公开(公告)号：US20190229248A1

公开(公告)日：2019-07-25

申请号：US16373473

申请日：2019-04-02

Applicant: NICHIA CORPORATION

Inventor： Yoshikazu MATSUDA ,  Ryo SUZUKI

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/64 ,  H01L33/50 ,  H01L23/00

Abstract: A light-emitting device includes: a light-emitting element; a coating member that covers the light-emitting element; and two external connection electrodes exposed form a first surface of the coating member. Each of the external connection electrodes includes an electrode buried in the coating member; and a metal layer formed on the electrode. A surface of each of the metal layers is exposed from the first surface of the coating member. The first surface of the coating member includes a plurality of grooves between the external connection electrodes.

公开(公告)号：US20180033934A1

公开(公告)日：2018-02-01

申请号：US15661683

申请日：2017-07-27

Applicant: NICHIA CORPORATION

Inventor： Yoshikazu MATSUDA ,  Masashi KANAZAWA

IPC: H01L33/62 ,  H01L33/52 ,  H01L33/10

CPC classification number: H01L33/62 ,  H01L33/10 ,  H01L33/52

Abstract: A light-emitting device includes a light-emitting element that includes a layered structure including a semiconductor layer and a pair of electrodes on a first main surface of the layered structure, a light-transmissive member on a second main surface of the layered structure, the second main surface being opposite to the first main surface, a covering member covering lateral surfaces of the light-emitting element and the first main surface of the layered structure except for at least part of the pair of electrodes, a pair of first metal layers on the first main surface of the light-emitting element, the pair of first metal layers covering a surface of the covering member and being respectively connected with the pair of electrodes, and at least one second metal layer separated from the first metal layers.

公开(公告)号：US20150357539A1

公开(公告)日：2015-12-10

申请号：US14826283

申请日：2015-08-14

Applicant: NICHIA CORPORATION

Inventor： Yoshikazu MATSUDA ,  Kazuto OKAMOTO

IPC: H01L33/64 ,  H01L33/40 ,  H01L33/60 ,  H01L33/32

CPC classification number: H01L33/642 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/60 ,  H01L33/641

Abstract: Disclosed is a vertical nitride semiconductor device including a conductive substrate; a semiconductor layer bonded to the conductive substrate via a second electrode; a metal layer formed on the conductive substrate; a first electrode formed on the semiconductor layer; and a bonding layer formed between the conductive substrate and the second electrode. The conductive substrate has a flange part, which extends from a side surface of the conductive substrate, on a side of the other front surface thereof. The flange part is formed in a manner in which the conductive substrate and the semiconductor layer are bonded together and then a remaining part of the conductive substrate is divided, the remaining part being formed by cutting off the semiconductor layer and part of the conductive substrate in a thickness direction so as to expose a side surface of the semiconductor layer and the side surface of the conductive substrate.

Abstract translation: 公开了一种包括导电基板的垂直氮化物半导体器件; 通过第二电极接合到所述导电基板的半导体层; 形成在所述导电性基板上的金属层; 形成在所述半导体层上的第一电极; 以及形成在所述导电基板和所述第二电极之间的接合层。 导电性基板具有从导电性基材的侧面延伸的凸缘部，其另一面的一侧。 凸缘部以导电性基板和半导体层接合的方式形成，然后将导电性基板的剩余部分分割，其余部分通过将半导体层和部分导电性基板切断而形成 厚度方向以暴露半导体层的侧表面和导电基底的侧表面。