公开(公告)号：US5680428A

公开(公告)日：1997-10-21

申请号：US519755

申请日：1995-08-28

申请人： Mitsuaki Amemiya ,  Shunichi Uzawa

发明人： Mitsuaki Amemiya ,  Shunichi Uzawa

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/683 ,  B32B31/04

CPC分类号： G03F7/70716 ,  G03F7/70783 ,  G03F7/70866 ,  G03F7/70875 ,  Y10T279/11

摘要： Disclosed are an object holding process and and an apparatus therefor in which a process strain of the object can be accurately compensated for. When the exposure operation is started, the bottom surface of the object is held by a holding unit. If the object has a strain, the process strain is calculated. Here, if the process strain is larger than a tolerance, the temperature of the object is set to an object setting temperature in a position other than an exposure position in order to contract or expand the object by a predetermined amount for a magnification correction. The bottom surface of the object is then held by the holding unit again, and the exposure of the object is performed in the exposure position.

摘要翻译： 公开了一种物体保持过程及其装置，其中可以精确地补偿物体的过程应变。 当曝光操作开始时，物体的底面由保持单元保持。 如果物体有应变，则计算过程应变。 这里，如果过程应变大于公差，则将物体的温度设定为除曝光位置以外的位置的物体设定温度，以使物体收缩或扩大预定量用于倍率校正。 然后，物体的底面再次被保持单元保持，并且在曝光位置进行物体的曝光。

公开(公告)号：US07312459B2

公开(公告)日：2007-12-25

申请号：US11082404

申请日：2005-03-17

申请人： Mitsuaki Amemiya ,  Akira Miyake

发明人： Mitsuaki Amemiya ,  Akira Miyake

IPC分类号： G01J1/42 ,  G21K5/00

CPC分类号： G02B17/0631 ,  B82Y10/00 ,  G02B5/22 ,  G02B17/0642 ,  G02B17/0663 ,  G21K2201/061

摘要： Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device. In another preferred from, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, a gas filter disposed in a portion of a light path of the EUV light and being filled with a predetermined gas, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of the reception of EUV light by the light receiving device.

摘要翻译： 公开了一种用于测量EUV光源的聚光点的位置，大小和/或形状的测量装置。 在一个优选形式中，该装置包括用于接收从光会聚点发散的EUV光的光接收装置，用于将EUV光引向光接收装置的光学系统，设置在光路的一部分中的遮光构件，用于 EUV光并且具有多个开口，以及用于基于光接收装置的EUV光的接收来检测在聚光点处的EUV光的空间分布的系统。 在另一个优选的实施例中，该装置包括用于接收从光会聚点发散的EUV光的光接收装置，设置在EUV光的光路部分中并被预定气体填充的气体过滤器的系统， 基于由光接收装置接收到的EUV光，在光会聚点检测EUV光的空间分布。

公开(公告)号：US20050270509A1

公开(公告)日：2005-12-08

申请号：US11144319

申请日：2005-06-03

申请人： Nobuaki Ogushi ,  Mitsuaki Amemiya

发明人： Nobuaki Ogushi ,  Mitsuaki Amemiya

IPC分类号： G03F7/20 ,  G03B27/52 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F9/7088 ,  G03F9/7076

摘要： A measuring apparatus according for measuring relative positions between a first mark on a movable reticle stage to hold a reticle, and a second mark on a movable object stage to hold an object to be exposed, the apparatus includes a detector for detecting light that has passed the first and second marks, and a processor for calculating the relative positions based on an output of the detector, wherein each of the first and second marks includes plural patterns to direct the light, at least ones of widths and intervals of the plural patterns being non-uniform.

摘要翻译： 一种测量装置，用于测量可动掩模台上的第一标记以保持掩模版之间的相对位置，以及在可移动物体台上的第二标记以保持待曝光的物体，该装置包括用于检测已经通过的光的检测器 第一和第二标记，以及用于基于检测器的输出来计算相对位置的处理器，其中第一和第二标记中的每一个包括多个图案以引导光，多个图案中的至少一个宽度和间隔是 不均匀

公开(公告)号：US06645707B2

公开(公告)日：2003-11-11

申请号：US09534334

申请日：2000-03-24

申请人： Mitsuaki Amemiya ,  Shunichi Uzawa ,  Keiko Chiba ,  Yutaka Watanabe

发明人： Mitsuaki Amemiya ,  Shunichi Uzawa ,  Keiko Chiba ,  Yutaka Watanabe

IPC分类号： G03C556

CPC分类号： G03F7/70466 ,  G03F7/2022

摘要： A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.

