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公开(公告)号：US11678077B2
公开(公告)日：2023-06-13
申请号：US17779160
申请日：2020-11-25
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY , NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY
发明人： Shoji Kawahito , Hiromasa Oku
IPC分类号： H04N25/50 , H04N25/77 , G02B7/28 , H04N13/236
摘要： An imaging device includes a varifocal lens and an imaging sensor which outputs a signal corresponding to light. The imaging sensor includes a photoelectric conversion unit which converts light into an electric charge, electric charge reading regions, transfer control electrodes, a gate control circuit which sequentially applies control signals to the transfer control electrodes to correspond to the position of the focal point of the varifocal lens, and a reading circuit which outputs a signal corresponding to the amount of the electric charge transferred to the electric charge reading regions. The gate control circuit repeats an operation of outputting each of the control signals when the position of the focal point is located in the focal ranges during a frame period.
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公开(公告)号：US11405577B2
公开(公告)日：2022-08-02
申请号：US16756174
申请日：2018-10-19
发明人： Shoji Kawahito
IPC分类号： G01S7/4861 , H04N5/369 , G01B11/14 , G01S17/89 , H04N5/341
摘要： A distance image sensor includes a light source that generates pulsed light, a light source control means for controlling the light source, a pixel circuit including a photoelectric conversion region, charge readout regions, a charge discharge region, and control electrodes, a charge transfer control means for sequentially applying a control pulse to the control electrodes, and a distance calculation means for reading voltages of the charge readout regions as detection signals and repeatedly calculating a distance on the basis of the detection signals, and the charge transfer control means sets timings of the control pulses so that delay times of the control pulses with respect to a generation timing of the pulsed light is shifted to a time differing between the four types of subframe periods in one frame period.
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公开(公告)号：US11222911B2
公开(公告)日：2022-01-11
申请号：US16770615
申请日：2018-12-07
发明人： Shoji Kawahito
IPC分类号： H01L27/146 , H01L31/111
摘要： A photoelectric conversion element encompasses a depletion-layer extension-promotion region having a p-type upper layer, a p-type photoelectric conversion layer in contact with the depletion-layer extension-promotion region, and an n-type surface-buried region buried in an upper portion of the photoelectric conversion layer, configured to implement a photodiode together with the photoelectric conversion layer. A first p-well is surrounded by a first n-tab, the first n-tab is surrounded by a second p-well, the second p-well is surrounded by a second n-tab, and the second n-tab is surrounded by a third p-well. An injection-blocking element blocks injection of carriers of opposite conductivity type to signal charges from the second p-well into the photoelectric conversion layer, and the inside of the photoelectric conversion layer is depleted by a voltage applied to the depletion-layer extension-promotion region.
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公开(公告)号：US10715757B2
公开(公告)日：2020-07-14
申请号：US16349016
申请日：2017-11-09
发明人： Shoji Kawahito
摘要： An A/D converter 1 includes a front stage A/D conversion unit (3) including a first A/D conversion unit (6) that receives an analog signal from a CMOS image sensor (100) and generates a first digital value (D1) and a first residual analog signal (VOPF) through a folding integration A/D conversion operation, and a second A/D conversion unit (7) that receives a first residual analog signal (VOPF) from the first A/D conversion unit (6) and generates a second digital value (D2) and a second residual analog signal (VOPC) through a cyclic A/D conversion operation, and a rear stage A/D conversion unit (4) that receives the second residual analog signal (VOPC) from the front stage A/D conversion unit (3) and generates a third digital value (D3) through an acyclic A/D conversion operation.
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公开(公告)号：US09681072B2
公开(公告)日：2017-06-13
申请号：US14420172
申请日：2013-08-07
发明人： Keiichiro Kagawa , Shoji Kawahito
IPC分类号： H04N5/357 , H04N5/374 , H04N3/14 , H04N5/243 , H04N5/341 , H04N5/359 , H04N5/361 , H04N5/3745
CPC分类号： H04N5/357 , H04N3/1593 , H04N5/243 , H04N5/341 , H04N5/3415 , H04N5/359 , H04N5/361 , H04N5/374 , H04N5/3745 , H04N2209/048
摘要： A solid-state image pickup device 1A includes an image pickup section 2 having a pixel array P in which a pixel C is two-dimensionally arranged, a lens section 3 having a plurality of lenses 3a arranged on the pixel array P, and an image generating section 4A for generating an image by using an electrical signal SE. The image pickup section 2 has a plurality of the pixel arrays P including one image pickup region T. The image generating section 4A generates the image by averaging the electrical signals SE for each pixel C corresponding to one another among the image pickup regions T, in order to reduce noise present in the electrical signal SE.
