公开(公告)号：US08466073B2

公开(公告)日：2013-06-18

申请号：US13448624

申请日：2012-04-17

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/316

CPC classification number: H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

Abstract translation: 描述形成氧化硅层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

公开(公告)号：US20120309205A1

公开(公告)日：2012-12-06

申请号：US13448624

申请日：2012-04-17

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/316

CPC classification number: H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen containing film is formed by combining a radical precursor (excited in a remote plasma) with m unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

Abstract translation: 描述形成氧化硅层的方法。 该方法首先通过自由基成分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未加注射的无碳硅前体组合形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

公开(公告)号：US20170031238A1

公开(公告)日：2017-02-02

申请号：US15070134

申请日：2016-03-15

Applicant: Linlin Wang ,  Ye Zhou ,  ChengYen Liu ,  Zhenkui Meng

Inventor： Linlin Wang ,  Ye Zhou ,  ChengYen Liu ,  Zhenkui Meng

IPC: G03F1/42 ,  G03F1/80

CPC classification number: G03F1/42 ,  G03F1/50 ,  H04R2201/003

Abstract: A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.

Abstract translation: 在本公开中提供了一种照相掩模。 摄影掩模包括绝缘体上硅（SOI）基底和形成在SOI基底中的阶梯式开口。 SOI基底包括硅衬底，中间层和硅层，中间层布置在绝缘体衬底和绝缘体层之间。 所述阶梯式开口包括第一开口部和第二开口部，所述第一开口部穿透所述硅层，并具有第一开口面积; 第二开口部分至少穿过硅衬底并与第一开口部分对准。 第二开口部分具有大于第一开口部分的第一开口面积的第二开口面积。 本公开还提供了一种制造照相掩模的方法。

公开(公告)号：US20130217240A1

公开(公告)日：2013-08-22

申请号：US13590611

申请日：2012-08-21

Applicant: Abhijit Basu Mallick ,  Nitin K. Ingle ,  Linlin Wang ,  Brian S. Underwood

Inventor： Abhijit Basu Mallick ,  Nitin K. Ingle ,  Linlin Wang ,  Brian S. Underwood

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0234 ,  H01L21/31111

Abstract: Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.

Abstract translation: 描述了在半导体衬底上形成电介质层的方法。 所述方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。 含硅前体和带电的含氮前体可以在化学气相沉积室中反应，以在基底上沉积可流动的硅 - 碳 - 氮材料。 所述方法还可以包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成电介质层。

公开(公告)号：USD661679S1

公开(公告)日：2012-06-12

申请号：US29407678

申请日：2011-12-01

Applicant: Linlin Wang

Designer： Linlin Wang

公开(公告)号：US20110151677A1

公开(公告)日：2011-06-23

申请号：US12643196

申请日：2009-12-21

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/316

CPC classification number: H01L21/02326 ,  H01L21/02343

Abstract: Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

Abstract translation: 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

公开(公告)号：US20090104789A1

公开(公告)日：2009-04-23

申请号：US11876541

申请日：2007-10-22

Applicant: Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

Inventor： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

IPC: H01L21/31

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/24 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76837

Abstract: A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

Abstract translation: 在基板上形成氧化硅层的方法。 该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。 该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。 此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。 至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。