公开(公告)号：US09628735B2

公开(公告)日：2017-04-18

申请号：US14745954

申请日：2015-06-22

Applicant: OmniVision Technologies, Inc.

Inventor： Bowei Zhang ,  Ming-Kai Hsu

IPC: H04N5/335 ,  H04N5/374 ,  H04N5/33 ,  H04N9/04 ,  G06T3/40

CPC classification number: H04N5/374 ,  G06T3/4053 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14634 ,  H01L27/14645 ,  H04N5/33 ,  H04N5/332 ,  H04N9/045

Abstract: An imaging system with single-photon-avalanche-diodes (SPADs) and sensor translation for capturing a plurality of first images to enable generation of an enhanced-resolution image includes (a) an image sensor with SPAD pixels for capturing the plurality of first images at a plurality of spatially shifted positions of the image sensor, respectively, and (b) an actuator for translating the image sensor, parallel to its light receiving surface, to place the image sensor at the plurality of spatially shifted positions. A method for capturing a plurality of first images that enable composition of an enhanced-resolution image includes (a) translating an image sensor parallel to its light receiving surface to place the image sensor at a plurality of spatially shifted positions, and (b) capturing, using SPAD pixels implemented in pixel array of the image sensor, the plurality of first images at the plurality of spatially shifted positions, respectively.

公开(公告)号：US09160949B2

公开(公告)日：2015-10-13

申请号：US13854446

申请日：2013-04-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Zhiqiang Lin

IPC: H04N5/361 ,  H01L31/02 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/02 ,  H01L31/02027 ,  H01L31/107

Abstract: A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material.

Abstract translation: 光子检测装置包括具有布置在半导体材料的第一区域中的平面结的光电二极管。 深沟槽隔离（DTI）结构设置在半导体材料中。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括在DTI结构的内表面内衬的电介质层和设置在DTI结构内的电介质层上的掺杂半导体材料。 设置在DTI结构内的掺杂半导体材料耦合到偏置电压，以将半导体材料的第一区域中的光电二极管与半导体材料的第二区域隔离。

公开(公告)号：US20140291481A1

公开(公告)日：2014-10-02

申请号：US13854446

申请日：2013-04-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Zhiqiang Lin

IPC: H04N5/361 ,  H01L31/02

CPC classification number: H04N5/361 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/02 ,  H01L31/02027 ,  H01L31/107

Abstract: A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material.

Abstract translation: 光子检测装置包括具有布置在半导体材料的第一区域中的平面结的光电二极管。 深沟槽隔离（DTI）结构设置在半导体材料中。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括在DTI结构的内表面内衬的电介质层和设置在DTI结构内的电介质层上的掺杂半导体材料。 设置在DTI结构内的掺杂半导体材料耦合到偏置电压，以将半导体材料的第一区域中的光电二极管与半导体材料的第二区域隔离。

公开(公告)号：US20180124372A1

公开(公告)日：2018-05-03

申请号：US15341374

申请日：2016-11-02

Applicant: OmniVision Technologies, Inc.

Inventor： Zheng Yang ,  Eiichi Funatsu ,  Sohei Manabe ,  Keiji Mabuchi ,  Dajiang Yang ,  Duli Mao ,  Bowei Zhang

IPC: H04N13/00 ,  H04N13/02 ,  G06T7/00 ,  H04N5/353 ,  H04N5/378 ,  G06T5/00 ,  G06T5/50 ,  H01L27/146

CPC classification number: H04N13/106 ,  G01B11/24 ,  G06T5/001 ,  G06T5/50 ,  G06T7/586 ,  G06T7/593 ,  G06T2207/10028 ,  G06T2207/10144 ,  G06T2207/10152 ,  G06T2207/20224 ,  H01L27/146 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/3535 ,  H04N5/37452 ,  H04N5/378 ,  H04N13/254 ,  H04N13/271 ,  H04N2013/0092

Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.

公开(公告)号：US20180019268A1

公开(公告)日：2018-01-18

申请号：US15213082

申请日：2016-07-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Vincent Venezia ,  Gang Chen ,  Dyson H. Tai ,  Duli Mao

IPC: H01L27/144 ,  H01L31/107 ,  H01L31/0232

CPC classification number: H01L27/1443 ,  G01J2001/442 ,  H01L27/14603 ,  H01L27/1464 ,  H01L31/02027 ,  H01L31/02327 ,  H01L31/107

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.

公开(公告)号：US20160116409A1

公开(公告)日：2016-04-28

申请号：US14526161

申请日：2014-10-28

Applicant: OmniVision Technologies, Inc.

Inventor： Dominic Massetti ,  Bowei Zhang

IPC: G01N21/64 ,  G01N21/05

CPC classification number: B01L3/502715 ,  B01L2300/0654 ,  B01L2300/0663 ,  B01L2300/0877 ,  B01L2300/0887 ,  B01L2400/0487 ,  G01N21/253 ,  G01N21/6454

Abstract: A color-sensitive image sensor with embedded microfluidics includes a silicon substrate having (a) at least one recess partly defining at least one embedded microfluidic channel and (b) a plurality of photosensitive regions for generating position-sensitive electrical signals in response to light from the at least one recess, wherein at least two of the photosensitive regions are respectively located at at least two mutually different depth ranges, relative to the at least one recess, to provide color information. A wafer-level manufacturing method produces a plurality of such color-sensitive image sensors. A method for generating a color image of a fluidic sample includes performing imaging, onto a plurality of photosensitive regions of a silicon substrate, of a fluidic sample deposited in a microfluidic channel embedded in the silicon substrate, and generating color information based upon penetration depth of light into the silicon substrate.

Abstract translation: 具有嵌入式微流体的色敏图像传感器包括硅衬底，其具有（a）部分地限定至少一个嵌入式微流体通道的至少一个凹部和（b）多个感光区域，用于响应于来自 所述至少一个凹部，其中至少两个所述感光区域相对于所述至少一个凹部分别位于至少两个彼此不同的深度范围内，以提供颜色信息。 晶片级制造方法产生多个这样的色敏图像传感器。 一种用于产生流体样品的彩色图像的方法包括：在硅衬底的多个光敏区域上进行沉积在嵌入在硅衬底中的微流体通道中的流体样品的成像，并且基于穿透深度 光入硅衬底。