MULTIPLE-STAGE DOHERTY POWER AMPLIFIERS IMPLEMENTED WITH MULTIPLE SEMICONDUCTOR TECHNOLOGIES

    公开(公告)号:US20220416725A1

    公开(公告)日:2022-12-29

    申请号:US17360821

    申请日:2021-06-28

    Applicant: NXP USA, Inc.

    Abstract: A device includes an integrated circuit (IC) die. The IC die includes a silicon germanium (SiGe) substrate, a first RF signal input terminal, a first RF signal output terminal, a first amplification path between the first RF signal input terminal and the first RF signal output terminal, a second RF signal input terminal, a second RF signal output terminal, and a second amplification path between the second RF signal input terminal and the second RF signal output terminal. The device includes a first power transistor die including a first input terminal electrically connected to the first RF signal output terminal and a second power transistor die including a second input terminal electrically connected to the second RF signal output terminal. The first amplification path can include two heterojunction bipolar transistors (HBTs) connected in a cascode configuration and the second amplification path can include two HBTs connected in a cascode configuration.

    Temperature compensation circuit and temperature compensated amplifier circuit

    公开(公告)号:US11196391B2

    公开(公告)日:2021-12-07

    申请号:US16528536

    申请日:2019-07-31

    Applicant: NXP USA, Inc.

    Abstract: Embodiments of a temperature compensation circuit and a temperature compensated amplifier circuit are disclosed. In an embodiment, a temperature compensation circuit includes a bias reference circuit having serially connected transistor devices and a driver transistor device connected to the bias reference circuit. At least one of the serially connected transistor devices includes a resistor connected between two terminals of the at least one of the serially connected transistor devices. The driver transistor device is configured to generate a drive current based on a resistance value of the resistor.

    Circulator with integrated directional coupler, and communication systems including the same

    公开(公告)号:US11196138B1

    公开(公告)日:2021-12-07

    申请号:US17039027

    申请日:2020-09-30

    Applicant: NXP USA, Inc.

    Abstract: A circulator-coupler device includes a ferrite element, a resonator over and aligned along an axis with the ferrite element, and a plurality of resonator ports connected to the resonator. The plurality of resonator ports includes first and second resonator ports, and a first portion of a perimeter of the resonator extends between the first and second resonator ports. The circulator further includes a coupler element positioned across a gap from the first portion of the perimeter of the resonator, and a coupler port connected to the coupler element. The device also may include a permanent magnet aligned along the axis with the ferrite element, where the permanent magnet biases the ferrite element and causes a signal conducted through the resonator to have a directionality along a rotational direction that extends from the first resonator port to the second resonator port.

    SYSTEMS AND METHODS FOR FAST SWITCHING TIME DIVISION DUPLEX OPERATION OF POWER AMPLIFIERS

    公开(公告)号:US20200099344A1

    公开(公告)日:2020-03-26

    申请号:US16139671

    申请日:2018-09-24

    Applicant: NXP USA, Inc.

    Abstract: Power amplifiers, amplifier systems, and related methods are disclosed herein. In one example embodiment, the amplifier system includes a bias controller that enables fast switching between an on state bias voltage and an off state bias voltage for the power amplifier. The bias controller can transition a low impedance switch to an on state to electrically couple a first electrode of a charge holding capacitor to an input of the power amplifier. The charge holding capacitor can be pre charged with the on state bias voltage to quickly provide the on state bias voltage to the power amplifier. The bias controller can also transition the low impedance switch to an off state to couple the input of the power amplifier to the off state bias voltage.

    Radio frequency (RF) inductive signal coupler and method therefor

    公开(公告)号:US10438906B2

    公开(公告)日:2019-10-08

    申请号:US15371280

    申请日:2016-12-07

    Applicant: NXP USA, INC.

    Abstract: A reference circuit includes an integrated circuit (IC) formed on a semiconductor substrate including a first spiral inductor and a second spiral inductor. The first spiral inductor is formed from a first metal layer over the substrate. The second spiral inductor is formed from a second metal layer. The second spiral inductor is offset from the first spiral inductor and includes a first portion overlapping the first spiral inductor. A first capacitor includes a first terminal coupled to receive a radio frequency (RF) signal and a second terminal coupled to a first terminal of the first spiral inductor, and second capacitor includes a first terminal coupled to a second terminal of the first spiral inductor.

    Modifiable signal adjustment devices for power amplifiers and corresponding methods and apparatus

    公开(公告)号:US10027284B2

    公开(公告)日:2018-07-17

    申请号:US15393473

    申请日:2016-12-29

    Applicant: NXP USA, Inc.

    Abstract: An embodiment of an amplifier system includes a modifiable signal adjustment device with an RF signal adjustment circuit coupled between first and second nodes. The RF signal adjustment circuit includes an adjustable phase shifter and an adjustable attenuator coupled in series with each other. The device also includes a memory and a controller circuit. The controller circuit retrieves a phase shift value and an attenuation value from the memory. The controller circuit then controls the adjustable phase shifter to apply a phase shift corresponding to the phase shift value to an input RF signal received at the first node, and controls the adjustable attenuator to apply an attenuation corresponding to the attenuation value to the input RF signal. Applying the phase shift and the attenuation results in an output RF signal at the second node.

    Dynamic power amplifier with external forcing signal

    公开(公告)号:US12212290B2

    公开(公告)日:2025-01-28

    申请号:US17504046

    申请日:2021-10-18

    Applicant: NXP USA, Inc.

    Abstract: A device includes an amplifier having an input terminal and an output terminal. The input terminal is configured to receive a radio frequency (RF) input signal. The device includes an output network coupled to the output terminal of the power amplifier and a first passively tunable integrated circuit (PTIC) coupled to the output network. The first PTIC includes a direct-current (DC) bias voltage input terminal configured to receive a fixed bias voltage, a control signal input terminal configured to receive a time-varying control signal, wherein the fixed bias voltage in combination with the time-varying control signal sets an operating reference point of the first PTIC, and an input terminal electrically connected to the output terminal of the amplifier, wherein a change in an output voltage signal generated by the power amplifier causes the first PTIC to modify a first effective impedance of a load presented to the power amplifier via the output network.

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