摘要:
The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.
摘要:
The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.
摘要:
This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
摘要:
This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
摘要:
This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
摘要:
A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.
摘要:
A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
摘要:
The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.
摘要:
A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要:
A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.