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公开(公告)号：US09270258B2
公开(公告)日：2016-02-23
申请号：US14358970
申请日：2012-11-14
发明人： Shoji Kawahito , Kaita Imai
摘要： A ramp signal generation circuit 21 comprises a plurality of unit circuits 221 to 22N, each including a capacitor 26 having one end 26a held at a fixed potential and a current source 27 connected to the other end 26b of the capacitor 26, while the other ends 26b of the capacitors 26 in the plurality of unit circuits 221 to 22N are connected to each other with a wiring member W.
摘要翻译： 斜坡信号产生电路21包括多个单元电路221至22N，每个单元电路221至22N包括一个电容器26，其一端26a保持在固定电位，电流源27连接到电容器26的另一端26b，而另一端 多个单元电路221〜22N的电容器26b的26b通过配线部件W相互连接。
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公开(公告)号：US20150187923A1
公开(公告)日：2015-07-02
申请号：US14419341
申请日：2013-08-01
发明人： Shoji Kawahito
IPC分类号： H01L29/768 , H01L27/148
CPC分类号： H01L29/76833 , H01L27/146 , H01L27/1461 , H01L27/14612 , H01L27/148 , H01L27/14806 , H01L27/14812 , H01L27/14818 , H01L27/14825 , H01L27/14831 , H01L27/14843 , H01L27/1485 , H04N5/369 , H04N5/372 , H04N5/374
摘要： A semiconductor element encompasses a charge-transfer path defined in a semiconductor region (34.35), configured to transfer signal charges, (b) a pair of first field-control electrodes (42a, 42b) laminated via an insulating film on the semiconductor region so as to sandwich the charge-transfer path in between, and a pair of second field-control electrodes (43a, 43b) arranged separately from and adjacently to the first field-control electrodes (42a, 42b). By applying field-control voltages differing from each other, to the first and second field-control electrodes (43a, 43b), a depleted potential in the charge-transfer path is changed, and a movement of the signal charges transferring in the semiconductor region is controlled. Because electric field can be made constant over a long distance along the charge-transfer direction, a semiconductor element and a solid-state imaging device, in which problems caused by interface defects and the like are avoided, can be provided.
摘要翻译： 半导体元件包括限定在半导体区域（34.35）中的电荷传输路径，被配置为传送信号电荷，（b）经由半导体区域上的绝缘膜层压的一对第一场控制电极（42a，42b），从而 将电荷转移路径夹在中间，以及与第一场控制电极（42a，42b）分开并相邻配置的一对第二场控制电极（43a，43b）。 通过施加彼此不同的场控制电压到第一和第二场控制电极（43a，43b），电荷传输路径中的耗尽电位改变，并且在半导体区域中传输的信号电荷的移动 被控制。 由于可以沿着电荷转移方向使电场长距离恒定，所以可以提供避免由界面缺陷等引起的问题的半导体元件和固体摄像器件。
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公开(公告)号：US20140319325A1
公开(公告)日：2014-10-30
申请号：US14358970
申请日：2012-11-14
发明人： Shoji Kawahito , Kaita Imai
摘要： A ramp signal generation circuit 21 comprises a plurality of unit circuits 221 to 22N, each including a capacitor 26 having one end 26a held at a fixed potential and a current source 27 connected to the other end 26b of the capacitor 26, while the other ends 26b of the capacitors 26 in the plurality of unit circuits 221 to 22N are connected to each other with a wiring member W.
摘要翻译： 斜坡信号产生电路21包括多个单元电路221至22N，每个单元电路221至22N包括一个电容器26，其一端26a保持在固定电位，电流源27连接到电容器26的另一端26b，而另一端 多个单元电路221〜22N的电容器26b的26b通过配线部件W相互连接。
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