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公开(公告)号:US08344412B2
公开(公告)日:2013-01-01
申请号:US12648911
申请日:2009-12-29
申请人: Chia-Liang Hsu , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
发明人: Chia-Liang Hsu , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
IPC分类号: H01L33/00
CPC分类号: H01L33/385 , H01L33/62 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要: The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.
摘要翻译: 本申请公开了一种发光二极管芯片级封装结构,包括:具有第一表面和第二表面的永久基板; 第一表面上的第一电极; 在第二表面上的第二电极; 在永久性基板的第一表面未被第一电极覆盖的粘合剂层上; 粘合剂层上的生长衬底; 生长衬底上的图案化半导体结构; 图案化半导体结构上的第三电极和第四电极,并与图案化的半导体结构电连接; 所述图案化半导体结构的侧壁上的电连接结构将所述第三电极和所述第四电极与所述第一电极电连接; 以及位于图案化半导体结构的侧壁上以及用于使图案化半导体结构电绝缘的电连接结构之间的绝缘层。
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公开(公告)号:US20120261695A1
公开(公告)日:2012-10-18
申请号:US13307899
申请日:2011-11-30
申请人: Yi-Ming Chen , Min-Hsun Hsieh , Chia-Liang Hsu
发明人: Yi-Ming Chen , Min-Hsun Hsieh , Chia-Liang Hsu
IPC分类号: H01L33/10
CPC分类号: H01L33/08 , H01L33/0079 , H01L33/10 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer.
摘要翻译: 发光装置包括第一电极; 在第一电极上的发光堆叠层; 在所述发光层叠层上的第一接触层,其中所述第一接触层包括第一接触链和连接到所述第一接触链的多个第一接触线; 在所述发光层叠层中的第一导电柱,并且电连接所述第一电极和所述第一接触层; 以及第一导电柱和发光层叠层之间的钝化层。
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公开(公告)号:US08263998B2
公开(公告)日:2012-09-11
申请号:US13009491
申请日:2011-01-19
申请人: Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人: Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号: H01L33/22
CPC分类号: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译: 一种发光器件,包括半导体发光堆叠,包括发光区域; 形成在所述半导体发光叠层上的电极,其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。
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公开(公告)号:US20120055532A1
公开(公告)日:2012-03-08
申请号:US13226095
申请日:2011-09-06
申请人: Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人: Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号: H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号: H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要: A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译: 半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠,包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层,以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。
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公开(公告)号:US07906795B2
公开(公告)日:2011-03-15
申请号:US12437908
申请日:2009-05-08
申请人: Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人: Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号: H01L33/00
CPC分类号: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译: 一种发光器件,包括半导体发光堆叠,包括发光区域; 形成在所述半导体发光叠层上的电极,其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。
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公开(公告)号:US08110845B2
公开(公告)日:2012-02-07
申请号:US13181222
申请日:2011-07-12
申请人: Chia-Liang Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Fu Huang
发明人: Chia-Liang Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Fu Huang
IPC分类号: H01L33/00
CPC分类号: H01L33/0079 , H01L33/405 , H01L33/46
摘要: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.
摘要翻译: 该应用涉及通过复合电镀形成发光二极管的基板的方法。 本发明示出了包括以下元件的发光二极管:发光外延结构,设置在发光外延结构上的反射层,设置在反射层上的种子层,设置在种子层上的复合电镀基板 通过复合电镀,以及设置在复合电镀基板上的保护层。
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公开(公告)号:US20110108879A1
公开(公告)日:2011-05-12
申请号:US13009491
申请日:2011-01-19
申请人: Chien-Fu HUANG , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人: Chien-Fu HUANG , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号: H01L33/22
CPC分类号: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译: 一种发光器件,包括半导体发光堆叠,包括发光区域; 形成在所述半导体发光叠层上的电极,其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。
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公开(公告)号:US09601657B2
公开(公告)日:2017-03-21
申请号:US13050444
申请日:2011-03-17
申请人: Chia-Liang Hsu
发明人: Chia-Liang Hsu
CPC分类号: H01L33/02 , H01L33/0079 , H01L33/10 , H01L33/38 , H01L33/382 , H01L33/385
摘要: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.
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公开(公告)号:US20130273673A1
公开(公告)日:2013-10-17
申请号:US13446228
申请日:2012-04-13
申请人: Chia-Liang Hsu , Chih-Chiang Lu
发明人: Chia-Liang Hsu , Chih-Chiang Lu
CPC分类号: H01L33/0095 , G01R31/2635 , H01L27/156
摘要: A method for forming a light-emitting device of the present application comprises providing a wafer; forming a first plurality of light-emitting elements on the wafer; providing a first connection structure to connect each of the first plurality of light-emitting elements; and applying a current flow to one of the first plurality of light-emitting elements for testing at least one electrical property of the light-emitting element while no current flow is applied to the remaining of the first plurality of light-emitting elements.
摘要翻译: 本申请的发光装置的形成方法包括提供晶片; 在晶片上形成第一组多个发光元件; 提供第一连接结构以连接所述第一多个发光元件中的每一个; 以及向所述第一多个发光元件中的一个施加电流,以测试所述发光元件的至少一个电特性,同时不向所述第一多个发光元件的剩余部分施加电流。
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公开(公告)号:US08283683B2
公开(公告)日:2012-10-09
申请号:US12629030
申请日:2009-12-01
申请人: Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
发明人: Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
IPC分类号: H01L33/00
CPC分类号: H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012
摘要: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.
摘要翻译: 发光二极管芯片包括永久性基板,其具有形成在永久基板上的保持空间; 绝缘层和顺序地形成在永久性基板和保持间隔物上的金属层; 具有共晶层和发光区域的管芯,并通过耦合到金属层的共晶层与保持空间内的金属层接合; 填充在所述保持空间和所述模具之间的填充结构; 以及形成在管芯上并与发光区域接触的电极。
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