摘要翻译： 一种器件制造方法包括：第一曝光步骤，用于通过使用多个第一掩模来执行衬底的第一层的多次曝光;显影步骤，用于显影衬底的第一层;以及第二曝光步骤，在显影步骤之后执行 ，用于通过使用多个第二掩模来执行所述基板的第二层的多次曝光。 第一掩模中的至少一个的一部分具有与形成在至少一个第二掩模的部分中的图案相同的图案。

公开(公告)号：US06453001B2

公开(公告)日：2002-09-17

申请号：US09853712

申请日：2001-05-14

申请人： Yutaka Watanabe ,  Mitsuaki Amemiya

发明人： Yutaka Watanabe ,  Mitsuaki Amemiya

IPC分类号： H01L2130

CPC分类号： G03F7/70058 ,  G21K1/04

摘要： An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.

摘要翻译： X射线曝光装置具有通过产生等离子体产生X射线的等离子体X射线源和用于会聚从X射线源发散的X射线的准直仪，并且减小全局发散角以照射掩模 X光片。 通过沿准直器的轴线垂直或平行的方向移动准直仪的位置或角度来改变从掩模上的一个点看到的局部会聚角度。 使用具有如此控制的会聚角的X射线将掩模上的图案转印到晶片。 结果，可控参数增加并且可以获得更合适的抗蚀剂图案。 此外，改善了曝光更精细图案的工艺公差。

公开(公告)号：US5606586A

公开(公告)日：1997-02-25

申请号：US678784

申请日：1996-07-11

申请人： Mitsuaki Amemiya ,  Yasuaki Fukuda ,  Yutaka Watanabe ,  Akira Miyake

发明人： Mitsuaki Amemiya ,  Yasuaki Fukuda ,  Yutaka Watanabe ,  Akira Miyake

IPC分类号： B29C35/08 ,  G03F7/20 ,  G21K5/00

CPC分类号： G03F7/70075 ,  G03F7/2039 ,  G03F7/702 ,  B29C2035/0844

摘要： An exposure method using X-rays from a synchrotron radiation source includes determining a relationship between an X-ray intensity distribution and an exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.

摘要翻译： 使用来自同步加速器辐射源的X射线的曝光方法包括确定曝光区域中的X射线强度分布与曝光量分布之间的关系; 以及通过使用关系控制曝光区域中的各个位置的剂量量来进行曝光操作，其中通过改变用于控制曝光操作的活动快门的驱动轮廓来控制剂量，并且其中的关系为 作为曝光区域中的位置信息的函数的X射线强度与曝光量之间的比例系数。

公开(公告)号：US5604779A

公开(公告)日：1997-02-18

申请号：US455154

申请日：1995-05-31

申请人： Mitsuaki Amemiya ,  Yutaka Watanabe

发明人： Mitsuaki Amemiya ,  Yutaka Watanabe

IPC分类号： G03B27/72 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/70075 ,  G03F7/2039 ,  G03F7/7035 ,  G03F7/70358 ,  G03F7/70875 ,  G03F9/703

摘要： A transfer magnification correcting method suited for use in scanning exposure by use of synchrotron radiation or the like. In proximity exposure according to the scanning exposure method by use of synchrotron radiation, the magnification in the scanning direction is corrected by relatively moving a wafer and a mask simultaneously with the scanning. Also, the overall correction of the magnification is performed by changing a proximity gap or adjusting the temperature of the mask or the wafer. As a result, it is possible to correct the transfer magnification separately in the vertical and horizontal directions.

