Non-volatile memory with physical unclonable function and random number generator

    公开(公告)号:US10855477B2

    公开(公告)日:2020-12-01

    申请号:US15857341

    申请日:2017-12-28

    Abstract: A device which can be implemented on a single packaged integrated circuit or a multichip includes a plurality of non-volatile memory cells, and logic to use a physical unclonable function to produce an initial key and to store the initial key in a set of non-volatile memory cells in the plurality of non-volatile memory cells. The device can include logic to use a random number generator to generate a random number, and logic to combine the initial key and the random number to produce an enhanced key. The physical unclonable function can use entropy derived from non-volatile memory cells in the plurality of non-volatile memory cells to produce the initial key. Logic is described to disable changes to data in the set of non-volatile memory cells, and thereby freeze the key after it is stored in the set.

    Method and device for programming non-volatile memory

    公开(公告)号:US10445173B2

    公开(公告)日:2019-10-15

    申请号:US15632460

    申请日:2017-06-26

    Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells stores data having at least 2 bits at least corresponding to a first page and a second page. The first programming-verifying operation including programming the first page and verifying whether the first page is successfully programmed is performed. When a first original fail-bit number for the first page is more than a predetermined fail-bit value, a second programming-verifying operation to the first page is performed to obtain a first over-counting fail-bit number for the first page and reduce the first original fail-bit number by the first over-counting fail-bit number. When the reduced first original fail-bit number is not more than the predetermined fail-bit value, the first page is set as successfully programmed.

    METHOD AND DEVICE FOR PROGRAMMING NON-VOLATILE MEMORY

    公开(公告)号:US20180373584A1

    公开(公告)日:2018-12-27

    申请号:US15632460

    申请日:2017-06-26

    CPC classification number: G06F11/102 G06F11/1072

    Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells stores data having at least 2 bits at least corresponding to a first page and a second page. The first programming-verifying operation including programming the first page and verifying whether the first page is successfully programmed is performed. When a first original fail-bit number for the first page is more than a predetermined fail-bit value, a second programming-verifying operation to the first page is performed to obtain a first over-counting fail-bit number for the first page and reduce the first original fail-bit number by the first over-counting fail-bit number. When the reduced first original fail-bit number is not more than the predetermined fail-bit value, the first page is set as successfully programmed.

    ECC method for flash memory
    15.
    发明授权
    ECC method for flash memory 有权
    闪存的ECC方法

    公开(公告)号:US09535785B2

    公开(公告)日:2017-01-03

    申请号:US14158613

    申请日:2014-01-17

    CPC classification number: G06F11/1048 G06F2212/1036 G11C16/3436

    Abstract: A method of operating a memory storing data sets, and ECCs for the data sets is provided. The method includes when writing new data in a data set, computing and storing an ECC, if a number of addressable segments storing the new data and data previously programmed in the data set includes at least a predetermined number of addressable segments. The method includes storing indications for whether to enable or disable use of the ECCs, using the ECC and a first additional ECC bit derived from the ECC. The method includes reading from a data set an extended ECC including an ECC and a first additional ECC bit derived from the ECC, and enabling or disabling use of the ECC according to the indications stored for the data set. The method includes enabling use of ECCs for blank data sets, using the indications and a second additional ECC bit.

    Abstract translation: 提供了一种操作存储数据集的存储器和数据集的ECC的方法。 如果存储新数据的多个可寻址段和先前在数据集中编程的数据包括至少预定数量的可寻址段,则该方法包括在将新数据写入数据集时,计算和存储ECC。 该方法包括使用ECC和从ECC导出的第一附加ECC比特来存储是否启用或禁止使用ECC的指示。 该方法包括从数据集读取包括ECC的扩展ECC和从ECC导出的第一附加ECC位,以及根据为数据集存储的指示启用或禁用ECC的使用。 该方法包括使用所述指示和第二附加ECC位使能ECC空白数据集。

