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    Water cooled gas injector
    11.
    发明申请
    Water cooled gas injector 失效
    水冷气体注射器

    公开(公告)号：US20120031332A1

    公开(公告)日：2012-02-09

    申请号：US13277385

    申请日：2011-10-20

    申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

    IPC分类号： C23C16/00 ,  H01L21/31

    CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

    摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

    摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

    Methods for oxidation of a semiconductor device
    14.
    发明授权
    Methods for oxidation of a semiconductor device 有权
    氧化半导体器件的方法

    公开(公告)号：US08207044B2

    公开(公告)日：2012-06-26

    申请号：US13110613

    申请日：2011-05-18

    申请人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    发明人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    IPC分类号： H01L21/331

    CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31683 ,  H01L21/32105

    摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

    摘要翻译： 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层， 含有气体或含氮气体。

    Methods for oxidation of a semiconductor device
    16.
    发明授权
    Methods for oxidation of a semiconductor device 有权
    氧化半导体器件的方法

    公开(公告)号：US07947561B2

    公开(公告)日：2011-05-24

    申请号：US12401895

    申请日：2009-03-11

    申请人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    发明人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    IPC分类号： H01L21/00

    CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31683 ,  H01L21/32105

    摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

    摘要翻译： 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层， 含有气体或含氮气体。

    Method and apparatus for single step selective nitridation
    17.
    发明授权
    Method and apparatus for single step selective nitridation 有权
    单步选择性氮化的方法和装置

    公开(公告)号：US08748259B2

    公开(公告)日：2014-06-10

    申请号：US13033330

    申请日：2011-02-23

    申请人： Udayan Ganguly ,  Theresa Kramer Guarini ,  Matthew Scott Rogers ,  Yoshitaka Yokota ,  Johanes S. Swenberg ,  Malcolm J. Bevan

    发明人： Udayan Ganguly ,  Theresa Kramer Guarini ,  Matthew Scott Rogers ,  Yoshitaka Yokota ,  Johanes S. Swenberg ,  Malcolm J. Bevan

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02247 ,  H01L21/02362 ,  H01L21/28202 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

    摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

    摘要翻译： 提供了半导体衬底选择性一步氮化的方法和装置。 通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。 可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。 远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成 区域和基板支撑。

    UV assisted thermal processing
    19.
    发明授权
    UV assisted thermal processing 失效
    UV辅助热处理

    公开(公告)号：US07547633B2

    公开(公告)日：2009-06-16

    申请号：US11414869

    申请日：2006-05-01

    申请人： Joseph Michael Ranish ,  Yoshitaka Yokota

    发明人： Joseph Michael Ranish ,  Yoshitaka Yokota

    IPC分类号： H01L21/31

    CPC分类号： H01L21/67115

    摘要： The present invention provides methods and apparatus for performing thermal processes to a semiconductor substrate. Thermal processing chambers of the present invention comprise two different energy sources, such as an infrared radiation source and a UV radiation source. The UV radiation source and the infrared radiation source may be used alone or in combination to supply heat, activate electronic, or create active species inside the thermal processing chamber.

    摘要翻译： 本发明提供了对半导体衬底进行热处理的方法和装置。 本发明的热处理室包括两种不同的能量源，例如红外辐射源和UV辐射源。 UV辐射源和红外辐射源可以单独使用或组合使用以在热处理室内提供热量，激活电子或产生活性物质。