公开(公告)号：US09778083B2

公开(公告)日：2017-10-03

申请号：US13896108

申请日：2013-05-16

Applicant: Lam Research Corporation

Inventor： Evangelos Spyropoulos ,  Iqbal Shareef

IPC: G01F25/00 ,  G01F1/34

CPC classification number: G01F1/34 ,  B01J2219/00216 ,  G01F25/0007 ,  G01F25/0038 ,  G01F25/0092

Abstract: A method of calculating a transient flow rate of a flowed process gas comprises flowing process gas through a mass flow controller into a chamber of known volume and measuring successive data sample points which include pressure data, temperature data, and a time value for each successive data sample point. Groups of successive data sample points are identified wherein each group shares one or more successive data sample points with another group, and ratio values are calculated for each of the successive data sample points wherein each ratio value is a ratio between the pressure data and a product of temperature and gas compressibility data for each respective time value. A line of best fit of the ratio values is determined within at least one group, and then the transient flow rate of the flowed process gas is calculated using a pressure rate of rise technique wherein the pressure rate of rise technique utilizes a ratio value determined from the line of best fit for at least one time value within the at least one group.

公开(公告)号：US20160076989A1

公开(公告)日：2016-03-17

申请号：US14489148

申请日：2014-09-17

Applicant: Lam Research Corporation

Inventor： Mark Taskar ,  Iqbal Shareef ,  Anthony Zemlock

IPC: G01N17/00 ,  H01L21/66

CPC classification number: H01L22/10 ,  H01L21/67017

Abstract: A corrosion sensor retainer assembly and method for predicting and detecting corrosion within a gas delivery system of a semiconductor substrate processing apparatus. The corrosion sensor retainer assembly comprises a laminate that includes a first insulating layer with a first port and a second insulating layer with a second port, wherein the first port and the second port are configured to retain a seal. The corrosion sensor retainer assembly includes a conductor housed within the laminate. The conductor forms a path that extends around the first port and the second port. At least a portion of the conductor has an exposed surface with a property that changes in the presence of corrosive gas or acid.

Abstract translation: 一种用于预测和检测半导体衬底处理装置的气体输送系统内的腐蚀的腐蚀传感器保持器组件和方法。 腐蚀传感器保持器组件包括层压体，其包括具有第一端口的第一绝缘层和具有第二端口的第二绝缘层，其中第一端口和第二端口构造成保持密封。 腐蚀传感器保持器组件包括容纳在层压板内的导体。 导体形成围绕第一端口和第二端口延伸的路径。 导体的至少一部分具有暴露的表面，其具有在存在腐蚀性气体或酸的情况下改变的性质。

公开(公告)号：US20150303035A1

公开(公告)日：2015-10-22

申请号：US14753738

申请日：2015-06-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Iqbal Shareef ,  Mark Taskar ,  Evangelos Spyropoulos

IPC: H01J37/32 ,  C23C16/513 ,  H01L21/67

CPC classification number: H01J37/32449 ,  C23C16/45561 ,  C23C16/513 ,  G05D7/06 ,  G05D7/0658 ,  G05D11/132 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069 ,  Y10T137/0324 ,  Y10T137/7722

Abstract: A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time.

Abstract translation: 用于向处理室提供多个处理气体的气体供应系统包括多个质量流量控制器，每个质量流量控制器被布置成接收多个处理气体的相应子集。 各个子集中的每一个包括多于一个的处理气体，并且至少一个处理气体被提供给多个质量流量控制器中的一个以上。 各个阀布置在多个质量流量控制器中的每一个的上游，以选择性地向质量流量控制器提供相应的子集。 多个质量流量控制器的第一数量少于要供应到处理室的多个处理气体的总数。 第一数量等于在任何一个时间在处理室中使用的多种处理气体的最大数量。

公开(公告)号：US20150287573A1

公开(公告)日：2015-10-08

申请号：US14680244

申请日：2015-04-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Mark Taskar ,  Iqbal Shareef

