公开(公告)号：US08405279B2

公开(公告)日：2013-03-26

申请号：US13532991

申请日：2012-06-26

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

IPC分类号： H01L21/02

CPC分类号： H01L49/00 ,  H01C10/103

摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

公开(公告)号：US08247947B2

公开(公告)日：2012-08-21

申请号：US12632154

申请日：2009-12-07

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

IPC分类号： H01L41/00

CPC分类号： H01L49/00 ,  H01C10/103

摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

公开(公告)号：US20110122682A1

公开(公告)日：2011-05-26

申请号：US12624141

申请日：2009-11-23

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Robert L. Sandstrom

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Robert L. Sandstrom

IPC分类号： G11C11/00 ,  H01L45/00 ,  H01L21/06 ,  G11C7/00 ,  H01L21/336 ,  H01L21/82

CPC分类号： H01L45/1233 ,  B82Y10/00 ,  G11C13/0004 ,  G11C2213/16 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/775 ,  H01L45/06 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1666

摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.

摘要翻译： 存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结， 邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。

公开(公告)号：US20120225527A1

公开(公告)日：2012-09-06

申请号：US13471711

申请日：2012-05-15

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Robert L. Sandstrom

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Robert L. Sandstrom

IPC分类号： H01L21/336

CPC分类号： H01L45/1233 ,  B82Y10/00 ,  G11C13/0004 ,  G11C2213/16 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/775 ,  H01L45/06 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1666

摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.

摘要翻译： 存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结， 邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。

公开(公告)号：US07491965B2

公开(公告)日：2009-02-17

申请号：US12127994

申请日：2008-05-28

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US20080048169A1

公开(公告)日：2008-02-28

申请号：US11467294

申请日：2006-08-25

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00 ,  H01L21/76

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US08159854B2

公开(公告)日：2012-04-17

申请号：US12495027

申请日：2009-06-30

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns

IPC分类号： G11C5/06

CPC分类号： H03K19/02 ,  G11C11/412 ,  G11C13/0002 ,  H01L49/00 ,  Y10T29/42

摘要： A piezo-effect transistor (PET) device includes a piezoelectric (PE) material disposed between first and second electrodes; and a piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.

摘要翻译： 压电效应晶体管（PET）器件包括设置在第一和第二电极之间的压电（PE）材料; 以及设置在第二电极和第三电极之间的压阻（PR）材料，其中第一电极包括栅极端子，第二电极包括公共端子，并且第三电极包括输出端子，使得PR的电阻 材料取决于PE材料上施加的电压，通过PE材料对PR材料的施加压力。

公开(公告)号：US20100073997A1

公开(公告)日：2010-03-25

申请号：US12234100

申请日：2008-09-19

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Xiao Hu Liu ,  Glenn J. Martyna ,  Martin Muser ,  Dennis M. Newns

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Xiao Hu Liu ,  Glenn J. Martyna ,  Martin Muser ,  Dennis M. Newns

IPC分类号： G11C11/00 ,  H04R17/00 ,  G11C7/00

CPC分类号： G11C23/00 ,  G11C13/0002 ,  G11C13/0004 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/148 ,  Y10T29/42

摘要： A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.

摘要翻译： 压电编程的非易失性存储单元结构包括可编程压阻滞回材料（PRHM），其能够通过施加的压力循环而在低电阻状态和高电阻状态之间相互转换; 机械地耦合到PHRM的压电材料，使得跨压电材料施加的电压导致施加到PRHM的拉伸或压缩应力中的一个，这取决于所施加的电压的极性; 以及与PRHM电连通的一个或多个电极，其中所述一个或多个电极被配置为提供通过所述压电材料的写入编程电流路径和通过所述PRHM的读取电流路径。

公开(公告)号：US07545667B2

公开(公告)日：2009-06-09

申请号：US11393270

申请日：2006-03-30

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Dennis M. Newns ,  Matthew R. Wordeman ,  Albert M. Young

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Dennis M. Newns ,  Matthew R. Wordeman ,  Albert M. Young

IPC分类号： G11C11/00

CPC分类号： H01L45/144 ,  H01L23/5226 ,  H01L23/5252 ,  H01L23/5256 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.

摘要翻译： 用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。 加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。 因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接。

公开(公告)号：US07394089B2

公开(公告)日：2008-07-01

申请号：US11467294

申请日：2006-08-25

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。