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公开(公告)号：US07491482B2
公开(公告)日：2009-02-17
申请号：US11566312
申请日：2006-12-04
CPC分类号： C07C381/12 , G03F7/0045 , G03F7/0392 , Y10S430/122 , Y10S430/126
摘要： The present application relates to a compound of formula AiXi where Ai is an organic onium cation; and Xi is an anion of the formula X—CF2CF2OCF2CF2—SO3−. The compounds are useful as photoactive materials.
摘要翻译： 本申请涉及式AiXi的化合物，其中A 1是有机鎓阳离子; 而X 1为式X-CF 2 CF 2 OCF 2 CF 2 -SO 3 - 的阴离子。 这些化合物可用作光敏材料。
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公开(公告)号：US07537879B2
公开(公告)日：2009-05-26
申请号：US10994745
申请日：2004-11-22
申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
发明人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
摘要翻译： 本发明涉及一种对300nm至100nm之间的波长敏感的新型化学放大光致抗蚀剂，并且包括a）一种新型聚合物，其包含不溶于碱性水溶液的聚合物主链的侧基的砜基， 用酸不稳定基团保护的至少一个酸性部分，和b）在照射时能够产生酸的化合物。 本发明还涉及对新型正性光致抗蚀剂组合物进行成像的方法。
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公开(公告)号：US06447980B1
公开(公告)日：2002-09-10
申请号：US09619336
申请日：2000-07-19
IPC分类号： G03C1492
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0395 , Y10S430/115
摘要： The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.
摘要翻译： 本发明涉及一种化学放大系统，其对300nm至100nm之间的波长敏感，并且包括a）不溶于碱性水溶液并且包含至少一种酸不稳定基团的聚合物，b）具有能力的化合物 在辐射时产生酸。 本发明包括由脂环烃烯烃，具有侧链环状的丙烯酸酯和环状酸酐制成的聚合物。 本发明还涉及这种光致抗蚀剂的成像方法。
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公开(公告)号：US20090042148A1
公开(公告)日：2009-02-12
申请号：US11834490
申请日：2007-08-06
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist.
摘要翻译： 本发明涉及一种光致抗蚀剂组合物，其包含（i）包含至少一种酸不稳定基团的聚合物A; （ii）至少一种光致酸发生剂; （iii）至少一个碱基; （iv）聚合物B，其中聚合物B与聚合物A不可溶并且可溶于涂布溶剂中; （v）涂料溶剂组合物。 本发明还涉及对光刻胶成像的方法。
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公开(公告)号：US20110086312A1
公开(公告)日：2011-04-14
申请号：US12576622
申请日：2009-10-09
申请人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
发明人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
CPC分类号： G03F7/091
摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.
摘要翻译： 本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。 本发明还涉及使用这种组合物的方法。
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公开(公告)号：US5843319A
公开(公告)日：1998-12-01
申请号：US902072
申请日：1997-07-29
申请人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
发明人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
CPC分类号： G03F7/0045 , G03F7/039
摘要： A process for producing a solution of a basic or non-basic sulfonium compound (A) of formulae II-V: ##STR1## wherein R.sup.5, R.sup.6 and R.sup.7 each independently represent a C.sub.1 -C.sub.18 alkyl, aryl or heteroaryl group or an aryl group mono-, di- or tri-substituted with an alkyl, an alkylaryl, an aryl, a halogen, an alkoxy, a phenoxy, a thiophenol, a phenylsulfonyl or a phenylsulphenyl; Y represents (CH.sub.2).sub.n (wherein n is 0 or 1), O or S; R.sup.8 and R.sup.9 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; R.sup.10 and R.sup.11 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; n is 5 or 6; and X.sub.2.sup.- represents a basic anion having a pK.sub.B value of -3 to +5; comprising the steps of: (a) dissolving a sulfonium salt (B) in a metal-ion free polar or non-polar solvent to form a solution, said sulfonium salt (B) being selected from said formulae II-V, wherein R.sup.5 to R.sup.11, Y and n of said sulfonium salt (B) have the sane meaning as above and X.sub.2.sup.- represents a non-nucleophilic anion; (b) contacting said solution for a sufficient amount of time with a basic ion-exchange resin having a quaternary ammonium group to replace the anion of (B) with a hydroxide ion and to form a sulfonium hydroxide solution; (c) separating said sulfonium hydroxide solution from the resin; and optionally (d) adding an active hydrogen containing compound or its base-labile precursor to said sulfonium hydroxide solution to yield a solution of the sulfonium compound (A) wherein X.sub.2.sup.- represents a basic anion other than a hydroxy ion.