摘要翻译： 适用于通过使用同步加速器辐射等扫描曝光的转印倍率校正方法。 在通过使用同步加速器辐射的根据扫描曝光方法的接近曝光中，通过与扫描同时相对移动晶片和掩模来校正扫描方向上的放大率。 此外，通过改变接近间隙或调节掩模或晶片的温度来执行放大率的总体校正。 结果，可以在垂直和水平方向上分别校正传送倍率。

公开(公告)号：US5400386A

公开(公告)日：1995-03-21

申请号：US277352

申请日：1994-07-19

申请人： Mitsuaki Amemiya ,  Akira Miyake

发明人： Mitsuaki Amemiya ,  Akira Miyake

IPC分类号： G01B11/27 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  A61B6/08

CPC分类号： G03F7/70058 ,  G03F7/70808

摘要： Disclosed is a device for determining an angle of incident light or a shift in incident light based on the output value of a detector. In a predetermined angle detection range, a beam of light incident on a detector for detecting the intensity of light incident thereon is restricted such that the amount of light continuously increases or decreases in accordance with the angle between an optical axis of the incident light and a referential axis of an exposure apparatus. Outside of the predetermined angle detection range, the amount of light is restricted depending on the direction in which the optical axis of the light is shifted from the angle detection range. The amount of light incident on the detector continuously increases or decreases in accordance with the angle between the optical axis of the incident light and the referential axis when the light is made incident within the angle detection range by means of the light restriction means. It is therefore possible to determine the angle of the incident light from the output value of the detector. When the light is made incident outside of the angle detection range, and since the amount of incident light is restricted in accordance with the direction in which the light is shifted, it is possible to determine the direction in which the light is shifted.

摘要翻译： 公开了一种用于基于检测器的输出值确定入射光的角度或入射光的偏移的装置。 在预定的角度检测范围内，限制入射到检测器上的入射光的光束，使得光的量根据入射光的光轴和 曝光装置的参考轴。 在预定角度检测范围之外，根据光的光轴从角度检测范围偏移的方向来限制光的量。 当光通过光限制装置入射到角度检测范围内时，入射到检测器上的光量随着入射光的光轴与参考轴之间的夹角而连续地增加或减小。 因此，可以根据检测器的输出值确定入射光的角度。 当光入射到角度检测范围之外时，并且由于入射光的量根据光的移动方向而受到限制，因此可以确定光的移动方向。

公开(公告)号：US5131022A

公开(公告)日：1992-07-14

申请号：US769493

申请日：1991-10-01

申请人： Shigeru Terashima ,  Mitsuaki Amemiya ,  Isamu Shimoda ,  Shunichi Uzawa ,  Takao Kariya

发明人： Shigeru Terashima ,  Mitsuaki Amemiya ,  Isamu Shimoda ,  Shunichi Uzawa ,  Takao Kariya

IPC分类号： G03F7/20

CPC分类号： G03F7/70558 ,  G03F7/2008 ,  G03F7/70875

摘要： An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.

公开(公告)号：US4604345A

公开(公告)日：1986-08-05

申请号：US729051

申请日：1985-04-30

申请人： Mitsuaki Amemiya

发明人： Mitsuaki Amemiya

IPC分类号： G03F7/20 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/70466 ,  G03F7/2022 ,  Y10S430/168

摘要： An exposure method for exposing a sensitive layer on a semiconductor wafer to an integrated-circuit pattern of a mask. The exposure is effected by a combination of a primary exposure step for exposing the sensitive layer to the pattern with a beam of high resolution and a secondary exposure step for exposing the sensitive layer with a beam of lower resolution and by an amount which does not have a substantial effect on the sensitization of the sensitive layer. By the combined exposures, the exposure time can be reduced as compared with that required in the exposure only through a high-resolution exposure.

摘要翻译： 一种用于将半导体晶片上的敏感层暴露于掩模的集成电路图案的曝光方法。 曝光是通过一次曝光步骤的组合实现的，该曝光步骤用高分辨率的光束将感光层曝光到图案;以及二次曝光步骤，用较低分辨率的光束曝光敏感层和不具有 对敏感层敏化的实质性影响。 通过组合曝光，与仅通过高分辨率曝光曝光所需的曝光时间相比，可以减少曝光时间。