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公开(公告)号：US11056857B2
公开(公告)日：2021-07-06
申请号：US16642610
申请日：2018-09-19
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Matthias Peter , Jan Wagner
Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1
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公开(公告)号：US10727645B2
公开(公告)日：2020-07-28
申请号：US16075853
申请日：2017-03-13
Applicant: OSRAM OLED GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Löffler
Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.
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公开(公告)号：US11695253B2
公开(公告)日：2023-07-04
申请号：US17720794
申请日：2022-04-14
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
CPC classification number: H01S5/22 , H01S5/04253 , H01S5/04254 , H01S5/3211 , H01S5/32341 , H01S2301/16
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
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公开(公告)号：US11165223B2
公开(公告)日：2021-11-02
申请号：US16890776
申请日：2020-06-02
Applicant: OSRAM OLED GMBH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Loeffler
IPC: H01S5/06 , H01L33/50 , H01S5/00 , F21K9/64 , H01S5/22 , H01S5/30 , H01S5/34 , H01L33/18 , F21Y115/30
Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.
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公开(公告)号：US20200220330A1
公开(公告)日：2020-07-09
申请号：US16642610
申请日：2018-09-19
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Matthias Peter , Jan Wagner
Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1
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Patent Agency Ranking
公开(公告)号：US11626707B2
公开(公告)日：2023-04-11
申请号：US17193951
申请日：2021-03-05
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.
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公开(公告)号：US20210249839A1
公开(公告)日：2021-08-12
申请号：US17193951
申请日：2021-03-05
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.
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公开(公告)号：US11004876B2
公开(公告)日：2021-05-11
申请号：US16528307
申请日：2019-07-31
Applicant: OSRAM OLED GMBH
Inventor： Christoph Eichler , Andre Somers , Harald Koenig , Bernhard Stojetz , Andreas Loeffler , Alfred Lell
IPC: H01L21/66 , H01L27/12 , H01L21/02 , H01L21/20 , H01L21/762 , H01S5/22 , H01L33/02 , H01L33/00 , H01L21/268 , H01L21/3105 , H01L21/324 , H01S5/20 , H01S5/223 , H01L33/08 , H01L33/12
Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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公开(公告)号：US20200220325A1
公开(公告)日：2020-07-09
申请号：US16641851
申请日：2018-08-10
Applicant: OSRAM OLED GmbH
Inventor： Matthias Peter , Teresa Wurm , Christoph Eichler
IPC: H01S5/042 , H01L33/14 , H01L31/0304 , H01L31/0232 , H01S5/30 , H01S5/026 , H01S5/343
Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.
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公开(公告)号：US10693033B2
公开(公告)日：2020-06-23
申请号：US16452015
申请日：2019-06-25
Applicant: OSRAM OLED GMBH
Inventor： Alfred Lell , Andreas Löffler , Christoph Eichler , Bernhard Stojetz , André Somers
IPC: H01L33/00 , H01L21/687 , H01L33/26 , H01L21/67 , H01L33/62 , H01S5/10 , H01S5/22 , H01S5/40 , H01S5/32 , H01S5/026 , H01S5/20 , H01S5/227 , H01L33/32 , H01S5/323
Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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