摘要翻译： 制备式II-V的碱性或非碱性锍化合物（A）的溶液的方法：[SR5R6R7] + X2-Ⅱ其中R5，R6和R7各自独立地 独立地表示C1-C18烷基，芳基或杂芳基或被烷基，烷基芳基，芳基，卤素，烷氧基，苯氧基，苯硫酚，苯基磺酰基或苯基磺酰基单 - ，二 - 或三 - 取代的芳基 苯基磺酰基; Y表示（CH 2）n（其中n为0或1），O或S; R8和R9代表C1-C4烷基，烷氧基或卤素; R10和R11表示C1-C4烷基，烷氧基或卤素; n为5或6; X2-表示pKB值为-3〜+5的碱性阴离子; 包括以下步骤：（a）将锍盐（B）溶解在无金属离子的极性或非极性溶剂中以形成溶液，所述锍盐（B）选自所述式II-V，其中R5至 所述锍盐（B）的R 11，Y和n具有如上所述的正义，X2-表示非亲核阴离子; （b）用具有季铵基团的碱性离子交换树脂将所述溶液接触足够的时间以用氢氧根离子代替（B）的阴离子并形成氢氧化锍溶液; （c）从树脂中分离出氢氧化锍溶液; 和任选地（d）在所述氢氧化锍溶液中加入含活性氢的化合物或其碱不稳定的前体，得到其中X2代表羟基离子以外的碱性阴离子的锍化合物（A）的溶液。
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公开(公告)号：US20120122029A1
公开(公告)日：2012-05-17
申请号：US12944420
申请日：2010-11-11
摘要： The present invention relates to a photoimageable underlayer composition comprising a polymer, a crosslinker comprising a vinyl ether group, and a thermal acid generator comprising a salt of a mono or polycarboxylic acid and an amine, where the amine has a boiling point of at least 150° C. The invention also relates to a process for forming an image in the underlayer comprising the novel composition.
摘要翻译： 本发明涉及一种可光成像底层组合物，其包含聚合物，包含乙烯基醚基团的交联剂和包含单羧酸和多元羧酸盐和胺的热酸产生剂，其中胺的沸点为至少150 本发明还涉及一种用于在包含新组合物的底层中形成图像的方法。
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公开(公告)号：US07595141B2
公开(公告)日：2009-09-29
申请号：US10973633
申请日：2004-10-26
CPC分类号： G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
摘要翻译： 本发明涉及包含含有氨基的聚合物的光致抗蚀剂图案的水性涂料组合物。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。
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公开(公告)号：US20120308939A1
公开(公告)日：2012-12-06
申请号：US13153765
申请日：2011-06-06
摘要： The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, where Y is selected from an carboxylate anion or sulfonate anion, R1, R2, and R3 are independently selected from unsubstituted C1-C8 alkyl, substituted C1-C8 alkyl, aryl and arylene-hydroxyl; X1, X2, and X3 are independently selected from direct valence bond and C1-C8 alkylene group, and, n=1, 2 or 3. The invention further relates to a process for using the composition.
摘要翻译： 本发明涉及包含交联剂，包含至少一个发色团和至少一个羟基和/或羧基的聚合物和添加剂的抗反射涂料组合物，此外，其中添加剂具有结构1并且包含至少一个 亚芳基 - 羟基部分，其中Y选自羧酸根阴离子或磺酸根阴离子，R 1，R 2和R 3独立地选自未取代的C 1 -C 8烷基，取代的C 1 -C 8烷基，芳基和亚芳基 - 羟基; X1，X2和X3独立地选自直接键键和C1-C8亚烷基，n = 1,2或3.本发明还涉及使用该组合物的方法。
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公开(公告)号：US20090053652A1
公开(公告)日：2009-02-26
申请号：US11844589
申请日：2007-08-24
申请人： Srinivasan Chakrapani , Munirathna Padmanaban , Muthiah Thiyagarajan , Takanori Kudo , David L. Rentkiewicz
发明人： Srinivasan Chakrapani , Munirathna Padmanaban , Muthiah Thiyagarajan , Takanori Kudo , David L. Rentkiewicz
CPC分类号： C08F220/28 , C08F220/18 , G03F7/0397
摘要： Photoresist compositions are disclosed.
摘要翻译： 公开了光致抗蚀剂组合物。
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