公开(公告)号：US06583477B1

公开(公告)日：2003-06-24

申请号：US10121981

申请日：2002-04-12

申请人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

发明人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC分类号： H01L2906

CPC分类号： H01J29/96 ,  H01J1/46 ,  H01J3/021 ,  H01J29/02 ,  H01J29/467 ,  H01J31/127 ,  H01J2329/92 ,  H01L27/12 ,  H01L29/78669

摘要： The present invention provides a field emission device driven with a high voltage. The field emission device of the present invention includes a resistor connected between a gate electrode and an external terminal to prevent a leakage current by an electrical connection between the gate electrode and the emitter. Therefore, the power consumption of the device is decreased and the operating characteristic of the device is improved.

摘要翻译： 本发明提供一种利用高电压驱动的场致发射器件。 本发明的场致发射器件包括连接在栅电极和外部端子之间的电阻器，以通过栅电极和发射极之间的电连接来防止漏电流。 因此，降低了设备的功耗，提高了设备​​的工作特性。

公开(公告)号：US06261145B1

公开(公告)日：2001-07-17

申请号：US09199385

申请日：1998-11-25

申请人： Jin Ho Lee ,  Ju Youn Cha ,  Kyoung Soo Suh ,  Kyoung Ik Cho

发明人： Jin Ho Lee ,  Ju Youn Cha ,  Kyoung Soo Suh ,  Kyoung Ik Cho

IPC分类号： H01J926

CPC分类号： H01J9/40 ,  H01J9/261 ,  H01J2329/00

摘要： The present invention relates to a method of packaging a field emission display. The method of packaging a field emission display, comprising the steps of: forming an opening on a selected area of a lower substrate on which field emission elements are formed and forming a silicon layer on a lower surface of said lower substrate; combining a upper substrate, on which a transparent electrode and luminescent material are formed, and said lower substrate by a lateral wall; placing a cap on said opening after performing a vacuum process through said opening; performing a thermal treatment process so that said cap is combined with said silicon layer by silicide created by the reaction of said cap and said silicon layer, thereby sealing said opening; and completely sealing said opening by adhesives.

摘要翻译： 本发明涉及一种封装场发射显示器的方法。 一种场发射显示器的封装方法，包括以下步骤：在其上形成有场发射元件的下基板的选定区域上形成开口，并在所述下基板的下表面上形成硅层; 在其上形成透明电极和发光材料的上基板和所述下基板通过侧壁结合; 在通过所述开口执行真空处理之后，在所述开口上放置盖子; 执行热处理工艺，使得所述盖通过由所述盖和所述硅层的反应产生的硅化物与所述硅层组合，从而密封所述开口; 并通过粘合剂完全密封所述开口。

公开(公告)号：US6137219A

公开(公告)日：2000-10-24

申请号：US122823

申请日：1998-07-27

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC分类号： H01J1/30 ,  G09G3/22 ,  H01J31/12

CPC分类号： G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/304 ,  H01J2201/319

摘要： A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

摘要翻译： 公开了具有n沟道高电压薄膜晶体管的场致发射显示器。 根据本发明，通过每个像素附着的nHVTFT控制用于驱动像素的信号，因此，行和列驱动器的信号电压被极大地降低。 结果，可以实现能够以低功耗，低驱动电压提供高质量图像并且制造成本低廉的场致发射显示器，并且防止使用nHVTFT的线路串扰。 通过使用锥形发射极尖端下方的圆柱形电阻体，本发明提供了具有优异的发射电流的可配置性和稳定性以及动态驱动能力的场致发射显示器。

公开(公告)号：US08493768B2

公开(公告)日：2013-07-23

申请号：US13300688

申请日：2011-11-21

申请人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

发明人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

摘要翻译： 提供一种存储单元，包括：铁电晶体管; 电连接到所述铁电晶体管的多个开关元件; 以及多个控制线，用于将各个控制信号发送到多个开关元件中的每一个，用于分别控制多个开关元件。 多个开关元件被配置为基于各个控制信号单独控制，以防止铁电晶体管的每个电极浮动。

公开(公告)号：US20120225500A1

公开(公告)日：2012-09-06

申请号：US13469558

申请日：2012-05-11

申请人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L51/40

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US08198625B2

公开(公告)日：2012-06-12

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L35/24

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20110266542A1

公开(公告)日：2011-11-03

申请号：US13094933

申请日：2011-04-27

申请人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

发明人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L29/78648

摘要： Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.

摘要翻译： 提供一种包括双栅晶体管的半导体器件及其制造方法。 半导体器件包括下栅极电极，下栅电极上的上栅电极，插入在下栅电极和上栅电极之间的接触插塞，并将下栅电极连接到上栅电极，功能电极 与上栅电极间隔开并形成与上栅电极相同的高度。 表现出高场效应迁移率的双栅极晶体管被施加到半导体器件，从而可以提高半导体器件的特性。 特别是，由于不需要附加的掩模或沉积工艺，所以大面积的高分辨率半导体器件既可以增加工艺成本也不会降低产量。

公开(公告)号：US20110133257A1

公开(公告)日：2011-06-09

申请号：US12782303

申请日：2010-05-18

申请人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

发明人： Jae Bon KOO ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

公开(公告)号：US07943995B2

公开(公告)日：2011-05-17

申请号：US12068161

申请日：2008-02-04

申请人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

发明人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/66242 ,  H01L21/84 ,  H01L27/1203

摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

摘要翻译： 提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。 在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。 特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。 此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

公开(公告)号：US06975796B2

公开(公告)日：2005-12-13

申请号：US10749145

申请日：2003-12-31

申请人： Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

发明人： Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

IPC分类号： G02B26/00 ,  G02B6/34 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/16 ,  G02B6/26 ,  H01S3/082 ,  H01S3/30

CPC分类号： G02B6/29319 ,  G02B6/02076 ,  G02B6/278 ,  G02B6/29322 ,  H01S3/0675 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/1608

摘要： The present invention relates to a millimeter wave frequency band optical oscillator used for an oscillating frequency signal source of millimeter waves transmitted from a repeater to a wireless subscriber in a millimeter wave wireless subscriber communication system for a next-generation (i.e., 5th generation or less) very high speed wireless internet service, wherein a loop mirror and a pair of optical fiber grating mirrors are used. A wavelength fixed type and a wavelength tunable type optical fiber grating mirrors are connected in a serial manner to constitute a dual laser mode resonator capable of simultaneously oscillating two laser modes, which are appropriate to each wavelength. Therefore, it is possible to obtain a laser light source capable of an extremely high frequency (60 GHz or more) modulation by using beat phenomena between two laser modes.

摘要翻译： 本发明涉及一种毫米波频带光学振荡器，用于在下一代的毫米波无线用户通信系统（即，第5代或更少）中从中继器向无线用户发射的毫米波的振荡频率信号源 ）非常高速的无线互联网服务，其中使用环形镜和一对光纤光栅镜。 波长固定型和波长可调型光纤光栅镜以串联方式连接，构成能够同时振荡两种激光模式的双激光模式谐振器，这两种激光模式适合于每种波长。 因此，可以通过使用两种激光模式之间的拍子现象来获得能够进行极高频率（60GHz以上）调制的激光光源。