Device manufacturing method
    11.
    发明授权
    Device manufacturing method 失效
    器件制造方法

    公开(公告)号:US06645707B2

    公开(公告)日:2003-11-11

    申请号:US09534334

    申请日:2000-03-24

    IPC分类号: G03C556

    CPC分类号: G03F7/70466 G03F7/2022

    摘要: A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.

    摘要翻译: 一种器件制造方法包括:第一曝光步骤,用于通过使用多个第一掩模来执行衬底的第一层的多次曝光;显影步骤,用于显影衬底的第一层;以及第二曝光步骤,在显影步骤之后执行 ,用于通过使用多个第二掩模来执行所述基板的第二层的多次曝光。 第一掩模中的至少一个的一部分具有与形成在至少一个第二掩模的部分中的图案相同的图案。

    X-ray exposure apparatus
    12.
    发明授权
    X-ray exposure apparatus 失效
    X射线曝光装置

    公开(公告)号:US06453001B2

    公开(公告)日:2002-09-17

    申请号:US09853712

    申请日:2001-05-14

    IPC分类号: H01L2130

    CPC分类号: G03F7/70058 G21K1/04

    摘要: An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.

    摘要翻译: X射线曝光装置具有通过产生等离子体产生X射线的等离子体X射线源和用于会聚从X射线源发散的X射线的准直仪,并且减小全局发散角以照射掩模 X光片。 通过沿准直器的轴线垂直或平行的方向移动准直仪的位置或角度来改变从掩模上的一个点看到的局部会聚角度。 使用具有如此控制的会聚角的X射线将掩模上的图案转印到晶片。 结果,可控参数增加并且可以获得更合适的抗蚀剂图案。 此外,改善了曝光更精细图案的工艺公差。

    X-ray exposure method and apparatus and device manufacturing method
    13.
    发明授权
    X-ray exposure method and apparatus and device manufacturing method 失效
    X射线曝光方法及装置和装置制造方法

    公开(公告)号:US5606586A

    公开(公告)日:1997-02-25

    申请号:US678784

    申请日:1996-07-11

    IPC分类号: B29C35/08 G03F7/20 G21K5/00

    摘要: An exposure method using X-rays from a synchrotron radiation source includes determining a relationship between an X-ray intensity distribution and an exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.

    摘要翻译: 使用来自同步加速器辐射源的X射线的曝光方法包括确定曝光区域中的X射线强度分布与曝光量分布之间的关系; 以及通过使用关系控制曝光区域中的各个位置的剂量量来进行曝光操作,其中通过改变用于控制曝光操作的活动快门的驱动轮廓来控制剂量,并且其中的关系为 作为曝光区域中的位置信息的函数的X射线强度与曝光量之间的比例系数。

    Optical exposure method and device formed by the method
    14.
    发明授权
    Optical exposure method and device formed by the method 失效
    通过该方法形成的光学曝光方法和装置

    公开(公告)号:US5604779A

    公开(公告)日:1997-02-18

    申请号:US455154

    申请日:1995-05-31

    摘要: A transfer magnification correcting method suited for use in scanning exposure by use of synchrotron radiation or the like. In proximity exposure according to the scanning exposure method by use of synchrotron radiation, the magnification in the scanning direction is corrected by relatively moving a wafer and a mask simultaneously with the scanning. Also, the overall correction of the magnification is performed by changing a proximity gap or adjusting the temperature of the mask or the wafer. As a result, it is possible to correct the transfer magnification separately in the vertical and horizontal directions.

    摘要翻译: 适用于通过使用同步加速器辐射等扫描曝光的转印倍率校正方法。 在通过使用同步加速器辐射的根据扫描曝光方法的接近曝光中,通过与扫描同时相对移动晶片和掩模来校正扫描方向上的放大率。 此外,通过改变接近间隙或调节掩模或晶片的温度来执行放大率的总体校正。 结果,可以在垂直和水平方向上分别校正传送倍率。

    Angle detecting device and optical apparatus, such as exposure
apparatus, employing the same
    15.
    发明授权
    Angle detecting device and optical apparatus, such as exposure apparatus, employing the same 失效
    角度检测装置和光学装置,例如曝光装置

    公开(公告)号:US5400386A

    公开(公告)日:1995-03-21

    申请号:US277352

    申请日:1994-07-19

    CPC分类号: G03F7/70058 G03F7/70808

    摘要: Disclosed is a device for determining an angle of incident light or a shift in incident light based on the output value of a detector. In a predetermined angle detection range, a beam of light incident on a detector for detecting the intensity of light incident thereon is restricted such that the amount of light continuously increases or decreases in accordance with the angle between an optical axis of the incident light and a referential axis of an exposure apparatus. Outside of the predetermined angle detection range, the amount of light is restricted depending on the direction in which the optical axis of the light is shifted from the angle detection range. The amount of light incident on the detector continuously increases or decreases in accordance with the angle between the optical axis of the incident light and the referential axis when the light is made incident within the angle detection range by means of the light restriction means. It is therefore possible to determine the angle of the incident light from the output value of the detector. When the light is made incident outside of the angle detection range, and since the amount of incident light is restricted in accordance with the direction in which the light is shifted, it is possible to determine the direction in which the light is shifted.

