Thin film photovoltaic device
    11.
    发明授权
    Thin film photovoltaic device 有权
    薄膜光伏器件

    公开(公告)号:US08334454B2

    公开(公告)日:2012-12-18

    申请号:US12928092

    申请日:2010-12-03

    IPC分类号: H01L31/0224 H01L31/042

    摘要: The present invention provides a thin film photovoltaic device and a method of forming a thin film photovoltaic device. The thin film photovoltaic device has a substrate, a thin film layer formed on the substrate and first and second electrodes formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film. Upon exposure to light, the thin film layer converts light energy into electricity. According to the method, a thin film layer is formed on a substrate. A first electrode and a second electrode are formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film.

    摘要翻译: 本发明提供薄膜光伏器件和形成薄膜光伏器件的方法。 薄膜光电器件具有基板,形成在基板上的薄膜层和形成在薄膜层的一侧上的第一和第二电极。 通过在第一和第二电极上施加电场,薄膜层在平行于膜的表面平面的方向上被极化。 在曝光时,薄膜层将光能转换成电能。 根据该方法,在基板上形成薄膜层。 第一电极和第二电极形成在薄膜层的一侧上。 通过在第一和第二电极上施加电场,薄膜层在平行于膜的表面平面的方向上被极化。

    Miniaturized piezoelectric accelerometers
    12.
    发明授权
    Miniaturized piezoelectric accelerometers 有权
    小型化压电加速度计

    公开(公告)号:US08833165B2

    公开(公告)日:2014-09-16

    申请号:US13202091

    申请日:2009-09-04

    IPC分类号: G01P15/09 G01P15/18 G01P15/08

    摘要: The miniaturized piezoelectric accelerometer includes a support frame (102) having a cavity (104) and a seismic mass (108) supported by a plurality of suspension beams (110) extending from the support frame (102). Each of the suspension beams (110) has a piezoelectric thin film coated on a top surface thereof, with a pair of inter-digital electrodes (114) deposited on an upper surface of each piezoelectric thin film. The presence of acceleration excites bending and thus strain in the piezoelectric thin film, which in turn causes electrical signals to be generated over terminals of the electrodes (114). To collect constructively the output of the electrodes (114), one terminal of each of the electrodes (114) is routed to and electrically connected at a top surface (308) of the seismic mass (108).

    摘要翻译: 小型压电加速度计包括具有空腔(104)的支撑框架(102)和由从支撑框架(102)延伸的多个悬挂梁(110)支撑的地震块体(108)。 每个悬架梁(110)具有涂覆在其顶表面上的压电薄膜,其中沉积在每个压电薄膜的上表面上的一对数字间电极(114)。 加速度的存在激发弯曲并因此在压电薄膜中变形,这又导致在电极(114)的端子上产生电信号。 为了积累地收集电极(114)的输出,每个电极(114)的一个端子被路由到电气连接在地震质量块(108)的顶表面(308)处。

    PHOTOVOLTAIC UV DETECTOR
    13.
    发明申请
    PHOTOVOLTAIC UV DETECTOR 审中-公开
    紫外线检测器

    公开(公告)号:US20130026382A1

    公开(公告)日:2013-01-31

    申请号:US13639504

    申请日:2011-04-12

    CPC分类号: H01L31/022466 H01L31/108

    摘要: A photovoltaic UV detector configured to generate an electrical output under UV irradiation. The photovoltaic UV detector comprises a first layer comprising an electrically polarized dielectric thin layer configured to generate a first electrical output under the UV irradiation; and a second, layer configured to form an electrical energy barrier at an interface between the second layer and the first layer so as to generate a second electrical output under the UV irradiation, the second electrical output having a same polarity as the first electrical output, the electrical output of the photovoltaic UV detector being a sum of at least the first electrical output and the second electrical output. The electrically polarized dielectric thin layer may be a ferroelectric thin film, which may comprise PZT or PZLT. The second layer may be a metal and the electrical energy barrier may be a Schottky barrier.

    摘要翻译: 一种光伏紫外检测器,被配置为在UV照射下产生电输出。 光伏UV检测器包括第一层,其包括被配置为在UV照射下产生第一电输出的电极化电介质薄层; 以及第二层,被配置为在所述第二层和所述第一层之间的界面处形成电能势垒,以在所述UV照射下产生第二电输出,所述第二电输出具有与所述第一电输出相同的极性, 光伏UV检测器的电输出是至少第一电输出和第二电输出的和。 电极化电介质薄层可以是铁电薄膜,其可以包括PZT或PZLT。 第二层可以是金属,并且电能势垒可以是肖特基势垒。

    Ferroelectric Poly (Vinylidene Fluoride) Film on a Substrate and Method for its Formation
    15.
    发明申请
    Ferroelectric Poly (Vinylidene Fluoride) Film on a Substrate and Method for its Formation 审中-公开
    基板上的铁电聚(亚乙烯基氟化物)膜及其形成方法

    公开(公告)号:US20090263671A1

    公开(公告)日:2009-10-22

    申请号:US12106685

    申请日:2008-04-21

    IPC分类号: B32B15/082 B05D3/02

    摘要: Ferroelectric Poly(vinylidene fluoride) Film on a Substrate and Method for its Formation A method of producing a poly(vinylidene fluoride) (“PVDF”) film on a substrate from a precursor solution is disclosed. The method comprises preparing the precursor solution for the PVDF film and dissolving an additive in the precursor solution, the additive being selected from the group consisting of: a hydrate salt, and a hygroscopic chemical. The PVDF is added to the precursor solution. The PVDF solution is coated on a substrate to form an as-deposited PVDF film which is dried and crystallized at an elevated temperature. The dried and crystallized as-deposited PVDF film is annealed at a further elevated temperature. The further elevated temperature is greater than the elevated temperature but less than a melting point of the as-deposited PVDF film. The additive dehydrates at the further elevated temperature. A corresponding product is also disclosed.

