公开(公告)号：US20220384693A1

公开(公告)日：2022-12-01

申请号：US17446170

申请日：2021-08-27

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shiou-Yi KUO

IPC: H01L33/54

Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes a first insulation layer disposed on and covering the first surface and one part of the sidewalls. The light-emitting element further includes multiple connection pads physically contact the first surface and protruding from the first insulation layer, as well as a second insulation layer disposed on and covering the second surface and the other part of the sidewalls. The second insulation layer includes a cover portion and protrusion portions. The cover portion covers the whole second surface and the other part of the sidewalls. The protrusion portions are disposed on the sidewalls, protrude from the cover portion and extend laterally.

公开(公告)号：US20210328120A1

公开(公告)日：2021-10-21

申请号：US17078098

申请日：2020-10-23

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Jian-Chin LIANG ,  Jo-Hsiang CHEN ,  Chih-Hao LIN

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/00

Abstract: A light-emitting device includes a micro light-emitting diode chip (micro LED chip), a first electrical connecting layer, a second electrical connecting layer and a housing layer. The micro LED chip includes a light exit surface, a bottom surface opposite to the light exit surface and first and second electrodes located on the bottom surface. The first and second electrical connecting layers respectively connect to the first and second electrodes and extend along two opposite sidewalls to two sides of a perimeter of the light exit surface. The housing layer encloses the micro LED chip and the first and second electrical connecting layer. The light exit surface of the micro LED chip and top surfaces of the first and second electrical connecting layers are not enclosed by the housing layer.

公开(公告)号：US20200287104A1

公开(公告)日：2020-09-10

申请号：US16809531

申请日：2020-03-04

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Jian-Chin LIANG ,  Yu-Chun LEE ,  Fu-Hsin CHEN ,  Jo-Hsiang CHEN ,  Chien-Nan YEH

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/62

Abstract: A package includes a substrate and a plurality of light-emitting chips. The substrate has a top surface. The light-emitting chips are disposed on the top surface of the substrate, in which a sum of the vertical projection areas of the light-emitting chips on the top surface of the substrate is less than 5% of an area of the top surface of the substrate.

公开(公告)号：US20200227594A1

公开(公告)日：2020-07-16

申请号：US16744115

申请日：2020-01-15

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L33/40 ,  H01L33/10

Abstract: A light-emitting diode structure includes a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a reflective layer, and an ohmic contact layer. The light-emitting layer is disposed under the first type semiconductor layer. The second type semiconductor layer is disposed under the light-emitting layer, wherein the second type semiconductor layer includes a plurality of recesses which are recessed from a lower surface of the second type semiconductor layer toward the light-emitting layer. The reflective layer is disposed in the recesses. The ohmic contact layer is disposed under the lower surface of the second type semiconductor layer and surrounds the recesses. The light-emitting diode structure can increase the luminous efficiency greatly.

公开(公告)号：US20150115276A1

公开(公告)日：2015-04-30

申请号：US14290974

申请日：2014-05-29

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

Abstract: The disclosure provides a light-emitting diode which includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a reflective layer, a current blocking layer and a current spreading layer. The light-emitting layer is positioned on the first semiconductor layer, and the second semiconductor layer is positioned on the light-emitting layer. The reflective layer is positioned on a part of the second semiconductor layer, so as to expose another part of the second semiconductor layer. The current blocking layer covers the reflective layer, and the current spreading layer covers the exposed second semiconductor layer and current blocking layer.

Abstract translation: 本发明提供一种发光二极管，其包括第一半导体层，发光层，第二半导体层，反射层，电流阻挡层和电流扩展层。 发光层位于第一半导体层上，第二半导体层位于发光层上。 反射层位于第二半导体层的一部分上，以暴露第二半导体层的另一部分。 电流阻挡层覆盖反射层，电流扩展层覆盖暴露的第二半导体层和电流阻挡层。

公开(公告)号：US20240395986A1

公开(公告)日：2024-11-28

申请号：US18669141

申请日：2024-05-20

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Jian-Chin LIANG ,  Cheng-Hsien LI ,  Kai Hung CHENG

IPC: H01L33/58 ,  H01L25/075 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting element, a manufacturing method thereof, and a package structure are provided. The light-emitting element includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, and a convex lens structure disposed on the second semiconductor layer. The convex lens structure includes a plurality of microlenses. The microlenses and the second semiconductor layer are integrally formed and have the same material. The radius of curvature of one of the microlenses is 0.2 μm to 5.0 μm, and the light-emission angle of the light-emitting element is 100° to 110°.

公开(公告)号：US20240274764A1

公开(公告)日：2024-08-15

申请号：US18633496

申请日：2024-04-11

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shiou-Yi KUO

IPC: H01L33/54 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00

CPC classification number: H01L33/54 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/0093 ,  H01L33/0095 ,  H01L2933/005

Abstract: A light-emitting element includes light-emitting diode (LED) chip with a first and second surface opposite to each other, and sidewalls connecting the first and second surface. The light-emitting element further includes an insulation structure covering the first surface, the second surface, and the sidewalls. The light-emitting element further includes multiple connection pads disposed on the first surface. In a cross-sectional view, the insulation layer includes a plurality of protrusion portions disposed on the sidewalls. Each of the protrusion portions protrudes from the sidewalls and extends laterally with a protrusion length. The protrusion length of one of the plurality of protrusion portions is different from that of another one of the plurality of protrusion portions.

公开(公告)号：US20230057589A1

公开(公告)日：2023-02-23

申请号：US17662658

申请日：2022-05-10

Applicant: Lextar Electronics Corporation

Inventor： Jih-Kang CHEN ,  Shiou-Yi KUO ,  Guo-Yi SHIU

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/10

Abstract: A light-emitting diode chip includes a semiconductor layer, an insulating layer, a first and a second electrode. The semiconductor layer has a top side, a bottom side opposite to the top side and a sidewall connecting the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer. The insulating layer covers the sidewall and the bottom side of the semiconductor layer, and has a protruding portion extending and protruding above the concave-convex structure along a direction parallel to the sidewall. A vertical distance between a highest point of the concave-convex structure and that of the protruding portion is from 0.5 μm to four times the thickness of the semiconductor layer. The first and the second electrode are on the bottom side of the semiconductor layer and penetrate through the insulating layer. The second electrode is adjacent to the first electrode.

公开(公告)号：US20210257521A1

公开(公告)日：2021-08-19

申请号：US17308070

申请日：2021-05-05

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO

IPC: H01L33/48 ,  H01L33/52 ,  H01L29/06 ,  H01L21/02

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

公开(公告)号：US20210119096A1

公开(公告)日：2021-04-22

申请号：US17134549

申请日：2020-12-28

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L33/62 ,  H01L33/22 ,  H01L33/52 ,  H01L33/42

Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.