    摘要翻译: 公开了一种用于基于检测器的输出值确定入射光的角度或入射光的偏移的装置。 在预定的角度检测范围内,限制入射到检测器上的入射光的光束,使得光的量根据入射光的光轴和 曝光装置的参考轴。 在预定角度检测范围之外,根据光的光轴从角度检测范围偏移的方向来限制光的量。 当光通过光限制装置入射到角度检测范围内时,入射到检测器上的光量随着入射光的光轴与参考轴之间的夹角而连续地增加或减小。 因此,可以根据检测器的输出值确定入射光的角度。 当光入射到角度检测范围之外时,并且由于入射光的量根据光的移动方向而受到限制,因此可以确定光的移动方向。

    Exposure method and apparatus
    16.
    发明授权
    Exposure method and apparatus 失效
    曝光方法和装置

    公开(公告)号:US5131022A

    公开(公告)日:1992-07-14

    申请号:US769493

    申请日:1991-10-01

    IPC分类号: G03F7/20

    摘要: An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.

    Exposure method
    17.
    发明授权
    Exposure method 失效
    曝光方法

    公开(公告)号:US4604345A

    公开(公告)日:1986-08-05

    申请号:US729051

    申请日:1985-04-30

    申请人: Mitsuaki Amemiya

    发明人: Mitsuaki Amemiya

    IPC分类号: G03F7/20 H01L21/027 G03C5/00

    摘要: An exposure method for exposing a sensitive layer on a semiconductor wafer to an integrated-circuit pattern of a mask. The exposure is effected by a combination of a primary exposure step for exposing the sensitive layer to the pattern with a beam of high resolution and a secondary exposure step for exposing the sensitive layer with a beam of lower resolution and by an amount which does not have a substantial effect on the sensitization of the sensitive layer. By the combined exposures, the exposure time can be reduced as compared with that required in the exposure only through a high-resolution exposure.

    摘要翻译: 一种用于将半导体晶片上的敏感层暴露于掩模的集成电路图案的曝光方法。 曝光是通过一次曝光步骤的组合实现的,该曝光步骤用高分辨率的光束将感光层曝光到图案;以及二次曝光步骤,用较低分辨率的光束曝光敏感层和不具有 对敏感层敏化的实质性影响。 通过组合曝光,与仅通过高分辨率曝光曝光所需的曝光时间相比,可以减少曝光时间。

    Alignment apparatus, exposure apparatus and device fabrication method
    18.
    发明授权
    Alignment apparatus, exposure apparatus and device fabrication method 失效
    对准装置,曝光装置和装置制造方法

    公开(公告)号:US07271875B2

    公开(公告)日:2007-09-18

    申请号:US11214252

    申请日:2005-08-29

    IPC分类号: G03B27/52 G03B27/42

    摘要: An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.

    摘要翻译: 一种对准装置,用于将通过使用波长为1nm至50nm的光来支撑具有曝光图案的掩模的掩模台和支撑物体的对准装置,所述对准装置包括用于形成 与掩模或掩模台上形成的第二参考图案相似的第一参考图案,以及用于检测来自基板的光的检测部分,其中所述基板和检测部分形成填充有气体的中空壳体。

    Measuring method, exposure apparatus, and device manufacturing method
    19.
    发明申请
    Measuring method, exposure apparatus, and device manufacturing method 失效
    测量方法,曝光装置和装置制造方法

    公开(公告)号:US20060186352A1

    公开(公告)日:2006-08-24

    申请号:US11359303

    申请日:2006-02-21

    申请人: Mitsuaki Amemiya

    发明人: Mitsuaki Amemiya

    IPC分类号: G21G5/00

    摘要: A measuring method that utilizes a bandpass filter and a measurement apparatus to measure an intensity of light having a predetermined wavelength among lights emitted from a light source, the bandpass filter transmitting the light having the predetermined wavelength, the measurement apparatus measuring an absolute intensity of an incident light includes the steps of measuring an output of the measurement apparatus continuously, stopping or starting an emission of the light source in the measuring step, calculating a first extreme value t→t0−0 and a second extreme value t→t0+0 in the output of the measurement apparatus at time t0 where t is time in the measuring step, and t0 is time when the emission of the light source stops; and calculating a difference between the first extreme value t→t0−0 and the second extreme value t→t0+0.

    摘要翻译: 一种利用带通滤波器和测量装置测量从光源发出的光中的具有预定波长的光的强度的测量方法,所述带通滤光器透射具有预定波长的光,所述测量装置测量绝对强度 入射光包括在测量步骤中连续地测量测量设备的输出,停止或开始光源的发射的步骤,计算第一极限值t→t 0 -0和 在测量步骤的时间t 0 0时,测量装置的输出中的第二极值t-> t <0> 0 <0>,其中t是测量步骤中的时间,t 0 是光源的发射停止的时刻; 以及计算第一极限值t-> t <0> -0和第二极值t→t 0 + 0之间的差值。