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    ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE
    11.
    发明申请
    ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE 有权

    公开(公告)号：US20210027813A1

    公开(公告)日：2021-01-28

    申请号：US16518876

    申请日：2019-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Boniardi ,  Richard K. Dodge ,  Innocenzo Tortorelli ,  Mattia Robustelli ,  Mario Allegra

    IPC: G11C7/10

    Abstract: Methods, systems, and devices for adaptive write operations for a memory device are described. In an example, the described techniques may include identifying a quantity of access operations performed on a memory array, modifying one or more parameters for a write operation based on the identified quantity of access operations, and writing logic states to the memory array by performing the write operation according to the one or more modified parameters. In some examples, the memory array may include memory cells associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time (e.g., due to accumulated access operations).

    Adaptive write operations for a memory device
    16.
    发明授权
    Adaptive write operations for a memory device 有权

    公开(公告)号：US11158358B2

    公开(公告)日：2021-10-26

    申请号：US16518876

    申请日：2019-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Boniardi ,  Richard K. Dodge ,  Innocenzo Tortorelli ,  Mattia Robustelli ,  Mario Allegra

    IPC: G11C7/10

    Abstract: Methods, systems, and devices for adaptive write operations for a memory device are described. In an example, the described techniques may include identifying a quantity of access operations performed on a memory array, modifying one or more parameters for a write operation based on the identified quantity of access operations, and writing logic states to the memory array by performing the write operation according to the one or more modified parameters. In some examples, the memory array may include memory cells associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time (e.g., due to accumulated access operations).

    ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE
    17.
    发明公开
    ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE 审中-公开

    公开(公告)号：US20240203468A1

    公开(公告)日：2024-06-20

    申请号：US18593635

    申请日：2024-03-01

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Boniardi ,  Richard K. Dodge ,  Innocenzo Tortorelli ,  Mattia Robustelli ,  Mario Allegra

    IPC: G11C7/10

    CPC classification number: G11C7/1096 ,  G11C7/1051

    Abstract: Methods, systems, and devices for adaptive write operations for a memory device are described. In an example, the described techniques may include identifying a quantity of access operations performed on a memory array, modifying one or more parameters for a write operation based on the identified quantity of access operations, and writing logic states to the memory array by performing the write operation according to the one or more modified parameters. In some examples, the memory array may include memory cells associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time (e.g., due to accumulated access operations).

    PROGRAMMING MEMORY CELLS USING ASYMMETRIC CURRENT PULSES
    18.
    发明申请
    PROGRAMMING MEMORY CELLS USING ASYMMETRIC CURRENT PULSES 有权

    公开(公告)号：US20220122664A1

    公开(公告)日：2022-04-21

    申请号：US17567679

    申请日：2022-01-03

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Robustelli ,  Innocenzo Tortorelli ,  Richard K. Dodge

    IPC: G11C13/00

    Abstract: The present disclosure includes apparatuses and methods for programming memory cells using asymmetric current pulses. An embodiment includes a memory having a plurality of self-selecting memory cells, and circuitry configured to program a self-selecting memory cell of the memory by applying a first current pulse or a second current pulse to the self-selecting memory cell, wherein the first current pulse is applied for a longer amount of time than the second current pulse and the first current pulse has a lower amplitude than the second current pulse.

    ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE
    19.
    发明申请
    ADAPTIVE WRITE OPERATIONS FOR A MEMORY DEVICE 有权

    公开(公告)号：US20220108732A1

    公开(公告)日：2022-04-07

    申请号：US17502481

    申请日：2021-10-15

    Applicant: Micron Technology, Inc.

    Inventor： Mattia Boniardi ,  Richard K. Dodge ,  Innocenzo Tortorelli ,  Mattia Robustelli ,  Mario Allegra

    IPC: G11C7/10

    Abstract: Methods, systems, and devices for adaptive write operations for a memory device are described. In an example, the described techniques may include identifying a quantity of access operations performed on a memory array, modifying one or more parameters for a write operation based on the identified quantity of access operations, and writing logic states to the memory array by performing the write operation according to the one or more modified parameters. In some examples, the memory array may include memory cells associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time (e.g., due to accumulated access operations).

    MULTI-STATE PROGRAMMING OF MEMORY CELLS
    20.
    发明申请
    MULTI-STATE PROGRAMMING OF MEMORY CELLS 有权

    公开(公告)号：US20210202018A1

    公开(公告)日：2021-07-01

    申请号：US16729787

    申请日：2019-12-30

    Applicant: Micron Technology, Inc.

    Inventor： Jeremy M. Hirst ,  Shanky K. Jain ,  Hernan A. Castro ,  Richard K. Dodge ,  William A. Melton

    IPC: G11C16/34 ,  G11C16/12 ,  G11C16/26

    Abstract: The present disclosure includes apparatuses, methods, and systems for multi-state programming of memory cells. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to program a memory cell of the plurality of memory cells to one of a plurality of possible data states by applying a voltage pulse to the memory cell, determining the memory cell snaps back in response to the applied voltage pulse, turning off a current to the memory cell upon determining the memory cell snaps back, and applying a number of additional voltage pulses to the memory cell after turning off the current to the memory cell.

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