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公开(公告)号：US08213224B2
公开(公告)日：2012-07-03
申请号：US12624141
申请日：2009-11-23
IPC分类号： G11C11/00
CPC分类号： H01L45/1233 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L45/06 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1666
摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要翻译： 存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结， 邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。
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公开(公告)号：US20110122682A1
公开(公告)日：2011-05-26
申请号：US12624141
申请日：2009-11-23
CPC分类号： H01L45/1233 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L45/06 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1666
摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要翻译： 存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结， 邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。
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公开(公告)号：US20120225527A1
公开(公告)日：2012-09-06
申请号：US13471711
申请日：2012-05-15
IPC分类号： H01L21/336
CPC分类号： H01L45/1233 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L45/06 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1666
摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要翻译： 存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结， 邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。
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公开(公告)号：US08987084B2
公开(公告)日：2015-03-24
申请号：US13471711
申请日：2012-05-15
CPC分类号： H01L45/1233 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L45/06 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1666
摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要翻译： 存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结， 邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。
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5.发明申请COUPLING PIEZOELECTRIC MATERIAL GENERATED STRESSES TO DEVICES FORMED IN INTEGRATED CIRCUITS 有权联合压电材料生成的应力到集成电路中形成的器件公开(公告)号：US20120270353A1
公开(公告)日：2012-10-25
申请号：US13532991
申请日：2012-06-26
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
IPC分类号： H01L21/02
CPC分类号： H01L49/00 , H01C10/103
摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。
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6.发明授权Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material 有权使用外部加热相变材料的BEOL区域可编程保险丝/非易失性存储器结构公开(公告)号：US07633079B2
公开(公告)日：2009-12-15
申请号：US11850742
申请日：2007-09-06
申请人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
发明人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
IPC分类号： H01L47/00
CPC分类号： H01L23/5256 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.
摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路 通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。
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公开(公告)号：US20090039331A1
公开(公告)日：2009-02-12
申请号：US11834851
申请日：2007-08-07
申请人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
发明人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
CPC分类号： G11C17/165 , G11C13/0004 , G11C13/0069 , G11C17/16 , G11C2013/0078 , G11C2013/008 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
摘要翻译： 公开了包括相变材料的结构。 该结构可以包括第一电极; 第二电极; 电连接第一电极和第二电极以使电流通过的相变材料; 以及围绕所述相变材料的氮化钽加热器层，用于通过向所述相变材料施加第二电流来将所述相变材料转换成非晶态绝缘状态和结晶导电状态。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。
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8.发明申请PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES USING EXTERNALLY HEATED PHASE CHANGE MATERIAL 审中-公开可编程保险丝/非易失性存储器结构使用外部加热相变材料公开(公告)号：US20080285335A1
公开(公告)日：2008-11-20
申请号：US12127909
申请日：2008-05-28
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-Kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-Kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
IPC分类号： G11C11/00
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。
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9.发明授权Coupling piezoelectric material generated stresses to devices formed in integrated circuits 有权将压电材料耦合到产生的应力到集成电路中形成的器件公开(公告)号：US08405279B2
公开(公告)日：2013-03-26
申请号：US13532991
申请日：2012-06-26
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
IPC分类号： H01L21/02
CPC分类号： H01L49/00 , H01C10/103
摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。
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10.发明授权Coupling piezoelectric material generated stresses to devices formed in integrated circuits 有权将压电材料耦合到产生的应力到集成电路中形成的器件公开(公告)号：US08247947B2
公开(公告)日：2012-08-21
申请号：US12632154
申请日：2009-12-07
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Glenn J. Martyna , Xiao Hu Liu , Dennis M. Newns , Kuan-Neng Chen
IPC分类号： H01L41/00
CPC分类号： H01L49/00 , H01C10/103
摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。
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