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25 条记录 (耗时 0.015 秒)

    PLASMA PROCESSING METHOD
    11.
    发明申请
    PLASMA PROCESSING METHOD 有权
    等离子体处理方法

    公开(公告)号：US20100029024A1

    公开(公告)日：2010-02-04

    申请号：US12202692

    申请日：2008-09-02

    申请人： Masatoshi Miyake ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Masatoshi Miyake ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： H01L21/66 ,  H01L21/3065

    CPC分类号： H01L21/31138 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116 ,  Y10S438/905

    摘要： The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means 41, 42 for respectively supplying processing gas independently to a center area of the processing chamber 1 and to an area near the sidewall thereof; a sample mounting electrode 13 for mounting a sample W to be processed; a high frequency power supply 21 for generating plasma; an antenna 11; and a plasma generating means 17 for generating plasma in the processing chamber; the method comprising etching an insulating film on the sample W using plasma; and supplying a large flow of inert gas from the center area of the chamber while having the sample W mounted on the sample mounting electrode 13, supplying deposit removal gas to only the area near the side wall of the processing chamber 1 and controlling the plasma density distribution to thereby vary the plasma density at the center area of the processing chamber and the plasma density at the area near the side wall of the processing chamber, so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.

    摘要翻译： 本发明提供一种等离子体处理方法，其能够降低对低k膜或底层施加的损伤。 该方法使用包括气体供给装置41,42的等离子体处理装置，用于分别独立地向处理室1的中心区域供应处理气体，并且分配到其侧壁附近的区域; 用于安装待处理样品W的样品安装电极13; 用于产生等离子体的高频电源21; 天线11; 以及用于在处理室中产生等离子体的等离子体产生装置17; 该方法包括使用等离子体蚀刻样品W上的绝缘膜; 并且在将样品W安装在样品安装电极13上的同时，从室的中心区域供给大量惰性气体，仅将沉积物去除气体提供给处理室1的侧壁附近的区域，并控制等离子体密度 从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的区域的等离子体密度，从而进行沉积膜去除工艺，以去除沉积在侧壁上的膜 处理室。

    HEAT TREATMENT APPARATUS
    13.
    发明申请
    HEAT TREATMENT APPARATUS 审中-公开
    热处理设备

    公开(公告)号：US20130112669A1

    公开(公告)日：2013-05-09

    申请号：US13354358

    申请日：2012-01-20

    申请人： Takashi UEMURA ,  Kenetsu Yokogawa ,  Masatoshi Miyake ,  Masaru Izawa ,  Satoshi Sakai

    发明人： Takashi UEMURA ,  Kenetsu Yokogawa ,  Masatoshi Miyake ,  Masaru Izawa ,  Satoshi Sakai

    IPC分类号： B23K9/00

    CPC分类号： H01J37/32082

    摘要： The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.

    摘要翻译： 本发明提供一种热处理装置，即使在将待加热的样品加热至1200℃以上的情况下，也能够在保持热效率高的同时降低加工基板的表面粗糙化。 本发明是一种对待加热样品进行热处理的热处理装置，其中通过辉光放电产生的等离子体被用作加热源，被加热物被间接加热。

    Room temperature curable organopolysiloxane composition and making method
    15.
    发明授权
    Room temperature curable organopolysiloxane composition and making method 失效
    室温可固化有机聚硅氧烷组合物及制备方法

    公开(公告)号：US06342575B1

    公开(公告)日：2002-01-29

    申请号：US09641752

    申请日：2000-08-21

    申请人： Masatoshi Miyake ,  Masaya Arakawa

    发明人： Masatoshi Miyake ,  Masaya Arakawa

    IPC分类号： C08G7716

    CPC分类号： C08L83/04 ,  C08G77/04 ,  Y10S528/901 ,  C08L2666/44 ,  C08L2666/54

    摘要： A room temperature curable organopolysiloxane composition comprising (1) a hydroxyl end-blocked organopolysiloxane having a viscosity of 10-1,000,000 centistokes at 25° C. in admixture with a premix of (2) methyltriacetoxysilane or a partial hydrolyzate thereof as a curing agent and (3) methanol is improved in shelf stability, physical properties and outer appearance as well as adhesion to aluminum.

