公开(公告)号：US07858483B2

公开(公告)日：2010-12-28

申请号：US11154384

申请日：2005-06-15

申请人： Hyung Bok Choi ,  Jong Bum Park ,  Kee Jeung Lee ,  Jong Min Lee

发明人： Hyung Bok Choi ,  Jong Bum Park ,  Kee Jeung Lee ,  Jong Min Lee

IPC分类号： H01L21/20

CPC分类号： H01L27/10814 ,  H01L27/10855 ,  H01L28/75 ,  H01L28/91

摘要： A method for forming a capacitor of a semiconductor device includes forming a first insulation layer having a storage node plug on a semiconductor substrate; forming an etch stop layer and a second insulation layer sequentially on the substrate having the first insulation layer; forming a hole exposing a portion of the storage node plug by selectively etching the second insulation layer by using the etch stop layer; recessing a portion of the storage node plug exposed by the hole; forming a barrier metal layer on a surface of the recessed storage node plug; forming a storage node electrode connected to the storage node plug through the barrier metal layer in the hole; and forming a dielectric layer and a metal layer for a plate electrode sequentially on the storage node electrode.

摘要翻译： 一种形成半导体器件的电容器的方法包括在半导体衬底上形成具有存储节点插头的第一绝缘层; 在具有第一绝缘层的基板上依次形成蚀刻停止层和第二绝缘层; 通过使用所述蚀刻停止层选择性地蚀刻所述第二绝缘层，形成暴露所述存储节点插塞的一部分的孔; 使由孔露出的存储节点插头的一部分凹陷; 在所述凹形存储节点插塞的表面上形成阻挡金属层; 形成通过所述孔中的所述阻挡金属层与所述存储节点插头连接的存储节点电极; 以及在所述存储节点电极上依次形成用于平板电极的电介质层和金属层。

公开(公告)号：US07199004B2

公开(公告)日：2007-04-03

申请号：US10999568

申请日：2004-11-30

申请人： Kee Jeung Lee

发明人： Kee Jeung Lee

IPC分类号： H01L21/8242

CPC分类号： H01L21/02192 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02356 ,  H01L21/31604 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

摘要： Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method of forming a capacitor of a semiconductor device comprises steps of: forming a bottom electrode on a semiconductor substrate with a storage node contact so that the bottom electrode is connected with the storage node contact; plasma-nitrifying the bottom electrode to form a first nitrification film on the surface of the bottom electrode; forming a LaTbO dielectric film on the bottom electrode including the first nitrification film; plasma-nitrifying the LaTbO dielectric film to form a second nitrification film on the surface of the LaTbO dielectric film; and forming a top electrode on the LaTbO dielectric film including the second nitrification film.

摘要翻译： 公开了一种形成半导体器件的电容器的方法，其可以在确保所需的充电电容的同时确保期望的漏电流特性。 形成半导体器件的电容器的本发明的方法包括以下步骤：在具有存储节点接触的半导体衬底上形成底部电极，使得底部电极与存储节点接触连接; 对底部电极进行等离子体硝化，以在底部电极的表面上形成第一硝化膜; 在包括第一硝化膜的底部电极上形成LaTbO电介质膜; 等离子体硝化LaTbO介电膜，以在LaTbO介电膜的表面上形成第二个硝化膜; 以及在包括第二硝化膜的LaTbO电介质膜上形成顶部电极。

公开(公告)号：US06503810B2

公开(公告)日：2003-01-07

申请号：US09750035

申请日：2000-12-29

申请人： Kee Jeung Lee

发明人： Kee Jeung Lee

IPC分类号： H01L2120

CPC分类号： H01L21/022 ,  C23C16/409 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691 ,  H01L21/3211 ,  H01L27/10814 ,  H01L28/56

摘要： A method for forming a capacitor for semiconductor devices is provided. In the method, a storage electrode is formed on a semiconductor wafer, and the surface of the storage electrode is nitridated so as to prevent reduction of the dielectric strength by an oxide layer that is possibly formed on the storage electrode. Then, a dielectric layer is formed of a LixTa1−xO3 layer having a stable structure and a large dielectric constant (&egr;=45), and a plate electrode is formed on the dielectric layer, thereby resulting in a capacitor. The capacitor has high capacitance values enough for high-integration semiconductor devices with smaller sizes.

