摘要:
A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.
摘要:
An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.
摘要:
An exposure method using X-rays from a synchrotron radiation source includes determining a relationship between an X-ray intensity distribution and an exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.
摘要:
A transfer magnification correcting method suited for use in scanning exposure by use of synchrotron radiation or the like. In proximity exposure according to the scanning exposure method by use of synchrotron radiation, the magnification in the scanning direction is corrected by relatively moving a wafer and a mask simultaneously with the scanning. Also, the overall correction of the magnification is performed by changing a proximity gap or adjusting the temperature of the mask or the wafer. As a result, it is possible to correct the transfer magnification separately in the vertical and horizontal directions.
摘要:
Disclosed is a device for determining an angle of incident light or a shift in incident light based on the output value of a detector. In a predetermined angle detection range, a beam of light incident on a detector for detecting the intensity of light incident thereon is restricted such that the amount of light continuously increases or decreases in accordance with the angle between an optical axis of the incident light and a referential axis of an exposure apparatus. Outside of the predetermined angle detection range, the amount of light is restricted depending on the direction in which the optical axis of the light is shifted from the angle detection range. The amount of light incident on the detector continuously increases or decreases in accordance with the angle between the optical axis of the incident light and the referential axis when the light is made incident within the angle detection range by means of the light restriction means. It is therefore possible to determine the angle of the incident light from the output value of the detector. When the light is made incident outside of the angle detection range, and since the amount of incident light is restricted in accordance with the direction in which the light is shifted, it is possible to determine the direction in which the light is shifted.
摘要:
An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.
摘要:
An exposure method for exposing a sensitive layer on a semiconductor wafer to an integrated-circuit pattern of a mask. The exposure is effected by a combination of a primary exposure step for exposing the sensitive layer to the pattern with a beam of high resolution and a secondary exposure step for exposing the sensitive layer with a beam of lower resolution and by an amount which does not have a substantial effect on the sensitization of the sensitive layer. By the combined exposures, the exposure time can be reduced as compared with that required in the exposure only through a high-resolution exposure.
摘要:
An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.
摘要:
A measuring method that utilizes a bandpass filter and a measurement apparatus to measure an intensity of light having a predetermined wavelength among lights emitted from a light source, the bandpass filter transmitting the light having the predetermined wavelength, the measurement apparatus measuring an absolute intensity of an incident light includes the steps of measuring an output of the measurement apparatus continuously, stopping or starting an emission of the light source in the measuring step, calculating a first extreme value t→t0−0 and a second extreme value t→t0+0 in the output of the measurement apparatus at time t0 where t is time in the measuring step, and t0 is time when the emission of the light source stops; and calculating a difference between the first extreme value t→t0−0 and the second extreme value t→t0+0.
摘要翻译:一种利用带通滤波器和测量装置测量从光源发出的光中的具有预定波长的光的强度的测量方法,所述带通滤光器透射具有预定波长的光,所述测量装置测量绝对强度 入射光包括在测量步骤中连续地测量测量设备的输出,停止或开始光源的发射的步骤,计算第一极限值t→t 0 -0和 在测量步骤的时间t 0 0时,测量装置的输出中的第二极值t-> t <0> 0 <0>,其中t是测量步骤中的时间,t 0 SUB>是光源的发射停止的时刻; 以及计算第一极限值t-> t <0> -0和第二极值t→t 0 + 0之间的差值。
摘要:
An apparatus and method for detecting an alignment mark on a substrate using electron beams. The method include the steps of setting an accelerating voltage of the electron beams in accordance with the layer structure of the substrate, irradiating the substrate with the electron beams having the accelerating voltage set in the setting step, and detecting one of radiation and electrons from the substrate after the irradiating step is performed, and determining the position of the alignment mark based on the detecting operation. The apparatus includes a device for setting such an accelerating voltage, a device for irradiating the substrate with the electron beams, and a detector for detecting one of the radiation and the electrons. In one embodiment, fluorescent X-rays are detected, while in another embodiment secondary electrons or backscattered electrons are detected.