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公开(公告)号：US09637839B2
公开(公告)日：2017-05-02
申请号：US14193962
申请日：2014-02-28
Applicant: Massachusetts Institute of Technology
Inventor： Jing Kong , Lain-Jong Li , Yi-Hsien Lee
Abstract: Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.
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公开(公告)号：US20160326431A1
公开(公告)日：2016-11-10
申请号：US15149131
申请日：2016-05-07
Applicant: Massachusetts Institute of Technology
Inventor： Zhengtao Deng , Tan Ming , He Dong , Aishuang Xiang , Jing Kong
IPC: C09K11/88
CPC classification number: C09K11/883 , B01J13/02 , B82Y15/00 , B82Y40/00 , C09B67/0097 , Y10S977/882
Abstract: A method for preparing a core-shell nanocrystal can include mixing an M-containing precursor solution, an X-containing precursor solution, and an acid or alcohol in an inert atmosphere at a first temperature to form a reaction mixture; maintaining the reaction mixture at the first temperature to grow the MX core of the nanocrystal; raising the temperature of the reaction mixture to a second temperature; and maintaining the reaction mixture at the second temperature to grow a shell of the nanocrystal.
Abstract translation: 制备核 - 壳纳米晶体的方法可以包括在惰性气氛中在第一温度下混合含M前体溶液，含X前体溶液和酸或醇以形成反应混合物; 将反应混合物保持在第一温度以使纳米晶体的MX芯生长; 将反应混合物的温度升至第二温度; 并将反应混合物保持在第二温度以生长纳米晶体的壳。
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公开(公告)号：US11935938B2
公开(公告)日：2024-03-19
申请号：US17320183
申请日：2021-05-13
Applicant: Massachusetts Institute of Technology
Inventor： Pin-Chun Shen , Jing Kong
CPC classification number: H01L29/4983 , H01L29/45 , H01L29/66628
Abstract: Devices, such as transistors, that use bismuth to create ohmic contacts are provided, as are methods of manufacturing the same. The transistors, such as field-effect transistors, can include one or more two-dimensional materials, and electrical contact areas can be created on the two-dimensional material(s) using bismuth. The bismuth can help to provide energy-barrier free, ohmic contacts, and the resulting devices can have performance levels that rival or exceed state-of-the-art devices that utilize three-dimensional materials, like silicon. The two-dimensional materials can include transition metal dichalcogenides, such as molybdenum disulfide.
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公开(公告)号：US20230249974A1
公开(公告)日：2023-08-10
申请号：US17980413
申请日：2022-11-03
Inventor： Piran Kidambi , Ahmed Ibrahim , Tahar Laoui , Jing Kong , Rohit N Karnik , Sui Zhang
IPC: C01B32/186 , C23C16/02 , C23C16/26 , C23C16/56
CPC classification number: C01B32/186 , C23C16/0227 , C23C16/26 , C23C16/56 , C23C16/0236
Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.
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公开(公告)号：US11524898B2
公开(公告)日：2022-12-13
申请号：US16081157
申请日：2017-11-03
Inventor： Piran Kidambi , Ahmed Ibrahim , Tahar Laoui , Jing Kong , Rohit N. Karnik , Sui Zhang
IPC: C23C16/02 , C01B32/186 , C23C16/26 , C23C16/56
Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.
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Patent Agency Ranking
公开(公告)号：US10988842B2
公开(公告)日：2021-04-27
申请号：US16088046
申请日：2018-04-17
Applicant: Massachusetts Institute of Technology
Inventor： Brian J. Modtland , Jing Kong , Marc A. Baldo , Efren Navarro-Moratalla , Xiang Ji
IPC: C23C16/30
Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
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公开(公告)号：US10914637B2
公开(公告)日：2021-02-09
申请号：US16449410
申请日：2019-06-23
Applicant: Massachusetts Institute of Technology
Inventor： Yuxuan Lin , Xiang Ji , Tomas Palacios , Jing Kong
Abstract: A thermo-mechanical bolometer includes a substrate and a sensing component mounted on the substrate. The sensing element comprises (a) at least one thermal-actuation component mounted in parallel with the substrate and (b) a strain sensor mounted on the at least one layer of thermal-actuation component. The at least one thermal-actuation component alone or in combination (a) absorbs electromagnetic waves and converts energy from absorbed electromagnetic waves into a change in temperature and (b) converts the change in temperature into a deformation of the at least one layer. The strain sensor comprises a layer of fragments with a gap space between the fragments, wherein the strain sensor senses the deformation or mechanical movement and exhibits a change in electrical resistance in response to the sensed deformation or mechanical movement.
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公开(公告)号：US20200062600A1
公开(公告)日：2020-02-27
申请号：US16081157
申请日：2017-11-03
Inventor： Piran Kidambi , Ahmed Ibrahim , Tahar Laoui , Jing Kong , Rohit N. Karnik , Sui Zhang
IPC: C01B32/186 , C23C16/02 , C23C16/26 , C23C16/56
Abstract: Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.
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19.发明申请公开(公告)号：US20190338416A1
公开(公告)日：2019-11-07
申请号：US16382407
申请日：2019-04-12
Applicant: Massachusetts Institute of Technology
Inventor： Jing Kong , Qingqing Ji , Zhenfei Gao
IPC: C23C16/30 , C23C16/455 , C23C16/08
Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.
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公开(公告)号：US10246637B2
公开(公告)日：2019-04-02
申请号：US15149131
申请日：2016-05-07
Applicant: Massachusetts Institute of Technology
Inventor： Zhengtao Deng , Tian Ming , He Dong , Aishuang Xiang , Jing Kong
Abstract: A method for preparing a core-shell nanocrystal can include mixing an M-containing precursor solution, an X-containing precursor solution, and an acid or alcohol in an inert atmosphere at a first temperature to form a reaction mixture; maintaining the reaction mixture at the first temperature to grow the MX core of the nanocrystal; raising the temperature of the reaction mixture to a second temperature; and maintaining the reaction mixture at the second temperature to grow a shell of the nanocrystal.
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