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公开(公告)号:US20110260361A1
公开(公告)日:2011-10-27
申请号:US13095514
申请日:2011-04-27
申请人: Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人: Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
CPC分类号: B29C59/02 , B29C45/76 , B29L2007/001 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/877
摘要: Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.
摘要翻译: 通过选择模板和/或衬底厚度(Tt和/或Tb),模板和/或衬底背压(Pt和/或Pb)的控制来控制模板和衬底之间的横向应变和横向应变比(dt / db) )和/或材料刚度的选择。
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公开(公告)号:US20100102029A1
公开(公告)日:2010-04-29
申请号:US12604866
申请日:2009-10-23
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/0017 , Y10T156/10
摘要: Systems, methods, and processes for forming imprint lithography templates from a multi-layer substrate are described. The multi-layer substrate may include a block copolymer layer positioned on a substrate layer. The block copolymer layer may include two or more domains. At least one domain may have a different composition sensitivity than another domain such that the domains have different reactions to a specific process. Reaction of the domains to the specific process may provide a pattern in the block copolymer layer. The pattern may be transferred into the substrate layer to form the imprint lithography template.
摘要翻译: 描述了用于从多层基板形成压印光刻模板的系统,方法和工艺。 多层基材可以包括位于基材层上的嵌段共聚物层。 嵌段共聚物层可以包括两个或更多个结构域。 至少一个结构域可能具有与另一个结构域不同的组成敏感性,使得这些结构域对特定过程具有不同的反应。 结构域与特定方法的反应可以提供嵌段共聚物层中的图案。 该图案可以被转移到基底层中以形成压印光刻模板。
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公开(公告)号:US20100112310A1
公开(公告)日:2010-05-06
申请号:US12607547
申请日:2009-10-28
申请人: Van Nguyen Truskett , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Benjamin G. Eynon, JR. , Byung-Jin Choi , Kosta S. Selinidis , Sidlgata V. Sreenivasan , Nicholas A. Stacey
发明人: Van Nguyen Truskett , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Benjamin G. Eynon, JR. , Byung-Jin Choi , Kosta S. Selinidis , Sidlgata V. Sreenivasan , Nicholas A. Stacey
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F9/708 , G03F9/7084 , Y10T428/24802
摘要: Systems and methods for providing identification patterns on substrates are described.
摘要翻译: 描述了在基板上提供识别图案的系统和方法。
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公开(公告)号:US20120187085A1
公开(公告)日:2012-07-26
申请号:US13441500
申请日:2012-04-06
申请人: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号: B44C1/22
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00
摘要: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译: 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号:US08545709B2
公开(公告)日:2013-10-01
申请号:US13441500
申请日:2012-04-06
申请人: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号: C03C15/00
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00
摘要: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译: 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号:US20090212012A1
公开(公告)日:2009-08-27
申请号:US12392685
申请日:2009-02-25
申请人: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人: Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00
摘要: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译: 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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17.
公开(公告)号:US20110180127A1
公开(公告)日:2011-07-28
申请号:US13016006
申请日:2011-01-28
申请人: Fen Wan , Shuqiang Yang , Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Michael N. Miller , Darren D. Donaldson
发明人: Fen Wan , Shuqiang Yang , Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Michael N. Miller , Darren D. Donaldson
IPC分类号: H01L31/02 , H01L31/0232
CPC分类号: H01L51/4213 , B82Y10/00 , H01L51/0017 , H01L51/0037 , H01L51/0047 , H01L51/442 , H01L51/447 , Y02E10/549
摘要: Fabricating a solar cell stack includes forming a nanopatterned polymeric layer on a first surface of a silicon wafer and etching the first surface of the silicon wafer to transfer a pattern of the nanopatterned polymeric layer to the first surface of the silicon wafer. A layer of reflective electrode material is formed on a second surface of the silicon wafer. The nanopatterned first surface of the silicon wafer undergoes a buffered oxide etching. After the buffered oxide etching, the nanopatterned first surface of the silicon wafer is treated to decrease a contact angle of water on the nanopatterned first surface. Electron donor material is deposited on the nanopatterned first surface of the silicon wafer to form an electron donor layer, and a transparent electrode material is deposited on the electron donor layer to form a transparent electrode layer on the electron donor layer.
摘要翻译: 制造太阳能电池堆包括在硅晶片的第一表面上形成纳米图案的聚合物层并蚀刻硅晶片的第一表面以将纳米图案化的聚合物层的图案转移到硅晶片的第一表面。 在硅晶片的第二表面上形成反射电极材料层。 硅晶片的纳米图案化的第一表面经历缓冲氧化物蚀刻。 在缓冲氧化物蚀刻之后,处理硅晶片的纳米图案化的第一表面以降低纳米图案化的第一表面上的水的接触角。 电子给体材料沉积在硅晶片的纳米图案化的第一表面上以形成电子供体层,并且在电子给体层上沉积透明电极材料,以在电子给体层上形成透明电极层。
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公开(公告)号:US20100078846A1
公开(公告)日:2010-04-01
申请号:US12568730
申请日:2009-09-29
申请人: Douglas J. Resnick , Ian Matthew McMackin , Gerard M. Schmid , Niyaz Khusnatdinov , Ecron D. Thompson , Sidlgata V. Sreenivasan
发明人: Douglas J. Resnick , Ian Matthew McMackin , Gerard M. Schmid , Niyaz Khusnatdinov , Ecron D. Thompson , Sidlgata V. Sreenivasan
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/0017
摘要: Particles may be present on substrates and/or templates during nano-lithographic imprinting. Particles may be mitigated and/or removed using localized removal techniques and/or imprinting techniques as described.
摘要翻译: 在纳米光刻印迹过程中,颗粒可能存在于底物和/或模板上。 可以使用如所述的局部去除技术和/或印记技术来减轻和/或去除颗粒。
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公开(公告)号:US08828297B2
公开(公告)日:2014-09-09
申请号:US13290770
申请日:2011-11-07
CPC分类号: B29C59/022 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L29/0673
摘要: Methods of making nano-scale structures with geometric cross-sections, including convex or non-convex cross-sections, are described. The approach may be used to directly pattern substrates and/or create imprint lithography templates or molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates, such as into a functional or sacrificial resist to form functional nanoparticles.
摘要翻译: 描述了制造具有几何横截面的纳米级结构的方法,包括凸形或非凸形横截面。 该方法可以用于直接图案化衬底和/或创建压印光刻模板或模具,其可以随后用于将纳米形图案直接复制到其它衬底中,例如形成功能性或牺牲抗蚀剂以形成功能纳米颗粒。
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20.
公开(公告)号:US20090140458A1
公开(公告)日:2009-06-04
申请号:US12275998
申请日:2008-11-21
申请人: Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
发明人: Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/249978
摘要: An imprint lithography template or imprinting stack includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. A porosity of the porous material is at least about 10%. The porous template, the porous imprinting stack, or both may be used in an imprint lithography process to facilitate diffusion of gas trapped between the template and the imprinting stack into the template, the imprinting stack or both, such that polymerizable material between the imprinting stack and the template rapidly forms a substantially continuous layer between the imprinting stack and the template.
摘要翻译: 压印光刻模板或压印叠层包括限定平均孔径至少约0.4nm的多个孔的多孔材料。 多孔材料的孔隙率至少约为10%。 多孔模板,多孔印迹叠层或两者可用于压印光刻工艺,以便于将模板和压印叠层之间的气体扩散到模板,压印叠层或两者中,使得压印叠层之间的可聚合材料 并且模板在压印堆栈和模板之间快速形成基本上连续的层。
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