公开(公告)号：US5519245A

公开(公告)日：1996-05-21

申请号：US56946

申请日：1993-05-05

申请人： Norihito Tokura ,  Naoto Okabe ,  Naohito Kato

发明人： Norihito Tokura ,  Naoto Okabe ,  Naohito Kato

IPC分类号： H01L29/08 ,  H01L29/739 ,  H01L29/80 ,  H01L23/58 ,  H01L29/76 ,  H01L29/861

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L2924/0002

摘要： An insulated gate bipolar transistor has a reverse conducting function built therein. A semiconductor layer of a first conduction type is formed on the side of a drain, a semiconductor layer of a second conduction type for causing conductivity modulation upon carrier injection is formed on the semiconductor layer of the first conduction type, a semiconductor layer of the second conduction type for taking out a reverse conducting current opposite in direction to a drain current is formed in the semiconductor layer of the second conduction type which is electrically connected to a drain electrode, and a semiconductor layer of the second conduction type is formed at or in the vicinity of a pn junction, through which carriers are given and received to cause conductivity modulation, with a high impurity concentration resulting in a path for the reverse conducting current into a pattern not impeding the passage of the carriers. Therefore, the built-in reverse conducting function has a low operating resistance, a large reverse current can be passed, there is no increase in on-resistance, and the turn-off time can be shortened.

摘要翻译： 绝缘栅双极晶体管内置有反向导通功能。 第一导电类型的半导体层形成在漏极侧，在第一导电类型的半导体层上形成用于在载流子注入时引起导电性调制的第二导电类型的半导体层，第二导电类型的半导体层 在与漏电极电连接的第二导电类型的半导体层中形成用于取出与漏电流方向相反的反向导通电流的导通型，并且在第二导电类型的半导体层中形成第二导电类型的半导体层 pn结的附近，赋予和接收载流子以引起电导率调制的pn结附近，杂质浓度高，导致反向导通电流进入不妨碍载流子通过的图案的路径。 因此，内置的反向导通功能具有低的工作电阻，可以通过大的反向电流，导通电阻不增加，并且可以缩短关断时间。

公开(公告)号：US5510634A

公开(公告)日：1996-04-23

申请号：US324508

申请日：1994-10-18

申请人： Naoto Okabe ,  Naohito Kato

发明人： Naoto Okabe ,  Naohito Kato

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/739 ,  H01L29/74 ,  H01L23/58

CPC分类号： H01L29/0626 ,  H01L29/7395 ,  H01L2924/0002

摘要： An IGBT chip includes a unit cell region and a guard ring region which surrounds the unit cell region. In the unit cell region, a plurality of IGBT unit cells are formed, each of which comprises a base layer, a source layer, a common gate electrode, a common source electrode, and a common drain electrode. In the guard ring region, at least one diffused layer making up a guard ring is formed. Further, an annular diffused layer is formed and is connected to the drain electrode. The annular diffused layer is disposed away from the outermost guard ring by a specified length. This length is such that the punch-through occurs before the avalanche breakdown voltage of the junction associated with the outermost guard ring. Therefore, the withstand voltage against the avalanche breakdown when surge voltage is applied to the drain electrode is improved.

摘要翻译： IGBT芯片包括单元区域和围绕单元区域的保护环区域。 在单元电池区域中，形成多个IGBT单位电池，每个IGBT单元电池包括基极层，源极层，公共栅电极，公共源电极和公共漏电极。 在保护环区域中，形成形成保护环的至少一个扩散层。 此外，形成环形扩散层并连接到漏电极。 环形扩散层远离最外侧保护环设置一定长度。 该长度使得穿孔发生在与最外侧保护环相关联的结的雪崩击穿电压之前。 因此，提高了当向漏电极施加浪涌电压时抵抗雪崩击穿的耐受电压。

公开(公告)号：US5475258A

公开(公告)日：1995-12-12

申请号：US405410

申请日：1995-03-15

申请人： Naohito Kato ,  Etsuji Toyoda ,  Naoto Okabe

发明人： Naohito Kato ,  Etsuji Toyoda ,  Naoto Okabe

IPC分类号： H01L21/76 ,  H01L27/02 ,  H01L27/04 ,  H01L29/78 ,  H01L29/866 ,  H01L29/161 ,  H01L29/20 ,  H01L29/22

CPC分类号： H01L29/7808 ,  H01L27/0255 ,  H01L27/0288 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/7322 ,  H01L29/7395

摘要： A semiconductor device has a protective Zener diode formed through an insulation film to a silicon substrate having a power MOSFET formed thereon. The breakdown strength of the insulation film is substantially improved and the withstand voltage of the Zener diode can be set to a high value. A gate plate 11 electrically connected to an outer circumferential part of a p-type diffusion region 104 is installed, and element parts 112a-112c and equipotential plates 113a-133c constituting a Zener diode group 115 are formed. The equipotential plates 113a-133c hold a prescribed potential by Zener diode pairs 114 of the element parts 112a-112c.

