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公开(公告)号：US09761547B1
公开(公告)日：2017-09-12
申请号：US15295357
申请日：2016-10-17
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T. Kunkee , Charles M. Jackson , Dah-Weih Duan
IPC: H01L23/02 , H01L23/66 , H01L23/498 , H01L21/48 , H01L21/78 , H01P5/12 , H01P3/08 , H01P1/203 , H03H7/42
CPC classification number: H01L23/66 , H01L21/4853 , H01L21/486 , H01L21/78 , H01L23/49827 , H01L23/49833 , H01L2223/6611 , H01L2223/6627 , H01L2223/6677 , H01L2223/6683 , H01L2224/16225 , H01P1/2013 , H01P1/203 , H01P3/08 , H01P3/088 , H01P5/12 , H03H7/42
Abstract: A system and method for vertically integrating heterogeneous devices into a 3D tile architecture are disclosed. The system uses high precision microelectronics fabrication techniques and known-good-die to achieve high yield to integrate devices to process radio frequency signals at microwave frequencies of approximately 300 MHz to 300 GHz and above. The inventive architecture is based on a high density of small diameter vias to manage the integrity of electrical interconnects and simplify electrical routing.
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12.发明授权Compact wide band, flared horn antenna with launchers for generating circular polarized sum and difference patterns 有权紧凑的宽带，喇叭喇叭天线，具有发射器，用于产生圆极化和和差模式公开(公告)号：US09431715B1
公开(公告)日：2016-08-30
申请号：US14818122
申请日：2015-08-04
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Arun K. Bhattacharyya , Gregory P. Krishmar-Junker , Philip W. Hon , Shih-en Shih , David I. Stones , Dah-Weih Duan , Loc Chau
CPC classification number: H01Q13/02 , H01Q1/48 , H01Q13/025
Abstract: A flared feed horn including a plurality of signal lines deposited on a bottom surface of a substrate and forming part of a TE11 sum mode launcher, a ground plane deposited a top surface of the substrate, and an outer conductor electrically coupled to the ground plane and having an internal chamber, where the conductor includes a flared portion and a cylindrical portion. The outer conductor includes an opening opposite to the substrate defining an aperture of the feed horn. The feed horn also includes an embedded conductor positioned within the chamber and being coaxial with the outer conductor, where the embedded conductor is in electrical contact with the plurality of signal lines. The feed horn also includes a TE12 difference mode launcher electrically coupled to the outer conductor proximate the aperture.
Abstract translation: 一种扩口式馈电喇叭，包括沉积在基板的底表面上并形成TE11和模式发射器的一部分的多条信号线，沉积基板的顶表面的接地平面和电耦合到接地平面的外导体， 具有内部腔室，其中导体包括扩口部分和圆柱形部分。 外部导体包括与衬底相对的开口，该开口限定馈电喇叭的孔。 馈电喇叭还包括位于室内并与外部导体同轴的嵌入式导体，其中嵌入式导体与多条信号线电接触。 馈电喇叭还包括电耦合到靠近孔径的外导体的TE12差分模式发射器。
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13.发明公开公开(公告)号：US20240106123A1
公开(公告)日：2024-03-28
申请号：US17899750
申请日：2022-08-31
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T Kunkee
IPC: H01Q9/04 , C23C14/02 , C23C14/18 , C23C14/34 , C23C28/02 , C25D3/48 , C25D5/54 , C25D7/12 , H01Q1/48
CPC classification number: H01Q9/0407 , C23C14/022 , C23C14/185 , C23C14/34 , C23C28/023 , C25D3/48 , C25D5/54 , C25D7/123 , H01Q1/48
Abstract: An exemplary RF module includes a dielectric substrate with metal traces on one surface that connect high frequency components and provide reference ground. Other metal traces on the other surface of the substrate also provide high frequency transmission lines and reference ground. An enclosure made using semiconductor manufacturing technology is mounted to the substrate and has conductive interior recesses defined by extending walls that are connected to the reference ground. The recesses surround the respective components and provide electromagnetic shielding. The dimensional precision in the location and smoothness of the walls and recesses due to the semiconductor manufacturing technology provides repeatable unit-to-unit RF characteristics of the RF module. One way of mounting the enclosure to the substrate uses a plurality of metal bonding bumps extending outwardly from the walls to engage reference ground metal traces on the substrate. Applied pressure deforms the bonding bumps to form a metal-to-metal bond.
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公开(公告)号：US20240047388A1
公开(公告)日：2024-02-08
申请号：US18382598
申请日：2023-10-23
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
CPC classification number: H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
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公开(公告)号：US20220289559A1
公开(公告)日：2022-09-15
申请号：US17198700
申请日：2021-03-11
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
Abstract: A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.
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Patent Agency Ranking
公开(公告)号：US09843301B1
公开(公告)日：2017-12-12
申请号：US15210680
申请日：2016-07-14
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Paul L. Rodgers , Dah-Weih Duan
CPC classification number: H01P1/183 , H01L23/66 , H01L2223/6622 , H01L2223/6627 , H01L2223/6672 , H01P1/184 , H01P3/003 , H01P5/10 , H01P11/003
Abstract: A transformer balun fabricated in silicon and including a series of alternating metal layers and dielectric layers that define first and second outer conductors that are part of a coaxial structure. Each dielectric layer includes a plurality of conductive vias extending through the dielectric layer to provide electrical contact between opposing metal layers, where a top metal layer forms a top wall of each outer conductor and a bottom metal layer forms a bottom wall of each outer conductor and the other metal layers and the dielectric layers define sidewalls of the outer conductors. Inner conductors extends down both of the first and second outer conductors and a first output line is electrically coupled to a sidewall of the first outer conductor and a second output line is electrically coupled to a sidewall of the second outer conductor.
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17.发明授权公开(公告)号：US12126098B2
公开(公告)日：2024-10-22
申请号：US17899750
申请日：2022-08-31
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T Kunkee
IPC: H01Q9/04 , C23C14/02 , C23C14/18 , C23C14/34 , C23C28/02 , C25D3/48 , C25D5/54 , C25D7/12 , H01Q1/48
CPC classification number: H01Q9/0407 , C23C14/022 , C23C14/185 , C23C14/34 , C23C28/023 , C25D3/48 , C25D5/54 , C25D7/123 , H01Q1/48
Abstract: An exemplary RF module includes a dielectric substrate with metal traces on one surface that connect high frequency components and provide reference ground. Other metal traces on the other surface of the substrate also provide high frequency transmission lines and reference ground. An enclosure made using semiconductor manufacturing technology is mounted to the substrate and has conductive interior recesses defined by extending walls that are connected to the reference ground. The recesses surround the respective components and provide electromagnetic shielding. The dimensional precision in the location and smoothness of the walls and recesses due to the semiconductor manufacturing technology provides repeatable unit-to-unit RF characteristics of the RF module. One way of mounting the enclosure to the substrate uses a plurality of metal bonding bumps extending outwardly from the walls to engage reference ground metal traces on the substrate. Applied pressure deforms the bonding bumps to form a metal-to-metal bond.
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公开(公告)号：US12119313B2
公开(公告)日：2024-10-15
申请号：US18382598
申请日：2023-10-23
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
CPC classification number: H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
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19.发明授权公开(公告)号：US11470695B2
公开(公告)日：2022-10-11
申请号：US16860642
申请日：2020-04-28
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martn E Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US11373965B2
公开(公告)日：2022-06-28
申请号：US16916644
申请日：2020-07-17
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
Abstract: An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.
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