公开(公告)号：US06538271B2

公开(公告)日：2003-03-25

申请号：US09874309

申请日：2001-06-06

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L2120

CPC分类号： H01L21/3185 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/345 ,  H01L27/10852 ,  H01L27/10861

摘要： A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.

摘要翻译： 半导体器件包括形成在半导体衬底上的半导体衬底和氮化硅膜。 氮化硅膜基本上不含Si-H键，并且每单位面积的Si-H密度为1×10 15 cm -2以下。

公开(公告)号：US6146938A

公开(公告)日：2000-11-14

申请号：US340143

申请日：1999-06-28

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

IPC分类号： H01L21/02 ,  H01L21/318 ,  H01L21/8242

CPC分类号： H01L27/1087 ,  H01L28/40 ,  H01L21/3185 ,  H01L27/1085

摘要： A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.

摘要翻译： 去除在硅衬底的表面上形成的天然膜。 砷被掺杂到硅衬底的表面中以形成作为下电容器电极的n型杂质扩散层。 在n型杂质扩散层上形成作为电容绝缘膜的氮化硅膜，而不会在n型杂质扩散层的表面上生长任何氧化膜。 在氮化硅膜上形成上部电容电极。

公开(公告)号：US06794713B2

公开(公告)日：2004-09-21

申请号：US10655022

申请日：2003-09-05

申请人： Ichiro Mizushima ,  Shigehiko Saida ,  Takeo Furuhata ,  Yoshitaka Tsunashima

发明人： Ichiro Mizushima ,  Shigehiko Saida ,  Takeo Furuhata ,  Yoshitaka Tsunashima

IPC分类号： H01L2976

CPC分类号： H01L29/66477 ,  H01L21/28052 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/665

摘要： SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.

摘要翻译： SiGe或SiC膜选择性地在源极/漏极区域上生长，随后选择性地生长硅。 通过使C或Ge浓度高于预定水平，可以在生长硅膜时生长具有高位错密度的单晶膜或多晶膜。 源极/漏极区域中的每一个上的硅层不是单晶的，即使单晶也具有高密度的位错。 因此，其上形成的硅膜是具有高位错密度的单晶硅膜或多晶硅膜的形式。 可以通过离子注入来抑制在掺杂步骤中产生的离子的沟道引起的深度区域的杂质扩散。

公开(公告)号：US06713359B1

公开(公告)日：2004-03-30

申请号：US09564191

申请日：2000-05-04

申请人： Ichiro Mizushima ,  Shigehiko Saida ,  Takeo Furuhata ,  Yoshitaka Tsunashima

发明人： Ichiro Mizushima ,  Shigehiko Saida ,  Takeo Furuhata ,  Yoshitaka Tsunashima

IPC分类号： H01L21336

CPC分类号： H01L29/66477 ,  H01L21/28052 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/665

摘要： SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.

摘要翻译： SiGe或SiC膜选择性地在源极/漏极区域上生长，随后选择性地生长硅。 通过使C或Ge浓度高于预定水平，可以在生长硅膜时生长具有高位错密度的单晶膜或多晶膜。 源极/漏极区域中的每一个上的硅层不是单晶的，即使单晶也具有高密度的位错。 因此，其上形成的硅膜是具有高位错密度的单晶硅膜或多晶硅膜的形式。 可以通过离子注入来抑制在掺杂步骤中产生的离子的沟道引起的深度区域的杂质扩散。

公开(公告)号：US06284583B1

公开(公告)日：2001-09-04

申请号：US09105024

申请日：1998-06-26

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L218249

CPC分类号： H01L21/3185 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/345 ,  H01L27/10852 ,  H01L27/10861

摘要： A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.

摘要翻译： 半导体器件包括形成在半导体衬底上的半导体衬底和氮化硅膜。 氮化硅膜基本上不含Si-H键，并且每单位面积的Si-H密度为1×10 15 cm -2以下。

公开(公告)号：US20090233451A1

公开(公告)日：2009-09-17

申请号：US12471830

申请日：2009-05-26

申请人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/31

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US20080102616A1

公开(公告)日：2008-05-01

申请号：US11999958

申请日：2007-12-07

申请人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/283

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US20050006675A1

公开(公告)日：2005-01-13

申请号：US10915805

申请日：2004-08-11

申请人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/283 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76 ,  H01L31/062 ,  B21D39/00 ,  H01L31/119

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US07306994B2

公开(公告)日：2007-12-11

申请号：US10915805

申请日：2004-08-11

申请人： Yoshitaka Tsunashima ,  Seiji Inumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Inumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/8234

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US07544593B2

公开(公告)日：2009-06-09

申请号：US11999958

申请日：2007-12-07

申请人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。