摘要翻译： 半导体器件具有通过绝缘膜形成的保护齐纳二极管，该保护齐纳二极管形成在其上形成功率MOSFET的硅衬底。 绝缘膜的击穿强度显着提高，并且齐纳二极管的耐受电压可以设定为高值。 安装了与p型扩散区域104的外周部电连接的栅板11，形成构成齐纳二极管组115的元件部分112a-112c和等电位板113a-133c。 等电位板113a-133c由元件部分112a-112c的齐纳二极管对114保持规定的电位。

公开(公告)号：US06281546B1

公开(公告)日：2001-08-28

申请号：US08993405

申请日：1997-12-18

申请人： Yoshihiko Ozeki ,  Naoto Okabe ,  Naohito Kato

发明人： Yoshihiko Ozeki ,  Naoto Okabe ,  Naohito Kato

IPC分类号： H01L2976

CPC分类号： H01L29/7395 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7801 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7816

摘要： A wide high concentration P+ type region is formed on the surface of an N− type epitaxial layer formed on a P type substrate in the vicinity of the edge portion of a cell region in which a transistor device is formed. As a result, holes generated at the outside of the cell region mostly flow through the P+ type region and reach to an emitter electrode. Therefore, the flow amount of the holes does not concentrate on a channel P well for forming a channel region of the transistor device at the cell edge portion, whereby a ruggedness against a latch-up phenomenon can be improved.

摘要翻译： 在形成有晶体管器件的单元区域的边缘部分附近的P型衬底上形成的N型外延层的表面上形成宽的高浓度P +型区域。 结果，在电池区域外部产生的空穴大部分流过P +型区域并到达发射电极。 因此，孔的流量不会集中在用于在单元边缘部分形成晶体管器件的沟道区的沟道P上，从而可以提高抵抗闩锁现象的坚固性。

公开(公告)号：US5973338A

公开(公告)日：1999-10-26

申请号：US947402

申请日：1997-10-08

申请人： Naoto Okabe ,  Norihito Tokura ,  Naohito Kato

发明人： Naoto Okabe ,  Norihito Tokura ,  Naohito Kato

IPC分类号： H01L29/68 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L29/1095 ,  H01L29/7395

摘要： An insulated gate type bipolar-transistor (IGBT) incorporates an excess voltage protecting function and drain voltage fixing function in a monolithic structure. Impurity concentration ND and the thickness of an n.sup.- type drain layer (3) is set so that a depletion region propagating from a p type base layer (7) reaches a p.sup.+ type drain layer at a voltage (V.sub.DSP) lower than a voltage (V.sub.DSS) at which avalanche breakdown is caused within the IGBT element when voltage is applied between the source and the drain.

摘要翻译： 绝缘栅型双极晶体管（IGBT）在整体结构中包含过电压保护功能和漏极电压固定功能。 杂质浓度ND和n型漏极层（3）的厚度被设定为使得从ap型基极层（7）传播的耗尽区域在低于电压（VDSS）的VDSP下达到p +型漏极层 ），当在源极和漏极之间施加电压时，在IGBT元件内引起雪崩击穿。

公开(公告)号：US5719412A

公开(公告)日：1998-02-17

申请号：US544200

申请日：1995-10-17

申请人： Naoto Okabe ,  Naohito Kato

发明人： Naoto Okabe ,  Naohito Kato

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/74 ,  H01L23/58

CPC分类号： H01L29/42376 ,  H01L29/7395 ,  H01L29/0619

摘要： The insulated gate bipolar transistor (IGBT) integrates the anti-excess voltage protection function and a drain voltage fixing function. When a voltage is applied across the drain electrode and the source electrode of the IGBT, a depletion zone propagates from a p-n junction between a p base layer and a n.sup.- drain layer toward inside of the n.sup.- drain layer. A critical electric field is also established, causing generation of a great number of electron-hole pairs due to impact ionization of carriers in or near the n.sup.- drain layer. Conduction exist between the drain electrode and the source electrode, at an applied voltage lower than a drain-source voltage at which the depletion region reaches a p.sup.+ drain layer through the n.sup.- drain layer, the applied voltage being equal to or lower than a critical voltage that causes generation of a great number of electron-hole pairs due to impact ionization of carriers in or near the n.sup.- drain layer below a p-n junction between a p-type guard ring and the n.sup.- drain layer.

