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公开(公告)号：US20250040322A1
公开(公告)日：2025-01-30
申请号：US18780099
申请日：2024-07-22
Applicant: NICHIA CORPORATION
Inventor： Mitsuo HAMADA , Hiroaki TAMEMOTO , Minoru YAMAMOTO , Ryota TAOKA , Kenta NISHIHARA
IPC: H01L33/58
Abstract: A method of manufacturing an optical member includes: providing a polycrystalline wavelength conversion member including phosphor particles and having a first surface and a second surface opposite to the first surface; forming a modified portion inside the wavelength conversion member by focusing laser light inside the wavelength conversion member; and cleaving the wavelength conversion member with the modified portion being a starting point, which includes pressing the wavelength conversion member from a first surface side.
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公开(公告)号：US20220354063A1
公开(公告)日：2022-11-10
申请号：US17624647
申请日：2020-07-10
Applicant: NICHIA CORPORATION
Inventor： Yasuo FUJIKAWA , Tomohiro TSURUMOTO , Hiroaki TAMEMOTO
Abstract: A plant treatment apparatus includes: a plant holding unit; an ultraviolet irradiation unit configured to irradiate a plant held by the plant holding unit with light comprising ultraviolet light in a wavelength range of no less than 270 nm and no more than 290 nm; and either (i) a plant immersion unit configured to immerse the plant held by the plant holding unit into a liquid that comprises water and is held by the plant immersion unit, or (ii) a liquid ejection unit that ejects the liquid towards the plant held by the plant holding unit.
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13.发明申请公开(公告)号：US20220324180A1
公开(公告)日：2022-10-13
申请号：US17847928
申请日：2022-06-23
Applicant: Laser Systems Inc. , NICHIA CORPORATION
Inventor： Yuichi ASAKAWA , Yasuyuki TSUBOI , Hiroaki TAMEMOTO , Ryota TAOKA , Minoru YAMAMOTO
Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.
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公开(公告)号：US20170098733A1
公开(公告)日：2017-04-06
申请号：US15279811
申请日：2016-09-29
Applicant: NICHIA CORPORATION
Inventor： Hiroaki TAMEMOTO , Ryota TAOKA
CPC classification number: H01L33/0095 , B23K26/50 , B23K26/53 , B23K2101/40 , B23K2103/56 , H01L21/786 , H01L33/06 , H01L33/32 , H01L33/42
Abstract: A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.
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公开(公告)号：US20170005225A1
公开(公告)日：2017-01-05
申请号：US15196787
申请日：2016-06-29
Applicant: NICHIA CORPORATION
Inventor： Hiroki OKAMOTO , Hiroaki TAMEMOTO , Junya NARITA
IPC: H01L33/00 , H01L33/16 , H01L21/683 , H01L29/04 , H01L21/78 , H01L21/304
CPC classification number: H01L33/0095 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L29/04 , H01L2221/68327
Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
Abstract translation: 提供一种半导体元件的制造方法。 该方法包括在衬底上提供包括衬底和半导体结构的半导体晶片，在半导体晶片中形成切割起始部分，并将半导体晶片分成多个半导体元件，通过在半导体晶片上传送加压构件 其中按压构件被压靠在半导体晶片上以在切割起始部分分离半导体晶片。 按压构件包括被压在半导体晶片上的尖端部分，并且尖端部分具有球形表面。
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Patent Agency Ranking
公开(公告)号：US20230138592A1
公开(公告)日：2023-05-04
申请号：US17964034
申请日：2022-10-12
Applicant: NICHIA CORPORATION , HAMAMATSU PHOTONICS K.K.
Inventor： Naoto INOUE , Minoru YAMAMOTO , Taichi OKUBO , Hiroaki TAMEMOTO , Ryota SUGIO , Yusuke SEKIMOTO
IPC: H01L33/00
Abstract: A method for manufacturing a light-emitting element includes preparing a wafer; a laser beam irradiation process; and a separation process. The laser beam irradiation process includes a first irradiation process of forming a plurality of first modified portions, and a second irradiation process of forming a plurality of second modified portions. The second modified portions are formed in the second irradiation process so that a length in a thickness direction of the sapphire substrate of the second modified portions is greater than a length in the thickness direction of the first modified portions.
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公开(公告)号：US20220371130A1
公开(公告)日：2022-11-24
申请号：US17763379
申请日：2020-08-07
Applicant: NICHIA CORPORATION , HAMAMATSU PHOTONICS K.K.
Inventor： Hiroaki TAMEMOTO , Minoru YAMAMOTO , Yusuke SEKIMOTO , Ryota SUGIO , Tominori NAKAMURA
IPC: B23K26/53 , B23K26/046 , B23K26/0622
Abstract: This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.
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公开(公告)号：US20190035973A1
公开(公告)日：2019-01-31
申请号：US16149898
申请日：2018-10-02
Applicant: NICHIA CORPORATION
Inventor： Hiroki OKAMOTO , Hiroaki TAMEMOTO , Junya NARITA
IPC: H01L33/00 , H01L21/304 , H01L21/78 , H01L21/683 , H01L29/04
CPC classification number: H01L33/0095 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L29/04 , H01L2221/68327
Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.
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公开(公告)号：US20170200855A1
公开(公告)日：2017-07-13
申请号：US15471244
申请日：2017-03-28
Applicant: NICHIA CORPORATION
Inventor： Hiroaki TAMEMOTO , Chihiro JUASA
CPC classification number: H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/32
Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
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公开(公告)号：US20150155431A1
公开(公告)日：2015-06-04
申请号：US14556350
申请日：2014-12-01
Applicant: NICHIA CORPORATION
Inventor： Hiroaki TAMEMOTO
CPC classification number: H01L33/0075 , H01L33/0066 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/10 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32 , H01L2933/0033
Abstract: A method for manufacturing a light emitting element, including steps of preparing a wafer that has a substrate with a first main face and a second main face, in which the first main face is provided with a plurality of convex components and valleys that connect these convex components, and a semiconductor structure that is provided on the first main face; and dividing the wafer by laser scribing in which a laser beam is emitted from the second main face side along first dividing lines and second dividing lines to obtain a plurality of light emitting elements. The convex components are in the form of pyramids, prisms, or truncated pyramids, each of which having a polyhedral bottom face with a plurality of apexes, edge lines that extend from the apexes, and side faces that link the edge lines to each other. The convex components are disposed regularly so that a plurality of bounded regions, which are regions defined by virtual boundary between side faces of adjacent convex components in the valleys, are present around the convex components. And the first dividing lines and the second dividing lines are lines that extend in a direction that intersects straight lines that link the centers of the plurality of bounded regions around a single convex component.
Abstract translation: 一种制造发光元件的方法，包括制备具有第一主面和第二主面的基板的晶片的步骤，其中第一主面设置有多个凸部分和谷，所述凸部分和谷连接这些凸 部件和设置在第一主面上的半导体结构; 并且通过激光划线从第二主面侧沿着第一分割线和第二分割线分割激光束，从而获得多个发光元件。 凸起部分呈锥体，棱镜或截顶棱锥的形式，每个锥体具有多面体底面，具有多个顶点，从顶点延伸的边缘线以及将边缘线彼此连接的侧面。 规则地布置凸起部件，使得在凸起部件周围存在多个限定区域，这些区域是由凹部中的相邻凸起部件的侧面之间的虚拟边界限定的区域。 并且第一分割线和第二分割线是在与围绕单个凸部分连接多个有界区域的中心的直线相交的方向上延伸的线。
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