IPC: H01J37/32 ,  B01F15/02 ,  B01F3/02

CPC classification number: H01J37/3244 ,  B01F3/02 ,  B01F5/048 ,  Y10T29/49826

Abstract: A gas delivery apparatus for supplying process gas to a processing chamber of a plasma processing apparatus includes a mixing manifold having a plurality of gas inlets on a surface thereof, the gas inlets being equally spaced from a center mixing point of the mixing manifold; and optionally a plurality of gas supplies in communication with the plurality of gas inlets on the surface of the mixing manifold. A method of supplying gas to a processing chamber of a plasma processing apparatus using such a gas delivery apparatus involves providing a plurality of gas supplies in communication with a plurality of gas inlets on a surface of a mixing manifold; flowing at least two different gases from the plurality of gas supplies to the mixing manifold to create a first mixed gas; and supplying the first mixed gas to a plasma processing chamber coupled downstream of the mixing manifold.

Abstract translation: 用于将处理气体供给到等离子体处理装置的处理室的气体输送装置包括：混合歧管，其表面上具有多个气体入口，气体入口与混合歧管的中心混合点等间隔; 以及可选地与混合歧管表面上的多个气体入口连通的多个气体供应源。 使用这种气体输送装置向等离子体处理装置的处理室供给气体的方法包括提供与混合歧管的表面上的多个气体入口连通的多个气体供给装置; 将来自所述多个气体供应的至少两种不同气体流动到所述混合歧管以产生第一混合气体; 以及将第一混合气体供应到耦合在混合歧管下游的等离子体处理室。

公开(公告)号：US09580360B2

公开(公告)日：2017-02-28

申请号：US14676180

申请日：2015-04-01

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Iqbal Shareef ,  Mike Ingamells

IPC: C04B35/622 ,  H01J37/32 ,  C04B35/66 ,  C04B35/64 ,  B28B1/00 ,  B32B18/00 ,  C04B35/00 ,  C23C16/455 ,  B33Y10/00 ,  B33Y30/00

CPC classification number: C04B35/622 ,  B28B1/001 ,  B32B18/00 ,  B33Y10/00 ,  B33Y30/00 ,  C04B35/00 ,  C04B35/01 ,  C04B35/111 ,  C04B35/14 ,  C04B35/46 ,  C04B35/486 ,  C04B35/50 ,  C04B35/515 ,  C04B35/563 ,  C04B35/565 ,  C04B35/581 ,  C04B35/584 ,  C04B35/64 ,  C04B35/66 ,  C23C16/45561 ,  C23C16/45563 ,  H01J37/3244

Abstract: A method of making a monolithic ceramic component of a gas delivery system of a semiconductor substrate processing apparatus wherein the gas delivery system is configured to supply process gas to a gas distribution member disposed downstream thereof. The gas distribution member is configured to supply the process gas to a processing region of a vacuum chamber of the apparatus, wherein the processing region is disposed above an upper surface of a semiconductor substrate to be processed. The method comprises preparing a green compact of ceramic material. The green compact of ceramic material is formed into a form of a desired monolithic ceramic component of the gas delivery system. The formed green compact of ceramic material is fired to form the monolithic ceramic component of the gas delivery system.

Abstract translation: 一种制造半导体基板处理装置的气体输送系统的整体式陶瓷部件的方法，其中所述气体输送系统构造成将处理气体供给到设置在其下游的气体分配部件。 气体分配构件被配置为将处理气体供应到设备的真空室的处理区域，其中处理区域设置在待处理的半导体衬底的上表面上方。 该方法包括制备陶瓷材料的压坯。 陶瓷材料的生坯被形成为气体输送系统所需的整体式陶瓷部件的形式。 将形成的陶瓷材料的压坯烧成以形成气体输送系统的整体式陶瓷部件。