摘要翻译： 绝缘栅双极晶体管（IGBT）集成了防过电压保护功能和漏极电压固定功能。 当跨越IGBT的漏电极和源电极施加电压时，耗尽区从p基极层和n-drain层之间的p-n结向n漏极层的内部传播。 还建立了一个临界电场，由于在n-漏极层中或附近的载流子的撞击电离，导致产生大量的电子 - 空穴对。 导通存在于漏电极和源电极之间，在施加的电压低于耗尽区通过n-漏极层到达p +漏极层的漏 - 源电压，施加电压等于或小于临界值 由于在p型保护环和n型漏极层之间的pn结下方的n漏极层内或附近的载流子的撞击电离，导致产生大量电子 - 空穴对的电压。

公开(公告)号：US5545908A

公开(公告)日：1996-08-13

申请号：US98396

申请日：1994-01-27

申请人： Norihiro Tokura ,  Naoto Okabe

发明人： Norihiro Tokura ,  Naoto Okabe

IPC分类号： H01L21/331 ,  H01L21/336 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/0878 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/1095

摘要： Arsenic is diffused previously on a most outside surface of a n.sup.- -type epitaxial layer (2), and after forming gate oxide films (3) and gate electrodes (4), p-type base regions (8) and n.sup.+ -type source layers (7) are formed in a self-aligned manner with the gate electrodes (4) by a DSA technique and double diffusion. Thereby, a lateral directional junction depth of the p-type base regions (8) is compensated at the most outside surface, and a channel length of channels (9) is shortened substantially. When designing a threshold voltage, an impurity density of the p-type base regions (8) can be set higher than that of the conventional device by an amount corresponding to an impurity density of the arsenic of the most outside surface, and p-type pinch layers (14) formed underneath the n.sup.+ -type source layers (7) of the p-type base regions are (8) are lowered correspondingly in resistance.

摘要翻译： PCT No.PCT / JP92 / 01596 Sec。 371日期1994年1月27日 102（e）日期1994年1月27日PCT提交1992年12月7日PCT公布。 公开号WO93 / 12545 日期1996年6月24日砷先前扩散到n型外延层（2）的最外表面，在形成栅氧化膜（3）和栅电极（4）之后，p型基极区（8） 并且通过DSA技术以双重扩散方式与栅电极（4）自对准地形成n +型源极层（7）。 由此，p型基极区域（8）的横向方向结深度在最外表面被补偿，并且通道（9）的通道长度基本上被缩短。 当设计阈值电压时，可以将p型基极区域（8）的杂质浓度设置为高于常规器件的杂质浓度相当于最外表面砷的杂质浓度的量，p型 形成在p型基极区域的n +型源极层（7）下面的夹层（14）（8）在电阻上相应降低。

公开(公告)号：US5448092A

公开(公告)日：1995-09-05

申请号：US70362

申请日：1993-06-01

申请人： Naoto Okabe ,  Norihito Tokura

发明人： Naoto Okabe ,  Norihito Tokura

IPC分类号： H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H01L29/10 ,  H01L29/739 ,  H01L29/76 ,  H01L29/00 ,  H01L29/74

CPC分类号： H01L29/7395 ,  H01L27/0248 ,  H01L29/1095

摘要： An insulated gate bipolar transistor (IGBT) element has a current detection function. An impurity-diffused area is formed at an area different from a unit cell area on the surface of the element. The current detection is performed by detecting a voltage drop due to carriers flowing in the lateral resistance of the impurity-diffused area. For example, in an n-channel IGBT, electrons are injected from a source electrode through an n-type source layer and the channel to an n-type drain layer at the cell when the unit cell is in an on-state. The pn junction at the drain side is forwardly biased to inject holes from the p-type drain layer to the n-type drain layer. At this time, the electrons also flow to the lower side of the p-type impurity-diffused area provided as the detection portion. Thus, the hole injection occurs at this portion. These surplus holes are discharged through the p-type layer of the detection portion to the source electrode. A potential which corresponds to a product of the lateral resistance of the p-type layer and a hole current appears at the source potential. By detecting this potential and converting the detected potential, an element current can be detected.

