Junichi Nakai

发明人： Toshihiro Kugimiya ,  Katsufumi Tomihisa ,  Katsutoshi Takagi ,  Junichi Nakai

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L23/53233 ,  C23C14/185 ,  G02F2001/136295 ,  H01J29/02 ,  H01J2211/225 ,  H01L27/124 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

摘要： A Cu alloy thin film contains Fe and P with the balance being substantially Cu, in which the contents of Fe and P satisfy all the following conditions (1) to (3), and in which Fe2P is precipitated at grain boundaries of Cu after heat treatment at 200° C. to 500° C. for 1 to 120 minutes: 1.4NFe+8NP 1.0  (2) 12NFe+NP>0.5  (3) wherein NFe represents the content of Fe (atomic percent); and NP represents the content of P (atomic percent).

摘要翻译： Cu合金薄膜含有Fe和P，余量基本上为Cu，其中Fe和P的含量满足以下所有条件（1）至（3），其中Fe 2 P 在200℃至500℃热处理1〜120分钟后，在Cu的晶界处析出：<？在线公式描述=“在线公式”末端=“铅”→> 1.4N ＆lt;＆lt;＆lt;＆lt;＆lt;＆lt; 3＆gt;＆lt; 1.3（1）＆lt; -formulae description =“In-line Formulas”end =“lead”？> N＆lt;＆lt;＆lt;＆lt;＆lt; P＆lt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 12N + N > 0.5（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N Fe表示Fe含量（原子百分数） ; N P表示P（原子百分比）的含量。

公开(公告)号：US20050153162A1

公开(公告)日：2005-07-14

申请号：US10999027

申请日：2004-11-30

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Katsufumi Tomihisa ,  Yuuki Tauchi ,  Toshihiro Kugimiya

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Katsufumi Tomihisa ,  Yuuki Tauchi ,  Toshihiro Kugimiya

IPC分类号： H01J11/02 ,  B32B15/01 ,  C22C5/06 ,  C23C14/34

CPC分类号： C22C5/06 ,  C23C14/185 ,  C23C14/3414 ,  Y10T428/12896

摘要： An active matrix flat panel display includes pixels, TFTs for driving the pixels, and interconnecting lines connected to the TFTs. The interconnecting lines are formed by processing an interconnecting film of an Ag-base alloy containing 0.1 to 4.0 at % Nd and/or 0.01 to 1.5 at % Bi, and Ag as the remainder or an Ag-base alloy containing, in addition to Nd and/or Bi, one or some of elements including Cu, Au and Pd in a content in the range of 0.01 to 1.5 at %.

摘要翻译： 有源矩阵平板显示器包括像素，用于驱动像素的TFT和连接到TFT的互连线。 互连线通过加工含有0.1〜4.0at％的Nd和/或0.01〜1.5at％的Bi和Ag作为余量的Ag基合金的互连膜或除了Nd之外还含有Ag基合金 和/或Bi，包含Cu，Au和Pd中的一种或一些元素，其含量范围为0.01至1.5at％。

公开(公告)号：US09379248B2

公开(公告)日：2016-06-28

申请号：US14113303

申请日：2012-04-19

申请人： Takeaki Maeda ,  Toshihiro Kugimiya

发明人： Takeaki Maeda ,  Toshihiro Kugimiya

IPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L27/12

CPC分类号： H01L29/7869 ,  G02F1/1368 ,  H01L27/1222 ,  H01L29/78693

摘要： There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays depositing and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.

摘要翻译： 提供了一种氧化物半导体层，当在有机EL显示器沉积和液晶显示器等显示装置中沉积钝化层等时，能够使薄膜晶体管的电特性稳定，而不需要氧化处理层。 本发明的薄膜晶体管结构至少在衬底上具有氧化物半导体层，源 - 漏电极和钝化层，从衬底侧开始，其中氧化物半导体层是 第一氧化物半导体层和第二氧化物半导体层; 第一氧化物半导体层的Zn含量占所有金属元素的百分比为50原子％以上，第一氧化物半导体层形成在源 - 漏电极和钝化层侧; 所述第二氧化物半导体层含有选自In，Ga和Zn中的至少一种元素，并且所述第二氧化物半导体层形成在所述基板侧; 并且第一氧化物半导体层与源 - 漏电极和钝化层直接接触。

公开(公告)号：US09299474B2

公开(公告)日：2016-03-29

申请号：US13812277

申请日：2011-07-28

申请人： Shinya Morita ,  Aya Miki ,  Yumi Iwanari ,  Toshihiro Kugimiya ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn

发明人： Shinya Morita ,  Aya Miki ,  Yumi Iwanari ,  Toshihiro Kugimiya ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn

IPC分类号： H01B1/08 ,  H01L29/24 ,  C23C14/08 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01B1/08 ,  C23C14/08 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/7869

摘要： There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.

摘要翻译： 提供了用于薄膜晶体管的半导体层的氧化物，该氧化物可以提供具有优异的开关特性的薄膜晶体管，并且即使在形成钝化层之后也可以稳定地获得氧化物有利特性。 根据本发明的用于薄膜晶体管的半导体层的氧化物包括Zn，Sn和Si。

公开(公告)号：US09178073B2

公开(公告)日：2015-11-03

申请号：US13989944

申请日：2011-11-28

申请人： Aya Miki ,  Shinya Morita ,  Toshihiro Kugimiya ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Gun Hee Kim

发明人： Aya Miki ,  Shinya Morita ,  Toshihiro Kugimiya ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Gun Hee Kim

IPC分类号： H01L29/786 ,  C01G19/00 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02 ,  C04B35/453 ,  C23C14/54 ,  C23C14/58 ,  C04B35/01 ,  C04B35/457 ,  H01L27/12

CPC分类号： H01L29/7869 ,  C01G19/006 ,  C01P2006/10 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/548 ,  C23C14/5806 ,  C23C14/5873 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/78693

摘要： This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

摘要翻译： 用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，并且当表示为[Zn]时，包含在氧化物中的金属元素的含量（at％）满足式（1）至（3） [Sn]和[In]。 [In] /（[In] + [Zn] + [Sn]）≥-0.53×[Zn] /（[Zn] + [Sn]）+0.36（1）[In] /（[In] ] + [Sn]）≥2.28×[Zn] /（[Zn] + [Sn]）-2.01（2）[In] /（[In] + [Zn] + [Sn]）＆ ] /（[Zn] + [Sn]） - 0.32（3）本发明能够提供实现高迁移率并具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物。