公开(公告)号：US20060198162A1

公开(公告)日：2006-09-07

申请号：US10546777

申请日：2004-03-15

申请人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

发明人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC分类号： F21V7/04 ,  H01J1/62 ,  H01L33/00

CPC分类号： H01L33/60 ,  H01L33/486 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01S5/0224 ,  H01S5/02292 ,  H01L2924/00014 ,  H01L2924/00

摘要： The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation. A light-emitting element mounting member 200 includes: a substrate 2 including an element mounting surface 2a mounting a semiconductor light-emitting element 1 and first and second conductive regions 21, 22 disposed on the element mounting surface 2a and connected to the semiconductor light-emitting element 1; a reflective member 6 including a reflective surface 6a defining an internal space 6b for housing the semiconductor light-emitting element 1 and containing a metal disposed on the element mounting surface 1a; and a metal layer 13 disposed on the reflective surface 6a. The reflective surface 6a is sloped relative to the element mounting surface 2a so that a diameter of the internal space 6b is greater away from the element mounting surface 2a.

摘要翻译： 本发明的目的是提供一种发光元件安装构件和使用该发光元件安装构件的半导体装置，其易于处理并且允许充分的散热。 发光元件安装构件200包括：基板2，其包括安装半导体发光元件1的元件安装表面2a和设置在元件安装表面2a上并连接到半导体的半导体发光元件1的第一和第二导电区域21,22。 发光元件1; 反射构件6，其包括限定用于容纳半导体发光元件1并容纳设置在元件安装表面1a上的金属的内部空间6b的反射表面6a; 以及设置在反射表面6a上的金属层13。 反射表面6a相对于元件安装表面2a倾斜，使得内部空间6b的直径远离元件安装表面2a。

公开(公告)号：US07518155B2

公开(公告)日：2009-04-14

申请号：US10546777

申请日：2004-03-15

申请人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

发明人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/486 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01S5/0224 ,  H01S5/02292 ,  H01L2924/00014 ,  H01L2924/00

摘要： The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation.A light-emitting element mounting member 200 includes: a substrate 2 including an element mounting surface 2a mounting a semiconductor light-emitting element 1 and first and second conductive regions 21, 22 disposed on the element mounting surface 2a and connected to the semiconductor light-emitting element 1; a reflective member 6 including a reflective surface 6a defining an internal space 6b for housing the semiconductor light-emitting element 1 and containing a metal disposed on the element mounting surface 1a; and a metal layer 13 disposed on the reflective surface 6a. The reflective surface 6a is sloped relative to the element mounting surface 2a so that a diameter of the internal space 6b is greater away from the element mounting surface 2a.

摘要翻译： 本发明的目的是提供一种发光元件安装构件和使用该发光元件安装构件的半导体装置，其易于处理并且允许充分的散热。 发光元件安装构件200包括：基板2，其包括安装半导体发光元件1的元件安装表面2a和设置在元件安装表面2a上并连接到半导体发光元件1的第一和第二导电区域21,22。 发光元件1; 反射构件6，其包括限定用于容纳半导体发光元件1并且容纳设置在元件安装表面1a上的金属的内部空间6b的反射表面6a; 以及设置在反射面6a上的金属层13。 反射表面6a相对于元件安装表面2a倾斜，使得内部空间6b的直径远离元件安装表面2a。

公开(公告)号：US07491980B2

公开(公告)日：2009-02-17

申请号：US10569095

申请日：2004-08-18

申请人： Kenjiro Higaki ,  Sadamu Ishidu ,  Teruo Amoh ,  Yasushi Tsuzuki

发明人： Kenjiro Higaki ,  Sadamu Ishidu ,  Teruo Amoh ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative member 1 having a main surface 10 on which connecting-use electrode layers 41 and 42 are provided to form a device-mounting area 10a and (b) a frame-shaped member 2 placed on the main surface 10 so as to surround the device-mounting area 10a. The device-mounting area 10a has an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE1. A light-emitting-diode-constituting member LE2 mounts a semiconductor light-emitting device LE1 on the device-mounting area 10a of the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member 2. A light-emitting diode LE3 mounts the light-emitting-diode-constituting member LE2 on a package 7.

