Imprint Lithography Template
    12.
    发明申请
    Imprint Lithography Template 有权
    印记平版印刷版

    公开(公告)号:US20100102029A1

    公开(公告)日:2010-04-29

    申请号:US12604866

    申请日:2009-10-23

    IPC分类号: B44C1/22 B05D5/00 B32B37/02

    摘要: Systems, methods, and processes for forming imprint lithography templates from a multi-layer substrate are described. The multi-layer substrate may include a block copolymer layer positioned on a substrate layer. The block copolymer layer may include two or more domains. At least one domain may have a different composition sensitivity than another domain such that the domains have different reactions to a specific process. Reaction of the domains to the specific process may provide a pattern in the block copolymer layer. The pattern may be transferred into the substrate layer to form the imprint lithography template.

    摘要翻译: 描述了用于从多层基板形成压印光刻模板的系统,方法和工艺。 多层基材可以包括位于基材层上的嵌段共聚物层。 嵌段共聚物层可以包括两个或更多个结构域。 至少一个结构域可能具有与另一个结构域不同的组成敏感性,使得这些结构域对特定过程具有不同的反应。 结构域与特定方法的反应可以提供嵌段共聚物层中的图案。 该图案可以被转移到基底层中以形成压印光刻模板。

    SOLAR CELL FABRICATION BY NANOIMPRINT LITHOGRAPHY
    17.
    发明申请
    SOLAR CELL FABRICATION BY NANOIMPRINT LITHOGRAPHY 审中-公开
    太阳能电池制造NANOIMPRINT LITHOGRAPHY

    公开(公告)号:US20110180127A1

    公开(公告)日:2011-07-28

    申请号:US13016006

    申请日:2011-01-28

    IPC分类号: H01L31/02 H01L31/0232

    摘要: Fabricating a solar cell stack includes forming a nanopatterned polymeric layer on a first surface of a silicon wafer and etching the first surface of the silicon wafer to transfer a pattern of the nanopatterned polymeric layer to the first surface of the silicon wafer. A layer of reflective electrode material is formed on a second surface of the silicon wafer. The nanopatterned first surface of the silicon wafer undergoes a buffered oxide etching. After the buffered oxide etching, the nanopatterned first surface of the silicon wafer is treated to decrease a contact angle of water on the nanopatterned first surface. Electron donor material is deposited on the nanopatterned first surface of the silicon wafer to form an electron donor layer, and a transparent electrode material is deposited on the electron donor layer to form a transparent electrode layer on the electron donor layer.

    摘要翻译: 制造太阳能电池堆包括在硅晶片的第一表面上形成纳米图案的聚合物层并蚀刻硅晶片的第一表面以将纳米图案化的聚合物层的图案转移到硅晶片的第一表面。 在硅晶片的第二表面上形成反射电极材料层。 硅晶片的纳米图案化的第一表面经历缓冲氧化物蚀刻。 在缓冲氧化物蚀刻之后,处理硅晶片的纳米图案化的第一表面以降低纳米图案化的第一表面上的水的接触角。 电子给体材料沉积在硅晶片的纳米图案化的第一表面上以形成电子供体层,并且在电子给体层上沉积透明电极材料,以在电子给体层上形成透明电极层。