    ECC METHOD FOR DOUBLE PATTERN FLASH MEMORY
    16.
    发明申请
    ECC METHOD FOR DOUBLE PATTERN FLASH MEMORY 审中-公开
    双模式闪存存储器的ECC方法

    公开(公告)号:US20150370634A1

    公开(公告)日:2015-12-24

    申请号:US14841950

    申请日:2015-09-01

    CPC classification number: G06F11/1068 G06F11/1052 G11C29/52 G11C2029/0411

    Abstract: A method of operating a memory device storing ECCs for corresponding data is provided. The method includes writing an extended ECC during a first program operation, the extended ECC including an ECC and an extended bit derived from the ECC. The method includes overwriting the extended ECC with a pre-determined state during a second program operation to indicate the second program operation. The method includes, setting the ECC to an initial ECC state before the first program operation; during the first program operation, computing the ECC, changing the ECC to the initial ECC state if the computed ECC equals the pre-determined state; and changing the extended bit to an initial value if the ECC equals the initial ECC state. The method includes reading an extended ECC including an extended bit and an ECC for corresponding data, and determining whether to enable ECC logic using the extended ECC.

    Abstract translation: 提供一种操作存储用于相应数据的ECC的存储设备的方法。 该方法包括在第一程序操作期间写入扩展ECC,扩展ECC包括ECC和从ECC导出的扩展位。 该方法包括在第二程序操作期间以预定状态重写扩展ECC以指示第二程序操作。 该方法包括:在第一程序操作之前将ECC设置为初始ECC状态; 在第一程序操作期间,如果所计算的ECC等于预定状态,则计算ECC,将ECC改变为初始ECC状态; 并且如果ECC等于初始ECC状态,则将扩展位改变为初始值。 该方法包括读取包括扩展位的扩展ECC和用于相应数据的ECC,并且确定是否使用扩展ECC来启用ECC逻辑。

    ECC METHOD FOR FLASH MEMORY
    17.
    发明申请
    ECC METHOD FOR FLASH MEMORY 有权
    闪存存储器的ECC方法

    公开(公告)号:US20150205665A1

    公开(公告)日:2015-07-23

    申请号:US14158613

    申请日:2014-01-17

    CPC classification number: G06F11/1048 G06F2212/1036 G11C16/3436

    Abstract: A method of operating a memory storing data sets, and ECCs for the data sets is provided. The method includes when writing new data in a data set, computing and storing an ECC, if a number of addressable segments storing the new data and data previously programmed in the data set includes at least a predetermined number of addressable segments. The method includes storing indications for whether to enable or disable use of the ECCs, using the ECC and a first additional ECC bit derived from the ECC. The method includes reading from a data set an extended ECC including an ECC and a first additional ECC bit derived from the ECC, and enabling or disabling use of the ECC according to the indications stored for the data set. The method includes enabling use of ECCs for blank data sets, using the indications and a second additional ECC bit.

    Abstract translation: 提供了一种操作存储数据集的存储器和数据集的ECC的方法。 如果存储新数据的多个可寻址段和先前在数据集中编程的数据包括至少预定数量的可寻址段,则该方法包括在将新数据写入数据集时,计算和存储ECC。 该方法包括使用ECC和从ECC导出的第一附加ECC比特来存储是否启用或禁止使用ECC的指示。 该方法包括从数据集读取包括ECC的扩展ECC和从ECC导出的第一附加ECC位,以及根据为数据集存储的指示启用或禁用ECC的使用。 该方法包括使用所述指示和第二附加ECC位使能ECC空白数据集。

    Memory device and programming method thereof

    公开(公告)号:US12237024B2

    公开(公告)日:2025-02-25

    申请号:US17894838

    申请日:2022-08-24

    Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

    MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
    19.
    发明公开

    公开(公告)号:US20240071523A1

    公开(公告)日:2024-02-29

    申请号:US17894838

    申请日:2022-08-24

    CPC classification number: G11C16/3459 G11C16/08 G11C16/102 G11C16/28

    Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

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