摘要翻译： 提供一种用于形成用于半导体器件的电容器的方法。 在该方法中，在半导体晶片上形成存储电极，并且将存储电极的表面氮化，以防止可能形成在存储电极上的氧化物层降低介电强度。 然后，由具有稳定结构和大介电常数（ε= 45）的LixTa1-xO3层形成电介质层，在电介质层上形成平板电极，从而形成电容器。 电容器具有足够高的尺寸较小的高集成半导体器件的高电容值。

公开(公告)号：US06372667B1

公开(公告)日：2002-04-16

申请号：US09602780

申请日：2000-06-23

申请人： Kee Jeung Lee

发明人： Kee Jeung Lee

IPC分类号： H01L2131

CPC分类号： C23C16/405 ,  H01L21/31604 ,  H01L21/76895 ,  H01L28/84 ,  H01L28/91

摘要： A method of manufacturing a capacitor for semiconductor memory devices is disclosed. According to the present invention, a lower electrode is formed on the semiconductor substrate. A Ta2O5 layer with a tantalum-based carbon-free precursor is formed on the lower electrode. And, an upper electrode is formed on the Ta2O5 layer.

摘要翻译： 公开了一种制造用于半导体存储器件的电容器的方法。 根据本发明，在半导体基板上形成下电极。 在下电极上形成具有钽类无碳前体的Ta 2 O 5层。 并且，在Ta 2 O 5层上形成上电极。

公开(公告)号：US06316307B1

公开(公告)日：2001-11-13

申请号：US09608891

申请日：2000-06-30

申请人： Kee Jeung Lee ,  Kwang Chul Joo

发明人： Kee Jeung Lee ,  Kwang Chul Joo

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/3145 ,  H01L27/1085 ,  H01L28/75 ,  H01L28/84

摘要： Disclosed is a method of forming a capacitor for a semiconductor memory device according to the present invention. The method includes the steps of: forming a lower electrode on a semiconductor substrate; performing a surface-treatment process to prevent a natural oxide layer from generating on the surface of the lower electrode; forming a TaON layer on the upper part of the surface-treated lower electrode by a reaction of Ta chemical vapor, O2 gas and NH3 gas; crystallizing the TaON layer; and forming an upper electrode on the upper part of the TaON layer, wherein the TaON layer is formed in a low pressure chemical vapor deposition (LPCVD) chamber equipped with a shower head injecting Ta chemical vapor, O2 gas and NH3 gas on an upper part thereof and at a temperature of 300 to 600° C. with pressure of 0.1 to 10 Torr; wherein the TaON layer is formed in the LPCVD chamber that a first injector to which Ta chemical vapor and O2 gas are injected and formed at one side-wall of the TaON layer and a second injector to which NH3 gas is injected and formed at the other side-wall opposed to the first injector, thereby injecting reaction gases in a counter-flow state, and the TaON layer is formed at a temperature of 300 to 600° C. with pressure of 0.1 to 10 Torr; wherein the TaON layer is formed in the LPCVD chamber that a first injector to which Ta chemical vapor and O2 gas are injected and formed at one side-wall of the TaON layer and a second injector to which NH3 gas is injected and formed at the other side-wall opposed to the first injector, thereby injecting reaction gases in a counter-flow state, and the TaON layer is formed at a temperature of 300 to 600° C. with pressure of 0.1 to 10 Torr.

