公开(公告)号：US20140247476A1

公开(公告)日：2014-09-04

申请号：US14277323

申请日：2014-05-14

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Jianming Zhou ,  Scott L. Light ,  Anton deVilliers ,  Kaveri Jain ,  Zishu Zhang ,  Dan Millward

IPC: G02B26/06

CPC classification number: G02B26/06 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70308 ,  G03F7/705 ,  G03F7/706

Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.

Abstract translation: 一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。 这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。 所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。 可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。 描述其他实施例。

公开(公告)号：US20160315223A1

公开(公告)日：2016-10-27

申请号：US15201041

申请日：2016-07-01

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L33/22 ,  H01L33/00 ,  G02F1/1333 ,  H01L33/32

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

公开(公告)号：US09653315B2

公开(公告)日：2017-05-16

申请号：US14445478

申请日：2014-07-29

Applicant: Micron Technology, Inc.

Inventor： Scott Sills ,  Gurtej S. Sandhu ,  Anton deVilliers

IPC: H01L21/302 ,  H01L21/308 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/3088 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/31138

Abstract: A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.

公开(公告)号：US09112104B2

公开(公告)日：2015-08-18

申请号：US14299742

申请日：2014-06-09

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L21/02 ,  H01L33/22 ,  C30B29/40 ,  C30B33/00 ,  H01L21/308 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

Abstract translation: 描述了外延生长方法和装置，其包括在基底上的纹理表面。 纹理表面的几何提供外延材料和衬底之间的减小的晶格失配。 通过所述方法形成的装置与不形成纹理的装置相比，表现出更好的界面粘合性和较低的缺陷密度 硅衬底被示出为具有氮化镓外延生长，并且诸如LED的器件形成在氮化镓内。

公开(公告)号：US20130256692A1

公开(公告)日：2013-10-03

申请号：US13901767

申请日：2013-05-24

Applicant: Micron Technology, Inc.

Inventor： Anton deVilliers ,  Erik Byers ,  Scott E. Sills

IPC: H01L33/22

CPC classification number: H01L33/22 ,  C30B29/406 ,  C30B33/00 ,  G02F1/133377 ,  G02F2202/10 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3086 ,  H01L33/0008 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.