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    LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING
    11.
    发明申请
    LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING 审中-公开
    激光，等离子体蚀刻和背面磨砂工艺

    公开(公告)号：US20140363952A1

    公开(公告)日：2014-12-11

    申请号：US14466671

    申请日：2014-08-22

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  H01L21/02 ,  H01L21/027

    CPC分类号： H01L21/78 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/02019 ,  H01L21/027 ,  Y10T29/5124

    摘要： Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ICs). A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to advance a front of an etched trench partially through the semiconductor wafer thickness. The front side mask is removed, a backside grind tape applied to the front side, and a back side grind performed to reach the etched trench, thereby singulating the ICs.

    摘要翻译： 执行前侧激光划线和等离子体蚀刻，然后进行背面研磨以分离集成电路芯片（IC）。 形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。 通过激光划线将掩模图案化以提供具有间隙的图案化掩模。 图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以使蚀刻沟槽的前部部分地延伸穿过半导体晶片厚度。 去除前侧面罩，施加到前侧的背面研磨带，和进行到蚀刻沟槽的后侧研磨，由此分离IC。

    WAFER DICING FROM WAFER BACKSIDE
    18.
    发明申请
    WAFER DICING FROM WAFER BACKSIDE 有权
    WAFER从WAFER BACKSIDE开始

    公开(公告)号：US20140179084A1

    公开(公告)日：2014-06-26

    申请号：US14095824

    申请日：2013-12-03

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/822

    CPC分类号： H01L21/822 ,  B23K26/0624 ,  B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3081 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside. The protection tape is the removed from the wafer front side.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 例如，一种方法包括将保护带施加到晶片正面，所述晶片具有附接到晶片背面的切割带。 切割胶带从晶片背面去除，以露出设置在晶片背面和切割胶带之间的管芯附着膜。 或者，如果在晶片背面和切割带之间不设置管芯附着膜，则在该操作中将芯片附着膜施加到晶片背面。 将水溶性掩模施加到晶片背面。 在晶片背面进行激光划线，以切割掩模，芯片附着膜和晶片，包括包括在晶片的正面和背面内的所有层。 执行等离子体蚀刻以处理或清洁由激光划线暴露的晶片的表面。 执行晶片背面清洁，并且将第二切割带施​​加到晶片背面。 保护带从晶片正面去除。