摘要翻译： 公开了一种形成根据本发明的半导体存储器件的电容器的方法。 该方法包括以下步骤：在半导体衬底上形成下电极; 执行表面处理工艺以防止在下电极的表面上产生自然氧化物层; 通过Ta化学气相，O 2气和NH 3气的反应在表面处理的下电极的上部形成TaON层; 结晶TaON层; 在所述TaON层的上部形成上部电极，其中，所述TaON层形成在配备有在上部注入Ta化学蒸气，O 2气体和NH 3气体的喷淋头的低压化学气相沉积（LPCVD）室 温度为300〜600℃，压力为0.1〜10乇; 其中在LPCVD室中形成TaON层，在TaON层的一个侧壁处注入和形成Ta化学气体和O 2气体的第一喷射器，在另一个侧面形成NH 3气体的第二喷射器 侧壁与第一喷射器相对，从而以反流状态注入反应气体，并且在压力为0.1至10托的300至600℃的温度下形成TaON层; 其中在LPCVD室中形成TaON层，在TaON层的一个侧壁处注入和形成Ta化学气体和O 2气体的第一喷射器，在另一个侧面形成NH 3气体的第二喷射器 与第一喷射器相对的侧壁，从而以反流状态注入反应气体，并且在300至600℃的温度下以0.1至10托的压力形成TaON层。

公开(公告)号：US07608517B2

公开(公告)日：2009-10-27

申请号：US11122298

申请日：2005-05-04

申请人： Kee Jeung Lee

发明人： Kee Jeung Lee

IPC分类号： H01L21/285

CPC分类号： H01L21/3141 ,  H01L21/02071 ,  H01L21/02186 ,  H01L21/02194 ,  H01L28/65 ,  H01L28/84 ,  H01L28/91

摘要： Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps of: forming a storage electrode on a semiconductor substrate; forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode; and forming a plate electrode on the dielectric layer formed of Ti(1-x)TbxO.

摘要翻译： 公开了一种用于形成半导体器件的电容器的方法，其可以确保所需的充电容量并且还提高漏电流特性。 该方法包括以下步骤：在半导体衬底上形成存储电极; 在所述存储电极上形成由Ti（1-x）TbxO形成的电介质层; 在由Ti（1-x）TbxO形成的电介质层上形成平板电极。

公开(公告)号：US07273781B2

公开(公告)日：2007-09-25

申请号：US11254261

申请日：2005-10-20

申请人： Kee Jeung Lee

发明人： Kee Jeung Lee

IPC分类号： H01L21/8242

CPC分类号： H01L28/91

摘要： To form a capacitor in a semiconductor device, an etching barrier layer and a mold insulating layer are sequentially formed on an interlayer insulating film having a contact plug. A hole exposing the contact plug is formed by etching the mold insulating layer and the etching barrier layer. A first blocking layer having a wet etching rate lower than that of the mold insulating layer is formed on the hole sidewall. A storage electrode and a second blocking layer made from the identical material of the first blocking layer are formed on the resultant structure. The predetermined portions of the second blocking layer and the metal layer formed on the mold insulating layer are removed. A cylinder type storage electrode is formed by wet etching the mold insulating layer. A dielectric layer is formed on the cylinder type storage electrode. A plate electrode is formed on the dielectric layer.

摘要翻译： 为了在半导体器件中形成电容器，在具有接触插塞的层间绝缘膜上依次形成蚀刻阻挡层和模具绝缘层。 通过蚀刻模具绝缘层和蚀刻阻挡层来形成暴露接触插塞的孔。 在孔侧壁上形成具有低于模具绝缘层的湿蚀刻速率的第一阻挡层。 在所得结构上形成由第一阻挡层的相同材料制成的存储电极和第二阻挡层。 除去形成在模具绝缘层上的第二阻挡层和金属层的预定部分。 通过湿式蚀刻模具绝缘层形成圆柱型存储电极。 在圆筒型存储电极上形成电介质层。 在电介质层上形成平板电极。

