公开(公告)号：US20060249699A1

公开(公告)日：2006-11-09

申请号：US11406216

申请日：2006-04-17

Applicant: Norbert Bowering ,  Oleh Khodykin ,  Alexander Bykanov ,  Igor Fomenkov

Inventor： Norbert Bowering ,  Oleh Khodykin ,  Alexander Bykanov ,  Igor Fomenkov

IPC: G01J3/10

CPC classification number: H05G2/006 ,  B82Y10/00 ,  G21K2201/061 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and/or Indium.

Abstract translation: 公开了一种EUV光源，其可以包括具有表面的至少一个光学元件，例如多层收集镜; 产生激光束的激光源; 以及由激光束照射以形成等离子体并发射EUV光的源材料。 在一个方面，源材料可以基本上由锡化合物组成，并且可以通过沉积在光学元件上的等离子体形成而产生锡屑，此外，锡化合物可以包括有效地从光学蚀刻沉积的锡的元素 元素表面。 锡化合物可以包括SnBr 4，SnBr 2和SnH 4。 另一方面，EUV光源可以包括由激光束照射以形成等离子体并发射EUV光的熔融源材料，源材料包含锡和至少一种其它金属，例如锡与镓和/或铟。

公开(公告)号：US06972421B2

公开(公告)日：2005-12-06

申请号：US10409254

申请日：2003-04-08

Applicant: Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert Bowering ,  Oleh Khodykin ,  Curtis L. Rettig ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

Inventor： Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert Bowering ,  Oleh Khodykin ,  Curtis L. Rettig ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

IPC: G21K5/00 ,  G01J1/00 ,  G03F7/20 ,  G21K5/02 ,  H01L21/027 ,  H01S3/00 ,  H05G2/00 ,  H05H1/06 ,  H05H1/24 ,  H01J35/20

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70175 ,  G03F7/70916 ,  H01S3/005 ,  H05G2/005 ,  H05G2/008 ,  H05H1/06

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Abstract translation: 本发明提供了一种可靠，高重复率的生产线兼容高能光子源。 在真空室中产生含有活性物质的非常热的等离子体。 活性物质是具有期望的极紫外（EUV）范围内的发射线的原子元素。 包括充电电容器和包括脉冲变压器的磁压缩电路的脉冲电源提供电脉冲，其具有足够的能量和电势，足以以超过5瓦的速率在中间焦点处产生EUV光。 在由申请人带内设计的优选实施例中，中间焦点处的EUV光能量可以45瓦可扩展到105.8瓦特。

公开(公告)号：US20050199829A1

公开(公告)日：2005-09-15

申请号：US10900839

申请日：2004-07-27

Applicant: William Partlo ,  Norbert Bowering ,  Alexander Ershov ,  Igor Fomenkov ,  David Myers ,  Ian Oliver ,  John Viatella ,  Robert Jacques

Inventor： William Partlo ,  Norbert Bowering ,  Alexander Ershov ,  Igor Fomenkov ,  David Myers ,  Ian Oliver ,  John Viatella ,  Robert Jacques

IPC: G03F7/20 ,  G21K1/06 ,  H01J35/20 ,  H05G2/00 ,  H01J65/04

CPC classification number: G03F7/70033 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/065 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

Abstract: An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.

公开(公告)号：US08035092B2

公开(公告)日：2011-10-11

申请号：US12655987

申请日：2010-01-11

Applicant: Alexander N. Bykanov ,  Norbert Bowering ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  Oleh Khodykin

Inventor： Alexander N. Bykanov ,  Norbert Bowering ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  Oleh Khodykin

IPC: H04H1/04

CPC classification number: G03F7/70916 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70908 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/008

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract translation: 公开了一种可以包括在等离子体位置处产生等离子体的系统，等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件，例如多个远离现场的多层反射镜，以及设置在等离子体和光学元件之间的流动气体，该气体建立足以在该距离上操作的气体压力， d，在离子到达光学器件之前，将离子能量降低到预先选定的值以下。 在一个实施方案中，气体可以包含氢气，并且在一个具体实施方案中，气体可以包含大于50体积％的氢气。

公开(公告)号：US20100176313A1

公开(公告)日：2010-07-15

申请号：US12653585

申请日：2009-12-14

Applicant: Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert Bowering ,  Oleh Khodykin ,  Curtis L. Rettiq ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

Inventor： Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert Bowering ,  Oleh Khodykin ,  Curtis L. Rettiq ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

IPC: G21K5/02

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70175 ,  G03F7/70916 ,  H01S3/005 ,  H05G2/005 ,  H05G2/008 ,  H05H1/06

Abstract: An apparatus for generating EUV radiation is disclosed which may include a target material, a system generating a laser beam for interaction with the target material and a pair of electrodes. A pulse power electrical circuit may be provided for generating a discharge between said electrodes to produce EUV radiation from said target material.

