公开(公告)号：US09142717B2

公开(公告)日：2015-09-22

申请号：US13206700

申请日：2011-08-10

申请人： Koichi Tachibana ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L33/12 ,  B82Y20/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.

摘要翻译： 根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。 基础层包括氮化物半导体。 基础层的位错密度不大于5×108cm-2。 第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。 发光部分设置在第一半导体层上。 发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。 阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。 具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

公开(公告)号：US08461606B2

公开(公告)日：2013-06-11

申请号：US12875822

申请日：2010-09-03

申请人： Shigeya Kimura ,  Hajime Nago ,  Toshiyuki Oka ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

发明人： Shigeya Kimura ,  Hajime Nago ,  Toshiyuki Oka ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3216 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.

公开(公告)号：US08455917B2

公开(公告)日：2013-06-04

申请号：US13221456

申请日：2011-08-30

申请人： Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L29/66

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.

摘要翻译： 根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。 在第一包层上形成有源层，并且包括含In氮化物半导体。 在有源层上形成GaN层。 第一AlGaN层形成在GaN层上，并具有第一Al组成比。 在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组成比的第二Al组成比，并且含有比GaN层和第一AlGaN层更大量的Mg。 第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。

公开(公告)号：US20120153253A1

公开(公告)日：2012-06-21

申请号：US13218827

申请日：2011-08-26

申请人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

公开(公告)号：US08835901B2

公开(公告)日：2014-09-16

申请号：US13030440

申请日：2011-02-18

申请人： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/04 ,  H01L33/12

CPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。 发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。 多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。 第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。 第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。

公开(公告)号：US08698192B2

公开(公告)日：2014-04-15

申请号：US13198105

申请日：2011-08-04

申请人： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/26

CPC分类号： H01L33/325 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/32341

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分和p侧电极。 发光部分设置在n型和p型半导体层之间，并且包括多个势垒层和多个阱层。 p侧电极与p型半导体层接触。 p型半导体层包括第一，第二，第三和第四p型层。 第一p型层与p侧电极接触。 第二p型层与发光部接触。 第三p型层设置在第一p型层和第二p型层之间。 第四p型层设置在第二p型层和第三p型层之间。 第二p型层含有Al并含有比第一浓度低的浓度的p型杂质。

公开(公告)号：US20130087761A1

公开(公告)日：2013-04-11

申请号：US13405565

申请日：2012-02-27

申请人： Shigeya KIMURA ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Shigeya KIMURA ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3408 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containingIII group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

公开(公告)号：US20120138889A1

公开(公告)日：2012-06-07

申请号：US13198105

申请日：2011-08-04

申请人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/325 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/32341

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分和p侧电极。 发光部分设置在n型和p型半导体层之间，并且包括多个势垒层和多个阱层。 p侧电极与p型半导体层接触。 p型半导体层包括第一，第二，第三和第四p型层。 第一p型层与p侧电极接触。 第二p型层与发光部接触。 第三p型层设置在第一p型层和第二p型层之间。 第四p型层设置在第二p型层和第三p型层之间。 第二p型层含有Al并含有比第一浓度低的浓度的p型杂质。

公开(公告)号：US20110198561A1

公开(公告)日：2011-08-18

申请号：US12874510

申请日：2010-09-02

申请人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。 半导体层包括氮化物半导体。 发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。 第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。 第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。 中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0＆nlE; z1 <1）。

公开(公告)号：US20120056220A1

公开(公告)日：2012-03-08

申请号：US13226045

申请日：2011-09-06

申请人： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/60

CPC分类号： H01L33/007 ,  H01L33/46

摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

摘要翻译： 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。