摘要翻译： 半导体发光装置安装构件BL包括：（a）具有主表面10的高散热构件1，其上设置有连接用电极层41和42以形成装置安装区域10a和（ b）围绕装置安装区域10a放置在主表面10上的框状构件2。 装置安装区域10a的面积为半导体发光装置LE1的面积的1.05〜4倍。 发光二极管构成部件LE2将半导体发光装置LE1安装在半导体发光元件安装部件BL的器件安装区域10a上，并具有荧光体和/或保护树脂LR 填充框状构件2的内部空间。发光二极管LE3将发光二极管构成构件LE2安装在封装7上。

公开(公告)号：US07420223B2

公开(公告)日：2008-09-02

申请号：US11929387

申请日：2007-10-30

申请人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

发明人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/642 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.

摘要翻译： 提供了用于充分去除由半导体元件产生的热的半导体器件。 半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1， 安装在元件安装表面2a上。 其中L为主面1的长度方向的长度，H为底面2b与元件安装面2a的距离，H / L的比为0.3以上。 当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。 金属层13设置在空腔2u的表面上。 此外，当在主表面1a上设置连接到外部部分的电极32时，在与电极32连接的部分的空腔侧上，主表面1a设置有凹槽。 凹槽用于防止电极32的连接构件34向外流动。

公开(公告)号：US20080067540A1

公开(公告)日：2008-03-20

申请号：US11929492

申请日：2007-10-30

申请人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

发明人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/642 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.

摘要翻译： 提供了用于充分去除由半导体元件产生的热的半导体器件。 半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1， 安装在元件安装表面2a上。 其中L为主面1的长度方向的长度，H为底面2b与元件安装面2a的距离，H / L的比为0.3以上。 当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。 金属层13设置在空腔2u的表面上。 此外，当在主表面1a上设置连接到外部部分的电极32时，在与电极32连接的部分的空腔侧，主表面1a设置有凹槽。 凹槽用于防止电极32的连接构件34向外流动。

公开(公告)号：US20060118808A1

公开(公告)日：2006-06-08

申请号：US10539926

申请日：2004-03-08

申请人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

发明人： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC分类号： H01L33/00

CPC分类号： H01L33/642 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.

摘要翻译： 提供了用于充分去除由半导体元件产生的热的半导体器件。 半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1， 安装在元件安装表面2a上。 在L表示主表面1a的长度方向上的长度a和H是底面2b与元件安装面2a之间的距离时，H / L的比例为0.3以上。 当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。 金属层13设置在空腔2u的表面上。

公开(公告)号：US07622203B2

公开(公告)日：2009-11-24

申请号：US10524270

申请日：2003-07-30

申请人： Yasushi Itoh ,  Sadamu Ishidu ,  Yasushi Tsuzuki

发明人： Yasushi Itoh ,  Sadamu Ishidu ,  Yasushi Tsuzuki

IPC分类号： B32B9/00

CPC分类号： C04B35/638 ,  B32B2311/08 ,  C04B35/581 ,  C04B35/62655 ,  C04B35/6303 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3241 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3865 ,  C04B2235/3895 ,  C04B2235/5436 ,  C04B2235/6021 ,  C04B2235/6025 ,  C04B2235/656 ,  C04B2235/668 ,  C04B2235/94 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2235/9638 ,  C04B2237/408 ,  H05B3/141

摘要： Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substrate 1 has a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 μm/mm or more and less than 2 μm/mm, and a local waviness height of 0 μm or more and 100 μm or less.