    摘要翻译: 基板上的铁电性聚(偏二氟乙烯)膜及其形成方法公开了从前体溶液在基材上制备聚(偏二氟乙烯)(“PVDF”)膜的方法。 该方法包括制备用于PVDF膜的前体溶液并将添加剂溶解在前体溶液中,添加剂选自:水合物盐和吸湿性化合物。 将PVDF加入到前体溶液中。 将PVDF溶液涂覆在基材上以形成沉积的PVDF膜,其在高温下干燥并结晶。 干燥并结晶沉积的PVDF膜在进一步升高的温度下退火。 进一步升高的温度大于升高的温度但小于沉积的PVDF膜的熔点。 添加剂在进一步升高的温度下脱水。 还公开了相应的产品。

    Power supply device and system
    19.
    发明授权
    Power supply device and system 有权
    电源设备和系统

    公开(公告)号:US08253390B2

    公开(公告)日:2012-08-28

    申请号:US12438121

    申请日:2007-08-22

    申请人: Kui Yao Yee Yuan Tan

    发明人: Kui Yao Yee Yuan Tan

    IPC分类号: H01M10/46

    摘要: A power supply device and system have an electrically polarized element in which a remnant electrical polarization is formed and retained. Electrodes are formed on the electrically polarized elements and the remnant electrical polarization generates an electrical potential on the electrodes. Electrical circuits are coupled to the electrically polarized element to control the external electric charges attracted and distributed on the electrodes, for establishing the electrical potential on the electrodes. The electrodes can output electric currents by controlling the external electric charges distribution. The electrically polarized element may be made of ferroelectric material, including a ferroelectric bulk ceramic, ferroelectric multilayer ceramic, ferroelectric single crystal, ferroelectric thin film, ferroelectric thick film and ferroelectric polymer, and all the other materials with electric polarization retained therein. Power supply devices and systems made according to the present invention have very long standby time, small in size and efficient for many applications including RF systems.

    摘要翻译: 电源装置和系统具有形成并保持残余电极化的电极化元件。 电极形成在电极化元件上,剩余的电极化在电极上产生电位。 电路耦合到电极化元件以控制吸引并分布在电极上的外部电荷,以在电极上建立电位。 电极可以通过控制外部电荷分布来输出电流。 电极化元件可以由铁电体块陶瓷,铁电多层陶瓷,铁电单晶,铁电薄膜,铁电厚膜和铁电聚合物等铁电体材料,以及其中保留有电极化性的所有其他材料制成。 根据本发明制造的电源设备和系统具有非常长的待机时间,尺寸小,并且对于包括RF系统的许多应用来说是有效的。

    Method of forming a VDF oligomer or co-oligomer film on a substrate and an electrical device comprising the VDF oligomer or co-oligomer film on the substrate
    20.
    发明授权
    Method of forming a VDF oligomer or co-oligomer film on a substrate and an electrical device comprising the VDF oligomer or co-oligomer film on the substrate 有权
    在基板上形成VDF低聚物或共低聚物膜的方法以及在基板上包括VDF低聚物或共低聚物膜的电气装置

    公开(公告)号:US09058934B2

    公开(公告)日:2015-06-16

    申请号:US13518866

    申请日:2009-12-23

    摘要: A method of forming a vinylidene fluoride (VDF) oligomer or co-oligomer film on a substrate is disclosed. The method comprises forming a VDF oligomer or co-oligomer precursor solution; depositing the VDF oligomer or co-oligomer precursor solution onto the substrate to form a preliminary VDF oligomer or co-oligomer film on the substrate; and applying uniaxial pressure on the preliminary VDF oligomer or co-oligomer film and the substrate at an elevated temperature to form the VDF oligomer or co-oligomer film on the substrate. The substrate may comprise a metal surface which may be used as a bottom electrode and a top electrode may be deposited on the VDF oligomer or co-oligomer film. The VDF oligomer or co-oligomer film, the bottom electrode on the substrate and the top electrode on the VDF oligomer or co-oligomer film form an electrical device.

    摘要翻译: 公开了一种在衬底上形成偏二氟乙烯(VDF)低聚物或共低聚物膜的方法。 该方法包括形成VDF低聚物或共低聚物前体溶液; 将VDF低聚物或共聚低聚物前体溶液沉积到衬底上以在衬底上形成预备的VDF低聚物或共低聚物膜; 并在升高的温度下对预备的VDF低聚物或共低聚物膜和基底施加单轴压力,以在基底上形成VDF低聚物或共低聚物膜。 衬底可以包括可以用作底部电极的金属表面,并且顶部电极可以沉积在VDF低聚物或共聚低聚物膜上。 VDF低聚物或共低聚物膜,基底上的底部电极和VDF低聚物或共低聚物膜上的顶部电极形成电气装置。