摘要翻译： PCT No.PCT / JP92 / 01239 Sec。 371日期：1993年6月1日 102（e）日期1993年6月1日PCT 1992年9月28日PCT公布。 出版物WO93 / 07645 日期：1993年04月15日。绝缘栅双极晶体管（IGBT）元件具有电流检测功能。 在与元件表面上的单元电池区域不同的区域上形成杂质扩散区域。 通过检测由于在杂质扩散区域的横向电阻中流动的载流子的电压降而进行电流检测。 例如，在n沟道IGBT中，当单位电池处于导通状态时，电子从源电极通过n型源极层和沟道注入到单元的n型漏极层。 漏极侧的pn结被向前偏置以从p型漏极层向n型漏极层注入空穴。 此时，电子也流到作为检测部设置的p型杂质扩散区域的下侧。 因此，在该部分发生空穴注入。 这些剩余的孔通过检测部的p型层被排出到源电极。 对应于p型层的横向电阻和空穴电流的乘积的电位出现在电位电位。 通过检测该电位并转换检测到的电位，可以检测元件电流。

公开(公告)号：US4985743A

公开(公告)日：1991-01-15

申请号：US221354

申请日：1988-07-19

申请人： Norihito Tokura ,  Hiroyasu Ito ,  Naoto Okabe

发明人： Norihito Tokura ,  Hiroyasu Ito ,  Naoto Okabe

IPC分类号： H01L29/78 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/45 ,  H01L29/68 ,  H01L29/739

CPC分类号： H01L29/0847 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/7395

摘要： This invention is basically related to an insulated gate bipolar transistor comprising a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer formed on the substrate and having a low concentration of impurities, a first conductivity type base layer formed on a surface of the semiconductor layer, a second conductivity type source layer formed on the surface of the base layer and having a channel region at at least one end thereof, a gate electrode, a source electrode and a drain electrode, and is characterized in that a voltage dropping portion is provided either inside the source layer or between the source layer and the source electrode. Accordingly an insulated gate bipolar semiconductor transistor having this configuration can prevent a latch up phenomenon caused by a voltage drop in a source layer.

摘要翻译： 本发明基本上涉及一种包括第一导电类型半导体衬底，形成在衬底上并具有低浓度杂质的第二导电类型半导体层的绝缘栅双极晶体管，形成在半导体表面上的第一导电型基极层 层，形成在基层的表面上并在其至少一端具有沟道区的第二导电型源极层，栅电极，源电极和漏电极，其特征在于，降压部分为 提供在源层内部或源层和源电极之间。 因此，具有这种结构的绝缘栅双极半导体晶体管可以防止由源极层中的电压降引起的闭锁现象。

公开(公告)号：US4653443A

公开(公告)日：1987-03-31

申请号：US678795

申请日：1984-12-05

申请人： Takeshi Fukazawa ,  Hironari Kuno ,  Naoto Okabe ,  Kunihiko Hara

发明人： Takeshi Fukazawa ,  Hironari Kuno ,  Naoto Okabe ,  Kunihiko Hara

IPC分类号： H01L35/00 ,  F02B3/06 ,  F02P19/02 ,  F23Q7/00

CPC分类号： F02P19/028 ,  F23Q7/001 ,  F02B3/06 ,  F02P19/025 ,  Y02T10/166

摘要： A thermoelectric generating composite functioning apparatus used as a glow plug in a diesel engine has sintered semiconductor elements respectively formed in the shape of a bar of N-type and P-type thermoelectric semiconductor materials. The N-type and P-type semiconductor elements are provided oppositely with a gap between them, and their end portions are put in mutual contact to form a P-N junction. A low thermal conductivity insulator is filled in the interval between the N-type and the P-type semiconductor elements. The N-type and P-type semiconductor elements provided in the P-N junction state are contained through the insulator in a housing. Lead terminals connected to the N-type and P-type semiconductor elements are formed in the housing. The apparatus may provide heat to the combustion chamber, or generate electricity from the heat in the combustion chamber.

摘要翻译： 在柴油发动机中用作电热塞的热电发生复合功能装置具有分别形成为N型和P型热电半导体材料棒的形状的烧结半导体元件。 N型和P型半导体元件与它们之间的间隙相对地设置，并且它们的端部相互接触以形成P-N结。 在N型和P型半导体元件之间的间隔中填充有低导热绝缘体。 设置在P-N结状态的N型和P型半导体元件通过壳体中的绝缘体容纳。 连接到N型和P型半导体元件的引线端子形成在壳体中。 该设备可以向燃烧室提供热量，或者从燃烧室中的热量发电。