公开(公告)号：US20190385822A1

公开(公告)日：2019-12-19

申请号：US16011442

申请日：2018-06-18

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Leib Kozakevich ,  John Holland ,  Bing Ji ,  Kenneth Lucchesi

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.

公开(公告)号：US20250006470A1

公开(公告)日：2025-01-02

申请号：US18694949

申请日：2022-09-28

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Bing Ji ,  Kenneth Lucchesi ,  John Holland

IPC: H01J37/32

Abstract: An outer upper electrode for a capacitively coupled plasma (CCP) chamber is provided. The outer upper electrode is configured to surround an upper electrode of the CCP chamber. The outer upper electrode includes a horizontal section and a vertical section. The vertical section is substantially perpendicular to a surface of the upper electrode that faces a lower electrode of the CCP chamber. The vertical section has an inner surface that faces and surrounds the process space. The outer upper electrode can be powered with an RF source, a DC source, or coupled to filters. The outer upper electrode, when powered, is configured to generate secondary electrons that are accelerated in the high voltage RF or DC sheath transverse to the upper and lower electrodes and normal to an inner surface of the vertical section.

公开(公告)号：US20240186112A1

公开(公告)日：2024-06-06

申请号：US18415492

申请日：2024-01-17

Applicant: Lam Research Corporation

Inventor： Ranadeep Bhowmick ,  John Holland ,  Felix Leib Kozakevich ,  Bing Ji ,  Alexei Marakhtanov

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/32926

Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.

公开(公告)号：US20230274914A1

公开(公告)日：2023-08-31

申请号：US18011062

申请日：2021-11-05

Applicant: Lam Research Corporation

Inventor： Alexei M. Marakhtanov ,  Felix Leib Kozakevich ,  Bing Ji ,  Ranadeep Bhowmick ,  John Patrick Holland ,  Alexander Matyushkin

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32715 ,  H01J37/32642 ,  H01J37/32165 ,  H01J2237/334 ,  H01J2237/2007 ,  H01L21/6833

Abstract: A system having the low frequency RF generator is described. The low frequency RF has an operating frequency range between 10 kilohertz (kHz) and 330 kHz. The low frequency RF generator generates an RF signal. The system further includes an impedance matching circuit coupled to the low frequency RF generator for receiving the RF signal. The impedance matching circuit modifies an impedance of the RF signal to output a modified RF signal. The system includes a plasma chamber coupled to the RF generator for receiving the modified RF signal. The plasma chamber includes a chuck having a dielectric layer and a base metal layer. The dielectric layer is located on top of the base metal layer. The dielectric layer has a bottom surface, and the base metal layer has a top surface. The base metal layer has a porous plug and the bottom surface of the dielectric layer has a portion that is in contact with the porous plug.

公开(公告)号：US20230245874A1

公开(公告)日：2023-08-03

申请号：US18011826

申请日：2022-03-15

Applicant: Lam Research Corporation

Inventor： Alexei M. Marakhtanov ,  James Eugene Caron ,  John Patrick Holland ,  Felix Leib Kozakevich ,  Ranadeep Bhowmick ,  Bing Ji

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32183 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/334

Abstract: Systems and methods for controlling a plasma sheath characteristic are described. One of the methods includes determining a first value of the plasma sheath characteristic of a plasma sheath formed within a plasma chamber. The method further includes determining whether the first value of the plasma sheath characteristic is within a predetermined range from a preset value of the plasma sheath characteristic. The method also includes modifying a variable of a radio frequency (RF) generator coupled to the plasma chamber via an impedance matching circuit upon determining that the first value is not within the predetermined range from the preset value. The operation of modifying the variable of the RF generator is performed until it is determined that the first value of the plasma sheath characteristic is within the predetermined range from the preset value.

公开(公告)号：US20230223242A1

公开(公告)日：2023-07-13

申请号：US18010453

申请日：2021-11-02

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Bing Ji ,  Ken Lucchesi ,  John Holland

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3266 ,  H01J37/32146 ,  H01L21/3065 ,  H01J2237/3343

Abstract: In some implementations, a method for performing a plasma process in a chamber is provided, including: supplying a process gas to the chamber; applying pulsed RF power to the process gas in the chamber, the pulsed RF power being provided at a predefined frequency, wherein the applying of the pulsed RF power to the process gas generates a plasma in the chamber; during the applying of the RF power, applying a pulsed DC current to a magnetic coil that is disposed over the chamber, wherein the pulsed DC current is provided at the predefined frequency.

公开(公告)号：US20230215694A1

公开(公告)日：2023-07-06

申请号：US18011131

申请日：2021-12-23

Applicant: Lam Research Corporation

Inventor： Alexei M. Marakhtanov ,  Felix Leib Kozakevich ,  Bing Ji ,  John P. Holland ,  Ranadeep Bhowmick

IPC: H01J37/32 ,  H03K3/017

CPC classification number: H01J37/32165 ,  H01J37/32926 ,  H01J37/32935 ,  H03K3/017 ,  H01J2237/3343

Abstract: A method for achieving a first uniformity level in a processing rate across a surface of a substrate is described. The method includes receiving the first uniformity level to be achieved across the surface of the substrate and identifying a first plurality of duty cycles associated with a first plurality of states based on the first uniformity level. The first plurality of states are of a variable of a first radio frequency (RF) signal. The method further includes controlling an RF generator to generate the first RF signal having the first plurality of duty cycles.

公开(公告)号：US20230081542A1

公开(公告)日：2023-03-16

申请号：US17795225

申请日：2021-01-12

Applicant: Lam Research Corporation

Inventor： Felix Leib Kozakevich ,  Alexei Marakhtanov ,  Bing Ji ,  Ranadeep Bhowmick ,  John Holland

IPC: H01J37/32

Abstract: An impedance match is described. The impedance match includes a housing having a bottom portion and a top portion. The bottom portion has match components and the top portion has an elongated body. A low frequency input is connected through the bottom portion of the housing, and the low frequency input is interconnected to a first set of capacitors and inductors. A high frequency input is connected through the bottom portion of the housing, and the high frequency input is interconnected to a second set of capacitors and inductors. An elongated strap extends between the bottom portion and the top portion of the housing. A lower portion of the elongated strap is coupled to the second set of capacitors and inductors and an upper portion of the elongated strap is connected to an RF rod at an end of the elongated body.

公开(公告)号：US20230007885A1

公开(公告)日：2023-01-12

申请号：US17801227

申请日：2021-02-08

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Leib Kozakevich ,  Ranadeep Bhowmick ,  Bing Ji ,  John Holland

IPC: H01J37/32

Abstract: A method for achieving uniformity in an etch rate is described. The method includes receiving a voltage signal from an output of a match, and determining a positive crossing and a negative crossing of the voltage signal for each cycle of the voltage signal. The negative crossing of each cycle is consecutive to the positive crossing of the cycle. The method further includes dividing a time interval of each cycle of the voltage signal into a plurality of bins. For one or more of the plurality of bins associated with the positive crossing and one or more of the plurality of bins associated with the negative crossing, the method includes adjusting a frequency of a radio frequency generator to achieve the uniformity in the etch rate.

公开(公告)号：US20210319980A1

公开(公告)日：2021-10-14

申请号：US17276798

申请日：2018-09-28

Applicant: Lam Research Corporation

Inventor： Ranadeep Bhowmick ,  John Holland ,  Felix Leib Kozakevich ,  Bing Ji ,  Alexei Marakhtanov

IPC: H01J37/32

Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.