Abstract translation: 公开了一种用于产生EUV辐射的装置，其可以包括目标材料，产生用于与靶材料相互作用的激光束的系统和一对电极。 可以提供脉冲功率电路用于在所述电极之间产生放电以从所述目标材料产生EUV辐射。

公开(公告)号：US07732793B2

公开(公告)日：2010-06-08

申请号：US11705954

申请日：2007-02-13

Applicant: Alexander I. Ershov ,  William F. Marx ,  Norbert Bowering ,  Bjorn A. M. Hansson ,  Oleh Khodykin ,  Igor V. Fomenkov

Inventor： Alexander I. Ershov ,  William F. Marx ,  Norbert Bowering ,  Bjorn A. M. Hansson ,  Oleh Khodykin ,  Igor V. Fomenkov

IPC: C25F1/00

CPC classification number: B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/7085 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/06 ,  H05G2/001

Abstract: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

Abstract translation: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面，提供了一种EUV计量监测器，其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面，公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面，EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面，公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

公开(公告)号：US07525111B2

公开(公告)日：2009-04-28

申请号：US11471434

申请日：2006-06-20

Applicant: Norbert Bowering

Inventor： Norbert Bowering

IPC: H01J35/20

CPC classification number: B82Y10/00 ,  G03F7/70033 ,  H05G2/003 ,  H05G2/008

Abstract: An EUV light source and method include a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of a target ignition site to confine the plasma to the vicinity of the target ignition site, which is controlled using outputs from a target tacking system.

Abstract translation: EUV光源和方法包括磁性等离子体约束机构，其在目标点火部位附近产生磁场，以将等离子体限制在目标点火点附近，其使用来自目标固定系统的输出进行控制。

公开(公告)号：US07309871B2

公开(公告)日：2007-12-18

申请号：US11603732

申请日：2006-11-21

Applicant: Norbert Bowering

Inventor： Norbert Bowering

IPC: H01J35/20

CPC classification number: H05G2/001 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062

Abstract: An apparatus/method may comprise, a multi-layer reflecting coating forming an EUV reflective surface which may comprise an inter-diffusion barrier layer which may comprise a carbide selected from the group ZrC and NbC or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4. The apparatus and method may comprise an EUV light source collector which may comprise a collecting mirror which may comprise a normal angle of incidence multi-layer reflecting coating; an inter-diffusion barrier layer comprising a material selected from the group comprising a carbide selected from the group ZrC and NbC, or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4.

Abstract translation: 一种装置/方法可以包括形成EUV反射表面的多层反射涂层，其可以包括互扩散阻挡层，其可以包括选自ZrC和NbC的碳化物或选自ZrB 2和NbB 2 N或选自ZrSi 2和NbSi 2的二硅化物或选自BN， ZrN，NbN，BN，ScN和Si 3 N 4。 该装置和方法可以包括EUV光源收集器，其可以包括可以包括正常入射角多层反射涂层的收集镜; 包含从包括选自ZrC和NbC的碳化物组成的组中选择的材料或选自ZrB 2 Nb和NbB 2 Nb的硼化物的互扩散阻挡层， 或选自ZrSi 2 N 2和NbSi 2 N的二硅化物，选自BN，ZrN，NbN，BN，ScN和Si 3 N的氮化物 N 4 。

公开(公告)号：US20070102653A1

公开(公告)日：2007-05-10

申请号：US11323397

申请日：2005-12-29

Applicant: Norbert Bowering ,  Bjorn Hansson ,  Rodney Simmons

Inventor： Norbert Bowering ,  Bjorn Hansson ,  Rodney Simmons

IPC: G21K5/04

CPC classification number: H05G2/003 ,  H05G2/006

Abstract: An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.

Abstract translation: 公开了一种EUV光源及其操作方法，其可以包括：EUV等离子体生成室，其包括室壁，该室壁包括用于使产生的EUV光聚焦到聚焦点的通过的出口; 第一EUV出口套筒，其包括终端，所述终端包括面向所述出口的开口; 第一出口套筒室，其容纳所述第一出口套筒并具有EUV光出口; 气体供给机构，其在高于等离子体生成室内的压力的压力下向第一出口套筒室供给气体。 第一出口套筒可以朝向终端开口渐缩，并且可以例如是在终端处包括窄端的圆锥形形状。

公开(公告)号：US20060131515A1

公开(公告)日：2006-06-22

申请号：US10798740

申请日：2004-03-10

Applicant: William Partlo ,  John Algots ,  Gerry Blumenstock ,  Norbert Bowering ,  Alexander Ershov ,  Igor Fomenkov ,  Xiaojiang Pan

Inventor： William Partlo ,  John Algots ,  Gerry Blumenstock ,  Norbert Bowering ,  Alexander Ershov ,  Igor Fomenkov ,  Xiaojiang Pan

IPC: G01J1/00

CPC classification number: H05G2/001 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062

Abstract: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

Abstract translation: 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎屑的方法和装置，其可以包括反射表面，其包括第一材料，并且所述碎屑包括第二材料和/或第二材料的化合物，所述系统 并且方法可以包括受控的溅射离子源，其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构，所选择的离子化状态具有围绕选择的能量峰的分布，其具有溅射第二材料的可能性很高，并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。