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    THERMAL ATOMIC LAYER ETCH WITH RAPID TEMPERATURE CYCLING
    1.
    发明申请
    THERMAL ATOMIC LAYER ETCH WITH RAPID TEMPERATURE CYCLING 有权

    公开(公告)号：US20220293431A1

    公开(公告)日：2022-09-15

    申请号：US17805081

    申请日：2022-06-02

    Applicant: Lam Research Corporation

    Inventor： Theodoros Panagopoulos ,  Andreas Fischer ,  Thorsten Lill

    IPC: H01L21/311 ,  H01L21/3213

    Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.

    Atomic layer etching using a combination of plasma and vapor treatments
    2.
    发明授权
    Atomic layer etching using a combination of plasma and vapor treatments 有权

    公开(公告)号：US10784118B2

    公开(公告)日：2020-09-22

    申请号：US16289428

    申请日：2019-02-28

    Applicant: Lam Research Corporation

    Inventor： Andreas Fischer ,  Thorsten Lill ,  Richard Janek ,  John Boniface

    IPC: C23C16/02 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

    Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

    Atomic layer etching methods and apparatus
    3.
    发明授权
    Atomic layer etching methods and apparatus 有权

    公开(公告)号：US10692724B2

    公开(公告)日：2020-06-23

    申请号：US15849306

    申请日：2017-12-20

    Applicant: Lam Research Corporation

    Inventor： David Smith ,  Thorsten Lill ,  Andreas Fischer

    IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/768 ,  H01L21/66

    Abstract: A method for performing atomic layer etching of a surface of a substrate is provided, including: performing a surface conversion operation by exposing the surface of the substrate to a surface conversion reactant; performing a ligand exchange operation by exposing the surface of the substrate to a ligand containing reactant; performing a desorption operation that effects removal of surface species from the surface of the substrate; performing a purge operation; repeating the surface conversion operation, the ligand exchange operation, the desorption operation, and the purge operation, for a predefined number of cycles.

    PREDICTING ETCH CHARACTERISTICS IN THERMAL ETCHING AND ATOMIC LAYER ETCHING
    4.
    发明申请
    PREDICTING ETCH CHARACTERISTICS IN THERMAL ETCHING AND ATOMIC LAYER ETCHING 审中-公开

    公开(公告)号：US20190340316A1

    公开(公告)日：2019-11-07

    申请号：US15970744

    申请日：2018-05-03

    Applicant: Lam Research Corporation

    Inventor： Thorsten Lill ,  Andreas Fischer ,  Ivan L. Berry, III ,  Nerissa Sue Draeger ,  Richard A. Gottscho

    IPC: G06F17/50 ,  G06N99/00

    Abstract: Etch in a thermal etch reaction is predicted using a machine learning model. Chemical characteristics of an etch process and associated energies in one or more reaction pathways of a given thermal etch reaction are identified using a quantum mechanical simulation. Labels indicative of etch characteristics may be associated with the chemical characteristics and associated energies of the given thermal etch reaction. The machine learning model can be trained using chemical characteristics and associated energies as independent variables and labels as dependent variables across many different etch reactions of different types. When chemical characteristics and associated energies for a new thermal etch reaction are provided as inputs in the machine learning model, the machine learning model can accurately predict etch characteristics of the new thermal etch reaction as outputs.

    Hybrid feature etching and bevel etching systems
    6.
    发明授权
    Hybrid feature etching and bevel etching systems 有权
    混合特征蚀刻和斜面蚀刻系统

    公开(公告)号：US09564285B2

    公开(公告)日：2017-02-07

    申请号：US13942502

    申请日：2013-07-15

    Applicant: Lam Research Corporation

    Inventor： Andreas Fischer ,  John Holland

    IPC: H01J37/32 ,  H01J37/00

    CPC classification number: H01J37/00 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32642 ,  H01L2221/00

    Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

    Abstract translation: 一种等离子体处理系统，至少具有用于对基板进行等离子体处理并利用至少第一处理状态和第二处理状态的等离子体处理室。 在第一处理过程期间，等离子体存在于衬底的中心区域之上，以在第一处理状态期间至少执行中心区域的等离子体处理。 在第二处理状态期间，等离子体不存在于基板的中心区域上方，但在斜边缘区域附近存在，以至少在第二处理状态期间执行斜面边缘区域的等离子体处理。 在第二处理状态期间，上电极处于RF浮置状态，并且衬底设置在下电极表面上。

    MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL
    7.
    发明申请
    MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL 有权
    减少水分上的硅化物形成

    公开(公告)号：US20130316547A1

    公开(公告)日：2013-11-28

    申请号：US13958391

    申请日：2013-08-02

    Applicant: Lam Research Corporation

    Inventor： Andreas Fischer ,  William Scott Bass

    IPC: H01L21/02

    CPC classification number: H01L21/02274 ,  H01L21/28097 ,  H01L21/28518 ,  H01L29/517

    Abstract: A method for processing a wafer with a wafer bevel that surrounds a central region is provided. The wafer is placed in a bevel plasma processing chamber. A protective layer is deposited on the wafer bevel without depositing the protective layer over the central region. The wafer is removed from the bevel plasma processing chamber. The wafer is further processed.

    Abstract translation: 提供了一种用于处理具有围绕中心区域的晶片斜面的晶片的方法。 将晶片放置在斜面等离子体处理室中。 保护层沉积在晶片斜面上，而不在中心区域上沉积保护层。 从斜面等离子体处理室移除晶片。 晶片进一步处理。

    Thermal atomic layer etch with rapid temperature cycling
    10.
    发明授权
    Thermal atomic layer etch with rapid temperature cycling 有权

    公开(公告)号：US11380556B2

    公开(公告)日：2022-07-05

    申请号：US17103519

    申请日：2020-11-24

    Applicant: Lam Research Corporation

    Inventor： Theodoros Panagopoulos ,  Andreas Fischer ,  Thorsten Lill

    IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

    Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.

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