公开(公告)号：US20070042540A1

公开(公告)日：2007-02-22

申请号：US11254261

申请日：2005-10-20

申请人： Kee Jeung Lee

发明人： Kee Jeung Lee

IPC分类号： H01L21/8244

CPC分类号： H01L28/91

摘要： To form a capacitor in a semiconductor device, an etching barrier layer and a mold insulating layer are sequentially formed on an interlayer insulating film having a contact plug. A hole exposing the contact plug is formed by etching the mold insulating layer and the etching barrier layer. A first blocking layer having a wet etching rate lower than that of the mold insulating layer is formed on the hole sidewall. A storage electrode and a second blocking layer made from the identical material of the first blocking layer are formed on the resultant structure. The predetermined portions of the second blocking layer and the metal layer formed on the mold insulating layer are removed. A cylinder type storage electrode is formed by wet etching the mold insulating layer. A dielectric layer is formed on the cylinder type storage electrode. A plate electrode is formed on the dielectric layer.

公开(公告)号：US06964900B2

公开(公告)日：2005-11-15

申请号：US10331016

申请日：2002-12-27

申请人： Kee Jeung Lee ,  Byung Seop Hong

发明人： Kee Jeung Lee ,  Byung Seop Hong

IPC分类号： H01L21/316 ,  H01L21/02 ,  H01L21/314 ,  H01L21/318 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L21/3143 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/31604 ,  H01L21/3185 ,  H01L28/40 ,  H01L28/84 ,  H01L28/90

摘要： A capacitor in a semiconductor device having a dual dielectric film structure and a fabrication method therefor are disclosed. The capacitor comprises: a lower electrode formed on a semiconductor substrate, a dielectric film of a dual dielectric film structure composed of an Si3N4 chloride-free thin film and a Ta2O5 thin film, which is formed on the lower electrode, and an upper electrode formed on the dielectric film. Meanwhile, the method for fabricating the capacitor comprises the steps of: forming a lower electrode on a semiconductor substrate, forming a dielectric film of a dual dielectric film structure composed of an Si3N4 thin film and a Ta2O5 thin film on the lower electrode, and forming an upper electrode on the dielectric film.

公开(公告)号：US06740553B1

公开(公告)日：2004-05-25

申请号：US09606097

申请日：2000-06-26

申请人： Kee Jeung Lee ,  Il Keoun Han ,  Hong Seon Yan

发明人： Kee Jeung Lee ,  Il Keoun Han ,  Hong Seon Yan

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/3145 ,  H01L27/10852

摘要： Disclosed are a capacitor for a semiconductor device capable of increasing storage capacitance and preventing leakage current, and a method of manufacturing the same. According to the present invention, a lower electrode is formed on a semiconductor substrate. A surface of the lower electrode is surface-treated to prevent generation of a natural oxide layer. A TaON layer as a dielectric layer is deposited on the lower electrode. Impurities of the TaON layer are crystallized and out-diffused. And an upper electrode is deposited on the TaON layer. Herein, the TaON layer is formed by a chemical vapor reaction of Ta obtained from O2 gas and NH3 gas in an LPCVD chamber to which O2 gas and NH3 gas are supplied at a pressure of 0.1˜10 Torr at a temperature of 300˜600° C., respectively.

摘要翻译： 公开了一种能够增加存储电容并防止漏电流的半导体器件的电容器及其制造方法。 根据本发明，在半导体基板上形成下电极。 对下部电极的表面进行表面处理以防止天然氧化物层的产生。 作为电介质层的TaON层沉积在下电极上。 TaON层的杂质结晶化并扩散。 并且在TaON层上沉积上电极。 这里，通过在200V〜600°C的压力下，在0.1〜10乇的压力下，在由LPC气体室供给的O 2气体和NH 3气体中的从O 2气体获得的Ta与NH 3气体的化学气相反应形成TaON层 C.分别。