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公开(公告)号：US09116533B2
公开(公告)日：2015-08-25
申请号：US14215243
申请日：2014-03-17
Applicant: NXP B.V.
Inventor： Henricus Cornelis Johannes Buthker , Matthias Rose
IPC: H03K17/687 , G05F3/24 , H03K17/0812 , H03K17/567 , H01L23/50 , H03K17/30
CPC classification number: G05F3/247 , H01L23/50 , H01L2924/0002 , H03K17/08128 , H03K17/567 , H03K2017/307 , H03K2017/6875 , H01L2924/00
Abstract: The invention provides a cascode transistor circuit with a depletion mode transistor and a switching device. A gate bias circuit is connected between the gate of the depletion mode transistor and the low power line. The gate bias circuit is adapted to compensate the forward voltage of a diode function of the switching device. The depletion mode transistor and the gate bias circuit are formed as part of an integrated circuit.
Abstract translation: 本发明提供一种具有耗尽型晶体管和开关器件的共源共栅晶体管电路。 栅极偏置电路连接在耗尽型晶体管的栅极和低电源线之间。 栅极偏置电路适于补偿开关器件的二极管功能的正向电压。 耗尽型晶体管和栅极偏置电路形成为集成电路的一部分。
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12.发明申请公开(公告)号：US20150229205A1
公开(公告)日：2015-08-13
申请号：US14613235
申请日：2015-02-03
Applicant: NXP B.V.
Inventor： Henricus Cornelis Johannes Buthker , Matthias Rose , Philip Rutter , Jan Sonsky
CPC classification number: H02M1/4225 , H02M3/155 , H02M7/06 , H02M2001/0048 , Y02B70/126 , Y02B70/1491 , Y02P80/112
Abstract: Embodiments relate to a diode circuit which uses a Schottky diode. A parallel bypass branch has a switch and bypass diode in series. The operation of the switch is dependent on the voltage across the Schottky diode so that the bypass function is only effective when a desired voltage is reached. The diode circuit can be used as a replacement for a single diode, and provides bypass current protection preferably without requiring any external control input.
Abstract translation: 实施例涉及使用肖特基二极管的二极管电路。 并联旁路支路具有串联的开关和旁路二极管。 开关的操作取决于肖特基二极管两端的电压，因此旁路功能仅在达到所需电压时有效。 二极管电路可以用作单个二极管的替代，并且提供旁路电流保护，优选地不需要任何外部控制输入。
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公开(公告)号：US20240125897A1
公开(公告)日：2024-04-18
申请号：US18483770
申请日：2023-10-10
Applicant: NXP B.V.
Inventor： Cristian Pavao Moreira , Matthias Rose , Thierry Mesnard
Abstract: An integrated circuit (IC) includes circuitry in a plurality of power domains for transmitting and/or receiving radar chirp frames and first and second monitoring systems for monitoring supply voltages of a first and a second subset of the plurality of power domains, respectively. The first subset is monitored outside of a time window during which a chirp frame is transmitted and/or received utilizing circuitry of the IC, and the second subset is monitored during the time window. The first monitoring system includes an output for an error signal indicating a supply voltage in the first subset does not comply with a first voltage parameter. The second monitoring system includes a unique monitoring circuit for each power domain in the second subset, and each unique monitoring circuit includes an output for an error signal indicating a supply voltage in the second subset does not comply with a second voltage parameter.
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公开(公告)号：US09973083B1
公开(公告)日：2018-05-15
申请号：US15724867
申请日：2017-10-04
Applicant: NXP B.V.
Inventor： Matthias Rose , Hendrik Johannes Bergveld , Olivier Trescases , David King Wai Li
CPC classification number: H02M3/157 , H02M1/08 , H02M3/156 , H02M3/158 , H02M2001/0009
Abstract: A predictive controller for an inductive DC-DC converter comprising a switchable inductor is described. The predictive controller includes a DC-DC controller configured to generate a plurality of switching phases to control the inductor current in the switchable inductor, the duration of the switching phases being determined from at least one of a reference inductor current value and a reference output voltage value. The predictive controller includes a supervisory controller coupled to the DC-DC controller and configured to set a reference inductor current value dependent on an expected change in load current and/or voltage of a load configured to be connected to the load terminal. The expected change in load current and/or voltage is determined from a predetermined load profile.
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Patent Agency Ranking
公开(公告)号：US09705489B2
公开(公告)日：2017-07-11
申请号：US14835403
申请日：2015-08-25
Applicant: NXP B.V.
