公开(公告)号：US20150380084A1

公开(公告)日：2015-12-31

申请号：US14850662

申请日：2015-09-10

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0095 ,  H01L45/06 ,  H01L45/12 ,  H01L45/126 ,  H01L45/144

Abstract: Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material.

Abstract translation: 形成和操作相变存储器件的方法包括调节存储器单元中的相变材料的亚稳相和稳定相之间的激活能垒。 在一些实施例中，通过对存储单元中的相变材料施加应力来调节激活能垒。 存储器件包括相变存储器单元和用于向存储单元中的相变材料施加应力的材料，结构或器件。 在一些实施例中，可以使用压电装置将应力施加到相变材料上。 在另外的实施例中，可以定位具有大于相变材料的热膨胀系数的材料，以将应力施加到相变材料上。

公开(公告)号：US20150340372A1

公开(公告)日：2015-11-26

申请号：US14282520

申请日：2014-05-20

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

IPC: H01L27/115 ,  H01L49/02

CPC classification number: H01L27/11507 ,  H01L21/28291 ,  H01L27/1159 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

Abstract translation: 铁电存储器件包括多个存储单元。 每个存储单元包括设置在至少一个电极附近的至少一个电极和铁电晶体材料。 铁电晶体材料可以通过能够通过对至少一个电极进行充电而产生的电场来极化。 铁电晶体材料包括极性和手性晶体结构，通过反转中心不具有反转对称性。 铁电晶体材料基本上不包括铪（Hf）和锆（Zr）中的至少一种的氧化物。

公开(公告)号：US08790987B2

公开(公告)日：2014-07-29

申请号：US13718163

申请日：2012-12-18

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Roy E. Meade

IPC: H01L21/02

CPC classification number: H01L45/1666 ,  H01L21/76834 ,  H01L21/76883 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1675

Abstract: Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components.

Abstract translation: 一些实施例包括形成电气部件的方法。 第一和第二暴露的表面构型形成在第一结构上，然后在表面构型上形成材料。 该材料在两个或更多个结构域之间被细分，其中第一个域由第一表面构型诱导，并且第二个域被第二表面构型诱导。 然后在材料上形成第二结构。 材料的第一个结构域被并入到电气部件中。 第二区域可以用电介质材料代替以在相邻的电气部件之间提供隔离，或者可以用作相邻电气部件之间的中间区域。

公开(公告)号：US20140192604A1

公开(公告)日：2014-07-10

申请号：US14171243

申请日：2014-02-03

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy E. Meade ,  John K. Zahurak

IPC: G11C7/12

CPC classification number: G11C7/12 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0038 ,  G11C13/0061 ,  G11C13/0069

Abstract: Methods, devices, and systems associated with memory cell operation are described. One or more methods of operating a memory cell include charging a capacitor coupled to the memory cell to a particular voltage level and programming the memory cell from a first state to a second state by controlling discharge of the capacitor through a resistive switching element of the memory cell.

Abstract translation: 描述与存储器单元操作相关联的方法，设备和系统。 操作存储器单元的一种或多种方法包括将耦合到存储器单元的电容器充电到特定的电压电平，并且通过控制存储器的电阻式开关元件的电容器的放电来将存储器单元从第一状态编程到第二状态 细胞。

公开(公告)号：US20130130466A1

公开(公告)日：2013-05-23

申请号：US13718163

申请日：2012-12-18

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Scott E. Sills ,  Roy E. Meade

IPC: H01L45/00

CPC classification number: H01L45/1666 ,  H01L21/76834 ,  H01L21/76883 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/147 ,  H01L45/1608 ,  H01L45/1675

Abstract: Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components.

Abstract translation: 一些实施例包括形成电气部件的方法。 第一和第二暴露的表面构型形成在第一结构上，然后在表面构型上形成材料。 该材料在两个或更多个结构域之间被细分，其中第一个域由第一表面构型诱导，并且第二个域由第二表面构型诱导。 然后在材料上形成第二结构。 材料的第一个结构域被并入到电气部件中。 第二区域可以用电介质材料代替以在相邻的电气部件之间提供隔离，或者可以用作相邻电气部件之间的中间区域。

公开(公告)号：US20220344160A1

公开(公告)日：2022-10-27

申请号：US17811426

申请日：2022-07-08

Applicant: Micron Technology, Inc

Inventor： Roy E. Meade ,  Sumeet C. Pandey

IPC: H01L21/268 ,  H01L21/428 ,  H01L21/02 ,  H01L21/477 ,  H01L29/06

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

公开(公告)号：US20190311760A1

公开(公告)日：2019-10-10

申请号：US16438057

申请日：2019-06-11

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G11C11/24 ,  H01L45/00 ,  G11C8/08 ,  G11C13/00 ,  G11C11/56 ,  H01L49/02 ,  H01L27/10 ,  G11C11/34

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

公开(公告)号：US10215921B2

公开(公告)日：2019-02-26

申请号：US15648326

申请日：2017-07-12

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: G02B6/122 ,  G02B6/136 ,  H01L21/762 ,  H01L21/84 ,  G02B6/12

Abstract: Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

公开(公告)号：US20180188647A1

公开(公告)日：2018-07-05

申请号：US15908355

申请日：2018-02-28

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Gurtej S. Sandhu

IPC: G03F7/00 ,  G02B6/00 ,  G03F7/20

CPC classification number: G03F7/0005 ,  G02B6/00 ,  G02B6/136 ,  G03F7/70283

Abstract: A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described.

公开(公告)号：US09921471B2

公开(公告)日：2018-03-20

申请号：US14495278

申请日：2014-09-24

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Gurtej S. Sandhu

IPC: G03F7/00 ,  G03F7/20 ,  G02B6/00

CPC classification number: G03F7/0005 ,  G02B6/00 ,  G03F7/70283

Abstract: A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described.