公开(公告)号：US20190318937A1

公开(公告)日：2019-10-17

申请号：US16379912

申请日：2019-04-10

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/311 ,  H01L21/67

Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.

公开(公告)号：US10403492B1

公开(公告)日：2019-09-03

申请号：US16216006

申请日：2018-12-11

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/285

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

公开(公告)号：US20190198301A1

公开(公告)日：2019-06-27

申请号：US16218931

申请日：2018-12-13

Applicant: Mattson Technology, Inc.

Inventor： Shawming Ma ,  Hua Chung ,  Michael X. Yang ,  Dixit V. Desai ,  Ryan M. Pakulski

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/687

CPC classification number: H01J37/32899 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3341 ,  H01J2237/3342 ,  H01J2237/3345 ,  H01L21/3065 ,  H01L21/68742

Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.

公开(公告)号：US20190103270A1

公开(公告)日：2019-04-04

申请号：US15958635

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/768

Abstract: Surface treatment processes for treating low-k dielectric materials are provided. One example implementation can include a method for processing a workpiece. The workpiece can include a silicon and carbon containing film material. The method can include treating the workpiece with a surface treatment process. The surface treatment process can include generating one or more species in a first chamber; mixing one or more hydrocarbon molecules with the species to create a mixture comprising one or more organic radicals; and exposing the silicon and carbon containing layer on the workpiece to the mixture in a second chamber.

公开(公告)号：US11495456B2

公开(公告)日：2022-11-08

申请号：US16589270

申请日：2019-10-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: C23C16/02 ,  H01L21/02 ,  C23C16/50 ,  C23C16/458

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

公开(公告)号：US11495437B2

公开(公告)日：2022-11-08

申请号：US16878661

申请日：2020-05-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/02

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

公开(公告)号：US20220059321A1

公开(公告)日：2022-02-24

申请号：US17516065

申请日：2021-11-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C01B3/02

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

公开(公告)号：US20210343506A1

公开(公告)日：2021-11-04

申请号：US17245803

申请日：2021-04-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Haochen Li ,  Shuang Meng ,  Qiqun Zhang ,  Dave Kohl ,  Shawming Ma ,  Haichun Yang ,  Hua Chung ,  Ryan M. Pakulski ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.

公开(公告)号：US11164742B2

公开(公告)日：2021-11-02

申请号：US16861900

申请日：2020-04-29

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/02

Abstract: Processes for selective deposition of material on a workpiece are provided. In one example, the method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has a first material and a second material. The second material is different from the first material. The method includes performing an organic radical based surface treatment process on the workpiece to modify an adsorption characteristic of the first material selectively relative to the second material such that the first material has a first adsorption characteristic and the second material has a second adsorption characteristic. The second adsorption characteristic being different from the first adsorption characteristic. The method includes performing a deposition process on the workpiece such that a material is selectively deposited on the first material relative to the second material.

公开(公告)号：US11164725B2

公开(公告)日：2021-11-02

申请号：US16420542

申请日：2019-05-23

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/22 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C01B3/02 ,  H01J37/32

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.