Light Emitting Device and Method for Manufacturing Light Emitting Device

    公开(公告)号:US20190326490A1

    公开(公告)日:2019-10-24

    申请号:US16382008

    申请日:2019-04-11

    Abstract: A light-emitting device and a method for manufacturing a light emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip having a light-outcoupling surface and an optical element arranged on the light-outcoupling surface, wherein the light-emitting semiconductor chip is laterally surrounded by a frame element in a form-locking manner, wherein the optical element is mounted on the frame element, wherein the frame element projects beyond the light-outcoupling surface in a vertical direction such that a gas-filled gap is present at least in a partial region between the light-outcoupling surface and the optical element, and wherein the frame element has a channel connecting the gap to an atmosphere surrounding the light-emitting device.

    OPTOELECTRONIC COMPONENT, OPTOELECTRONIC MODULE, AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

    公开(公告)号:US20190013451A1

    公开(公告)日:2019-01-10

    申请号:US16066552

    申请日:2017-01-10

    Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

    OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

    公开(公告)号:US20180102348A1

    公开(公告)日:2018-04-12

    申请号:US15719810

    申请日:2017-09-29

    Abstract: An optoelectronic component includes a carrier, wherein a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are arranged above a top side of the carrier, the optoelectronic semiconductor chips each include a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, the undersides of the optoelectronic semiconductor chips face the top side of the carrier, a first potting material is arranged above the top side of the carrier, the first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, and a second potting material is arranged above the top side of the carrier, and the second potting material covering the first potting material.

    VARISTOR PASTE, OPTOELECTRONIC COMPONENT, METHOD OF PRODUCING A VARISTOR PASTE AND METHOD OF PRODUCING A VARISTOR ELEMENT
    15.
    发明申请
    VARISTOR PASTE, OPTOELECTRONIC COMPONENT, METHOD OF PRODUCING A VARISTOR PASTE AND METHOD OF PRODUCING A VARISTOR ELEMENT 审中-公开
    VARISTOR PASTE,OPTOELECTRONIC COMPONENT,METHOD OF PRODUCTION A VARISTOR PASTE AND METHODS PRODUCY A VARISTOR ELEMENT

    公开(公告)号:US20160307674A1

    公开(公告)日:2016-10-20

    申请号:US15101136

    申请日:2014-12-02

    Abstract: A varistor paste includes a matrix material and particles embedded into the matrix material, wherein the matrix material without embedded particles has a viscosity of less than 0.8 Pa·s, and the embedded particles include varistor particles. An optoelectronic component includes an optoelectronic semiconductor chip and a varistor element connected in parallel with the optoelectronic semiconductor chip, wherein the varistor element includes a matrix material and particles embedded into the matrix material, the embedded particles include varistor particles, and the matrix material has a glass transition temperature of more than 130° C. A method of producing a varistor paste includes providing a matrix material having a viscosity of less than 0.8 Pa·s; and embedding particles into the matrix material to form a varistor paste, wherein the embedded particles include varistor particles.

    Abstract translation: 压敏电阻糊包括基质材料和嵌入基质材料中的颗粒,其中不含嵌入颗粒的基体材料具有小于0.8Pa·s的粘度,并且嵌入的颗粒包括变阻器颗粒。 光电子部件包括与光电子半导体芯片并联连接的光电子半导体芯片和变阻器元件,其中,所述变阻器元件包括嵌入到所述基体材料中的基体材料和微粒,所述嵌入粒子包括变阻器粒子,所述基体材料具有 玻璃化转变温度大于130℃。制造非线性电阻糊的方法包括提供粘度小于0.8Pa·s的基质材料; 并将颗粒嵌入基质材料中以形成压敏胶浆,其中所述嵌入的颗粒包括变阻器颗粒。

    Light emitting device and method for manufacturing light emitting device

    公开(公告)号:US11069844B2

    公开(公告)日:2021-07-20

    申请号:US16382008

    申请日:2019-04-11

    Abstract: A light-emitting device and a method for manufacturing a light emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip having a light-outcoupling surface and an optical element arranged on the light-outcoupling surface, wherein the light-emitting semiconductor chip is laterally surrounded by a frame element in a form-locking manner, wherein the optical element is mounted on the frame element, wherein the frame element projects beyond the light-outcoupling surface in a vertical direction such that a gas-filled gap is present at least in a partial region between the light-outcoupling surface and the optical element, and wherein the frame element has a channel connecting the gap to an atmosphere surrounding the light-emitting device.

    Heat transmissive optoelectronic component and module

    公开(公告)号:US10944033B2

    公开(公告)日:2021-03-09

    申请号:US16066552

    申请日:2017-01-10

    Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

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