公开(公告)号：US20150155187A1

公开(公告)日：2015-06-04

申请号：US14097108

申请日：2013-12-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Iqbal Shareef ,  Piyush Agarwal ,  Jason Augustino ,  Andreas Fischer

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/6719 ,  Y10T137/0318 ,  Y10T137/86083

Abstract: A system and method for processing a substrate in a processing chamber and providing an azimuthally evenly distributed draw on the processing byproducts using a gas pump down source coupled to the processing chamber above the plane of a substrate support within the processing chamber. The process chamber can include an annular plenum disposed between the support surface plane and the chamber top, the plenum including at least one vacuum inlet port coupled to the gas pump down source and a continuous inlet gap proximate to a perimeter of the substrate support, the continuous inlet gap having an inlet gas flow resistance of between about twice and about twenty times an outlet gas flow resistance the at least one vacuum inlet port.

Abstract translation: 一种用于处理处理室中的衬底的系统和方法，并且使用在所述处理室内的衬底支撑体的平面上方连接到所述处理室的气体抽吸源在加工副产物上提供方位均匀分布的抽吸。 处理室可以包括设置在支撑表面平面和室顶部之间的环形增压室，气室包括连接到气体泵下降源的至少一个真空入口端口和靠近衬底支撑件的周边的连续入口间隙， 连续入口间隙具有入口气体流动阻力为至少一个真空入口的出口气体流动阻力的约两倍至约二十倍的连续入口间隙。

公开(公告)号：US20150068613A1

公开(公告)日：2015-03-12

申请号：US14025162

申请日：2013-09-12

Applicant: Lam Research Corporation

Inventor： Mark Taskar ,  Iqbal Shareef

IPC: G05D11/13 ,  G05D7/06

CPC classification number: G05D7/0641 ,  F16K27/003 ,  G05D7/0652 ,  Y10T137/2499

Abstract: A multi-line mass flow device configured for controlled delivery of two or more fluids into a process chamber. The multi-line mass flow device comprises a cluster mass flow control manifold and a multi-inlet manifold. The cluster mass flow control manifold comprises a controller, a gas manifold mounting block, and two or more gas flow control stations. The multi-inlet manifold comprises a multi-inlet mounting block, and two or more isolation valves mounted on the multi-inlet mounting block.

Abstract translation: 多线质量流量装置，被配置为将两种或多种流体控制输送到处理室中。 多线质量流量装置包括集束质量流量控制歧管和多入口歧管。 集群质量流量控制歧管包括控制器，气体歧管安装块和两个或更多个气体流量控制站。 多入口歧管包括多入口安装块和安装在多入口安装块上的两个或更多隔离阀。

公开(公告)号：US20140182689A1

公开(公告)日：2014-07-03

申请号：US13732054

申请日：2012-12-31

Applicant: LAM RESEARCH CORPORATION

Inventor： Iqbal Shareef ,  Mark Taskar ,  Evangelos Spyropoulos

IPC: H01L21/67

CPC classification number: H01J37/32449 ,  C23C16/45561 ,  C23C16/513 ,  G05D7/06 ,  G05D7/0658 ,  G05D11/132 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069 ,  Y10T137/0324 ,  Y10T137/7722

Abstract: A gas supply subsystem for providing a set of process gases to a substrate processing chamber, the set of process gases being a subset of a plurality of process gases available to the substrate processing chamber. The gas supply subsystem has fewer multi-gas mass flow controllers than the number of available process gases, wherein multiple process gases are multiplexed at the input of one or more of the multi-gas mass flow controllers. Pump-purge may be employed to improve gas switching speed for the multi-gas mass flow controllers

Abstract translation: 一种用于向衬底处理室提供一组工艺气体的气体供应子系统，该组工艺气体是可用于衬底处理室的多个工艺气体的子集。 气体供应子系统具有比可用的工艺气体的数量少的多气体质量流量控制器，其中多个处理气体在多个气体质量流量控制器的一个或多个的输入处被多路复用。 可以采用泵清洗来提高多气体质量流量控制器的气体切换速度