    摘要翻译： 一种室温可固化的有机基聚硅氧烷组合物，其包含（1）在25℃粘度为10-1,000,000厘沲的羟基封端的有机聚硅氧烷与（2）甲基三乙酰氧基硅烷或其部分水解产物作为固化剂和（ 3）甲醇的贮存稳定性，物理性能和外观以及对铝的粘附性均有所提高。

    Plasma processing apparatus
    16.
    发明申请
    Plasma processing apparatus 审中-公开
    等离子体处理装置

    公开(公告)号：US20070023398A1

    公开(公告)日：2007-02-01

    申请号：US11355165

    申请日：2006-02-16

    申请人： Hiroyuki Kobayashi ,  Masatoshi Miyake ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Hiroyuki Kobayashi ,  Masatoshi Miyake ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： B23H7/00 ,  B23H1/00

    CPC分类号： H01J37/32678 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/335

    摘要： A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.

    摘要翻译： 提供一种等离子体处理装置，其可以在放电期间或之后去除待处理物体上的异物。 等离子体处理装置包括处理室; 用于将处理气体供给到处理室中的处理气体供给单元，用于向处理室供给射频电力并形成等离子体的天线电极，用于抽出处理室内部的真空排气单元; 设置电极，用于将物体放置在处理室中并将物体保持在其中; 以及用于向天线电极提供负电位的直流电源。

    Preparation of organoxy-terminated organopolysiloxanes
    18.
    发明授权
    Preparation of organoxy-terminated organopolysiloxanes 失效
    有机氧基封端的有机聚硅氧烷的制备

    公开(公告)号：US06403749B1

    公开(公告)日：2002-06-11

    申请号：US09714142

    申请日：2000-11-17

    申请人： Masatoshi Miyake ,  Chinami Matsui ,  Kenichi Kimura ,  Hironao Fujiki

    发明人： Masatoshi Miyake ,  Chinami Matsui ,  Kenichi Kimura ,  Hironao Fujiki

    IPC分类号： C08G7706

    CPC分类号： C08G77/08 ,  C08G77/18

    摘要： An organoxy-terminated organopolysiloxane of the general formula (A): wherein R is a monovalent hydrocarbon group, R1 is a monovalent hydrocarbon group of 1-18 carbon atoms, and R2 is an organic group of 1-18 carbon atoms, and “a” is an integer of 0, 1 or 2, is prepared by reacting an organopolysiloxane of the formula: HO(R2SiO)nH having a viscosity of 10-100,000 centistokes at 25° C. with an organoxysilane of the formula: (R2O)4-a—Si—(R1)a or a partial hydrolyzate thereof in the presence of a tetraalkoxytitanium.

    摘要翻译： 通式（A）的有机氧基封端的有机聚硅氧烷：其中R是一价烃基，R1是1-18个碳原子的一价烃基，R2是1-18个碳原子的有机基团，“a “是0或1或2的整数，其通过在25℃下粘度为10-100,000厘沲的下式的有机聚硅氧烷（HO（R 2 SiO）nH）与下式的有机硅烷：（R 2 O）4 -a-Si-（R1）a或其部分水解产物在四烷氧基钛存在下进行。

    Process for the production of RTV organopolysiloxane compositions
    19.
    发明授权
    Process for the production of RTV organopolysiloxane compositions 失效
    制备RTV有机聚硅氧烷组合物的方法

    公开(公告)号：US06214930B1

    公开(公告)日：2001-04-10

    申请号：US09237799

    申请日：1999-01-27

    申请人： Masatoshi Miyake ,  Kazuyuki Suzuki ,  Mamoru Teshigawara ,  Tsuneo Kimura

    发明人： Masatoshi Miyake ,  Kazuyuki Suzuki ,  Mamoru Teshigawara ,  Tsuneo Kimura

    IPC分类号： C08L8306

    CPC分类号： C08L83/04 ,  C08G77/04 ,  C08G77/14 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08L83/14 ,  Y10S528/901 ,  C08L2666/44 ,  C08L2666/54

    摘要： In a process for preparing a one-package RTV organopolysiloxane composition comprising (A) an organopolysiloxane containing at least two Si—OH groups or hydrolyzable groups, (B) an organosilane having at least two hydrolyzable groups or a partial hydrolyzate thereof, and (C) an inorganic filler, components (A) and (B) are premixed in a substantially anhydrous state, and component (C) is then added to the premix. Despite the absence of sag-control agents, the composition in the uncured state has a sufficient viscosity for sag-control, ease of extrusion, and improved slump properties.

    摘要翻译： 在制备包含（A）含有至少两个Si-OH基或可水解基团的有机聚硅氧烷的单包装RTV有机聚硅氧烷组合物的方法中，（B）具有至少两个可水解基团的有机硅烷或其部分水解产物，和（C ）无机填料，组分（A）和（B）以基本无水的状态预混合，然后将组分（C）加入到预混物中。 尽管没有下垂控制剂，但是在未固化状态下的组合物具有足够的下垂控制粘度，易于挤出和改善的坍落度特性。