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公开(公告)号：US20180152143A1
公开(公告)日：2018-05-31
申请号：US15821054
申请日：2017-11-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Yuri Honda , Kazuo Watanabe , Takashi Soga
CPC classification number: H03F1/0205 , H03F1/0261 , H03F1/22 , H03F1/56 , H03F1/565 , H03F3/195 , H03F3/213 , H03F2200/222 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/516
Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
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公开(公告)号：US20180041169A1
公开(公告)日：2018-02-08
申请号：US15684258
申请日：2017-08-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC classification number: H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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公开(公告)号：US20160134241A1
公开(公告)日：2016-05-12
申请号：US14862865
申请日：2015-09-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC classification number: H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
Abstract translation: 功率放大器在高输出功率下提高了功率附加效率。 功率放大器包括：第一晶体管，用于放大输入到其基极的输入信号并从其集电极输出放大的信号; 第二晶体管，其具有施加到其集电极的电源电压，以将偏置电压或偏置电流从其发射极提供给第一晶体管的基极; 第三晶体管，其集电极连接到第一晶体管的集电极，以放大输入到其基极的输入信号，并从其集电极输出放大的信号; 第四晶体管，其基极和集电极连接以从其发射极向第三晶体管的基极提供偏置; 以及具有施加到其一端的偏置控制电压并且另一端连接到第二和第四晶体管的基极的第一电阻器。
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公开(公告)号：US11658622B2
公开(公告)日：2023-05-23
申请号：US17207879
申请日：2021-03-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Kazuo Watanabe , Yusuke Tanaka , Satoshi Arayashiki
CPC classification number: H03F3/217 , H03F1/0205 , H03F1/565 , H03F3/2171 , H03F2200/171 , H03F2200/387 , H03F2200/451
Abstract: A power amplifier circuit includes a lower transistor having a first terminal, a second terminal connected to ground, and a third terminal, wherein a first power supply voltage is supplied to the first terminal, and an input signal is supplied to the third terminal; a first capacitor; an upper transistor having a first terminal, a second terminal connected to the first terminal of the lower transistor via the first capacitor, and a third terminal, wherein a second power supply voltage is supplied to the first terminal, an amplified signal is outputted to an output terminal from the first terminal, and a driving voltage is supplied to the third terminal; a first inductor that connects the second terminal of the upper transistor to ground; a voltage regulator circuit; and at least one termination circuit that short-circuits an even-order harmonic or odd-order harmonic of the amplified signal to ground potential.
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公开(公告)号：US11616479B2
公开(公告)日：2023-03-28
申请号：US16839226
申请日：2020-04-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Toshikazu Terashima , Fumio Harima , Makoto Itou , Satoshi Tanaka , Kazuo Watanabe , Satoshi Arayashiki , Chikara Yoshida
IPC: H03F3/213 , H01L29/417 , H01L27/06 , H01L29/737 , H01L29/423 , H01L23/48
Abstract: A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.
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Patent Agency Ranking
公开(公告)号：US11258406B2
公开(公告)日：2022-02-22
申请号：US16458409
申请日：2019-07-01
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Masatoshi Hase , Yuri Honda , Kazuo Watanabe , Takashi Soga
Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
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公开(公告)号：US10819286B2
公开(公告)日：2020-10-27
申请号：US16205904
申请日：2018-11-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Tetsuaki Adachi , Kazuo Watanabe , Masahito Numanami , Yasuhisa Yamamoto
Abstract: Provided is a power amplification circuit that includes: an amplifier that amplifies an input signal and outputs an amplified signal; a first bias circuit that supplies a first bias current or voltage to the amplifier; a second bias circuit that supplies a second bias current or voltage to the amplifier; a first control circuit that controls the first bias current or voltage; and a second control circuit that controls the second bias current or voltage. The current supplying capacity of the first bias circuit is different from the current supplying capacity of the second bias circuit.
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公开(公告)号：US10693418B2
公开(公告)日：2020-06-23
申请号：US15585418
申请日：2017-05-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
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公开(公告)号：US09768729B2
公开(公告)日：2017-09-19
申请号：US14862865
申请日：2015-09-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC classification number: H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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公开(公告)号：US20170237400A1
公开(公告)日：2017-08-17
申请号：US15585418
申请日：2017-05-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
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