摘要翻译： 与现有技术相比，具有较大面积和较小厚度的氮化铝烧结体，其中氮化铝烧结体具有平坦度，具有控制的翘曲和/或波纹高度。 还提供了这种烧结体的制造方法以及使用这种烧结体的金属化基板和加热器。 氮化铝基板1的最大长度为320mm以上，厚度大于0mm且2mm以下，翘曲为0mum / mm以上且小于2mum / mm，局部波纹高度 0um以上且100μm以下。

公开(公告)号：US20050269749A1

公开(公告)日：2005-12-08

申请号：US10524270

申请日：2003-07-30

申请人： Yasushi Itoh ,  Sadamu Ishidu ,  Yasushi Tsuzuki

发明人： Yasushi Itoh ,  Sadamu Ishidu ,  Yasushi Tsuzuki

IPC分类号： H05B3/20 ,  C04B35/581 ,  C04B35/638 ,  C04B35/64 ,  H01L23/13 ,  H05B3/10 ,  H05B3/14 ,  H05B3/16 ,  C04B33/32

CPC分类号： C04B35/638 ,  B32B2311/08 ,  C04B35/581 ,  C04B35/62655 ,  C04B35/6303 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3241 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3865 ,  C04B2235/3895 ,  C04B2235/5436 ,  C04B2235/6021 ,  C04B2235/6025 ,  C04B2235/656 ,  C04B2235/668 ,  C04B2235/94 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2235/9638 ,  C04B2237/408 ,  H05B3/141

摘要： Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substrate 1 has a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 μm/mm or more and less than 2 μm/mm, and a local waviness height of 0 μm or more and 100 μm or less.

摘要翻译： 与现有技术相比，具有较大面积和较小厚度的氮化铝烧结体，其中氮化铝烧结体具有平坦度，具有控制的翘曲和/或波纹高度。 还提供了这种烧结体的制造方法以及使用这种烧结体的金属化基板和加热器。 氮化铝基板1的最大长度为320mm以上，厚度大于0mm且2mm以下，翘曲为0mum / mm以上且小于2mum / mm，局部波纹高度 0um以上且100μm以下。

公开(公告)号：US20140124700A1

公开(公告)日：2014-05-08

申请号：US14152288

申请日：2014-01-10

申请人： Takehisa Yamamoto ,  Sadamu Ishidu

发明人： Takehisa Yamamoto ,  Sadamu Ishidu

IPC分类号： H01L23/373

CPC分类号： H01L23/3731 ,  C04B35/581 ,  C04B35/638 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/3865 ,  C04B2235/3895 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6021 ,  C04B2235/606 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2235/9638 ,  H01L2924/0002 ,  H01L2924/00

摘要： An AlN substrate with excellent heat transfer efficiency between it and another member to be bonded to a bonding surface of the AlN substrate. The AlN substrate is composed of an AlN sintered body containing group 2A and 3A elements, and the surface roughness Ra of the bonding surface is 3 nm or less, and, in voids having long diameters of 0.25 μm or more, the mean value is 1.5 μm or less, and the maximum value is 1.8 μm or less. A method for producing the AlN substrate includes sintering a precursor formed of a sintering material that contains 88.7 to 98.5 mass % with respect to AlN, 0.01 to 0.3 mass % with respect to a group 2A element in oxide equivalent, and 0.05 to 5 mass % with respect to a group 3A element in oxide equivalent to form a sintered body, and applying HIP treatment onto the sintered body.

摘要翻译： 一种AlN衬底，其与其与AlN衬底的接合表面的另一个构件之间具有优异的传热效率。 AlN基板由含有2A族和3A族元素的AlN烧结体构成，接合面的表面粗糙度Ra为3nm以下，在长径为0.25μm以上的空隙中，平均值为1.5 μm以下，最大值为1.8μm以下。 一种AlN基板的制造方法，其特征在于，将相对于AlN含有88.7〜98.5质量％的烧结材料，相对于氧化铝当量的2A元素为0.01〜0.3质量％，0.05〜5质量％ 相对于形成烧结体的氧化物3A族元素，对烧结体进行HIP处理。