Inventor： Ralf van Otten , Franciscus Schoofs , Matthias Rose , Hendrik Bergveld
IPC: H03K17/687 , H03K17/10 , H03K17/16 , H03K17/042
CPC classification number: H03K17/687 , H03K17/04206 , H03K17/102 , H03K17/163 , H03K17/6871 , H03K2017/6875 , H03K2217/0081
Abstract: A cascode transistor circuit comprising a depletion-mode switch in series with a normally-off switch between a drain output terminal and a source output terminal. The circuit also includes a controller comprising a controller output terminal configured to provide a normally-on control signal for a normally-on control terminal of the depletion-mode switch, wherein the normally-on control signal is independent of the normally-off control signal; a negative voltage source configured to provide a negative voltage to the normally-on control terminal of the depletion-mode switch; and a feedback capacitance between the drain output terminal and a control node in a circuit path between the controller output terminal and the normally-on control terminal of the depletion-mode switch.
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公开(公告)号：US09608514B2
公开(公告)日：2017-03-28
申请号：US14613235
申请日：2015-02-03
Applicant: NXP B.V.
Inventor： Henricus Cornelis Johannes Buthker , Matthias Rose , Philip Rutter , Jan Sonsky
CPC classification number: H02M1/4225 , H02M3/155 , H02M7/06 , H02M2001/0048 , Y02B70/126 , Y02B70/1491 , Y02P80/112
Abstract: Embodiments relate to a diode circuit which uses a Schottky diode. A parallel bypass branch has a switch and bypass diode in series. The operation of the switch is dependent on the voltage across the Schottky diode so that the bypass function is only effective when a desired voltage is reached. The diode circuit can be used as a replacement for a single diode, and provides bypass current protection preferably without requiring any external control input.
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公开(公告)号：US09171837B2
公开(公告)日：2015-10-27
申请号：US14094890
申请日：2013-12-03
Applicant: NXP B.V.
Inventor： Philip Rutter , Jan Sonsky , Matthias Rose
IPC: H03K3/00 , H01L27/06 , H01L23/495 , H03K17/567 , H01L23/482 , H01L25/07
CPC classification number: H01L27/0629 , H01L23/4824 , H01L23/49531 , H01L23/49562 , H01L23/49575 , H01L25/072 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H03K17/567 , H01L2924/00
Abstract: A cascode circuit arrangement has a low voltage MOSFET and a depletion mode power device mounted on a substrate (for example a ceramic substrate), which can then be placed in a semiconductor package. This enables inductances to be reduced, and can enable a three terminal packages to be used if desired.
Abstract translation: 共源共栅电路装置具有安装在衬底（例如陶瓷衬底）上的低电压MOSFET和耗尽型功率器件，然后可将其放置在半导体封装中。 这使得能够减小电感，并且如果需要，可以使用三端子封装。
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公开(公告)号：US08847235B2
公开(公告)日：2014-09-30
申请号：US13937451
申请日：2013-07-09
Applicant: NXP B.V.
Inventor： Matthias Rose
IPC: H01L29/15 , H03K17/0812 , H03K17/10 , H03K17/567 , H01L27/06
CPC classification number: H01L27/06 , H03K17/08122 , H03K17/102 , H03K17/567 , H03K2017/6875
Abstract: A cascoded power semiconductor circuit is provided for power switches based on depletion-mode (normally on) devices. The control circuit makes use of a bootstrap arrangement that allows an active control of both power switches of a cascode circuit using a single gate driver.
Abstract translation: 基于耗尽模式（通常在设备）上的功率开关提供级联功率半导体电路。 控制电路使用自举装置，其允许使用单个栅极驱动器主动控制共源共栅电路的两个功率开关。
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公开(公告)号：US20140167822A1
公开(公告)日：2014-06-19
申请号：US14094890
申请日：2013-12-03
Applicant: NXP B.V.
Inventor： Philip Rutter , Jan Sonsky , Matthias Rose
IPC: H01L27/06
CPC classification number: H01L27/0629 , H01L23/4824 , H01L23/49531 , H01L23/49562 , H01L23/49575 , H01L25/072 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H03K17/567 , H01L2924/00
Abstract: A cascode circuit arrangement has a low voltage MOSFET and a depletion mode power device mounted on a substrate (for example a ceramic substrate), which can then be placed in a semiconductor package. This enables inductances to be reduced, and can enable a three terminal packages to be used if desired.
Abstract translation: 共源共栅电路装置具有安装在衬底（例如陶瓷衬底）上的低电压MOSFET和耗尽型功率器件，然后可将其放置在半导体封装中。 这使得能够减小电感，并且如果需要，可以使用三端子封装。
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