公开(公告)号：US20120171791A1

公开(公告)日：2012-07-05

申请号：US13207439

申请日：2011-08-11

申请人： PO-MIN TU ,  SHIH-CHENG HUANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L21/78

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0095 ,  Y10S438/945

摘要： A method for fabricating an LED chip is provided. Firstly, a SiO2 pattern layer is formed on a top surface of a substrate. Then, lighting structures are grown on a portion of the top surface of substrate without the SiO2 pattern layer thereon. Thereafter, the SiO2 pattern layer is removed by wet etching to form spaces between bottoms of the lighting structures and substrate. An etching solution is used to permeate into the spaces and etch the lighting structures from the bottoms thereof, whereby the lighting structures each with a trapezoid shape is formed. Sidewalls of each of the lighting structures are inclined inwardly along a top-to-bottom direction.

摘要翻译： 提供一种制造LED芯片的方法。 首先，在基板的上表面上形成SiO 2图形层。 然后，在衬底的顶表面的一部分上生长照明结构，而不在其上形成SiO 2图案层。 此后，通过湿蚀刻去除SiO 2图案层，以在照明结构和基板的底部之间形成空间。 使用蚀刻溶液渗透到空间中并从其底部蚀刻照明结构，由此形成各自具有梯形形状的照明结构。 每个照明结构的侧壁沿着顶部到底部的方向向内倾斜。

公开(公告)号：US20120168797A1

公开(公告)日：2012-07-05

申请号：US13209452

申请日：2011-08-15

申请人： SHIH-CHENG HUANG ,  PO-MIN TU

发明人： SHIH-CHENG HUANG ,  PO-MIN TU

IPC分类号： H01L33/22

CPC分类号： H01L33/007 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/20

摘要： A method for manufacturing a light emitting diode chip, comprising steps: providing a substrate with a first patterned blocking layer formed thereon; growing a first n-type semiconductor layer on the substrate between the constituting parts of first patterned blocking layer, and stopping the growth of the first n-type semiconductor layer before the first n-type semiconductor layer completely covers the first patterned blocking layer; removing the first patterned blocking layer, whereby a plurality of first holes are formed at position where the first patterned blocking layer is originally existed; continuing the growth of the first n-type semiconductor layer until the first holes are completely covered by the first n-type semiconductor layer; and forming an active layer and a p-type current blocking layer on the first n-type semiconductor layer successively.

摘要翻译： 一种制造发光二极管芯片的方法，包括以下步骤：为基板提供形成在其上的第一图案化阻挡层; 在第一图案化阻挡层的构成部分之间的衬底上生长第一n型半导体层，并且在第一n型半导体层完全覆盖第一图案化阻挡层之前停止第一n型半导体层的生长; 去除第一图案化阻挡层，由此在最初存在第一图案化阻挡层的位置处形成多个第一孔; 继续第一n型半导体层的生长，直到第一孔被第一n型半导体层完全覆盖; 以及在第一n型半导体层上依次形成有源层和p型电流阻挡层。

公开(公告)号：US20120086032A1

公开(公告)日：2012-04-12

申请号：US13171472

申请日：2011-06-29

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/60

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/382 ,  H01L33/46

摘要： A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

摘要翻译： 半导体发光结构包括硅衬底，分布式布拉格反射器，半导体结构层和外延连接层。 硅衬底具有顶表面。 分布式布拉格反射器形成在硅衬底的顶表面上。 半导体结构层被配置为发光。 外延连接层放置在分布式布拉格反射器和半导体结构层之间。 沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。

公开(公告)号：US20110114983A1

公开(公告)日：2011-05-19

申请号：US13015590

申请日：2011-01-28

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  WEN-YU LIN ,  CHIH-PENG HSU ,  SHIH-HSIUNG CHAN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  WEN-YU LIN ,  CHIH-PENG HSU ,  SHIH-HSIUNG CHAN

IPC分类号： H01L33/10

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

摘要翻译： 具有III族氮化物半导体的光电器件包括导电层，位于导电层上的金属镜层和位于金属镜面层上的III族氮化物半导体层。 III族氮化物半导体层在其上限定了许多微结构。 每个微结构包括至少一个成角度的面，并且每个微结构的倾斜面是III族氮化物半导体层的晶体面。

公开(公告)号：US20120175646A1

公开(公告)日：2012-07-12

申请号：US13305757

申请日：2011-11-29

申请人： SHIH-CHENG HUANG ,  PO-MIN TU

发明人： SHIH-CHENG HUANG ,  PO-MIN TU

IPC分类号： H01L33/32

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

摘要： An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects.

摘要翻译： LED模块包括基座，形成在基座上的电路层和多个LED，每个LED具有连接到电路层的LED管芯。 电路层包括多个连接部分。 每个连接部分包括彼此电绝缘和间隔开的第一连接部分和第二连接部分。 每个LED包括具有第一部分的电极层和与第一部分电绝缘并分别电连接相应连接部分的第一和第二连接部分的第二部分。 LED管芯与第二部分电连接。 在LED管芯上形成透明导电层，并将LED管芯电连接到电极层的第一部分。 除了透明导电层连接之外，电绝缘层位于LED管芯之间并围绕LED管芯。

公开(公告)号：US20120100648A1

公开(公告)日：2012-04-26

申请号：US13216244

申请日：2011-08-24

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/46

摘要： A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.

摘要翻译： 制造发光芯片的方法包括以下步骤：提供其上具有多个分离的外延岛的衬底，其中所述外延岛通过沟道彼此间隔开; 用绝缘材料填充通道; 在绝缘材料和外延岛上依次形成反射层，过渡层和基底; 去除衬底和绝缘材料以暴露通道; 并且切割反射层，过渡层和基底，以沿通道形成多个独立的芯片。

公开(公告)号：US20120097976A1

公开(公告)日：2012-04-26

申请号：US13214254

申请日：2011-08-22

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/02 ,  H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/405

摘要： A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

摘要翻译： 发光二极管芯片包括导电基板，设置在基板上的反射层，形成在反射层上的半导体结构，设置在半导体结构上的电极和延伸穿过半导体结构的多个狭缝。 半导体结构包括形成在反射层上的P型半导体层，形成在P型半导体层上的发光层和形成在发光层上的N型半导体层。 在半导体结构中和电极周围限定电流扩散区。 槽位于电流扩散区域外部。

公开(公告)号：US20120018847A1

公开(公告)日：2012-01-26

申请号：US13013825

申请日：2011-01-26

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/16

摘要： A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.

摘要翻译： 氮化镓系半导体器件包括复合衬底和氮化镓层。 复合衬底包括硅衬底和填料。 硅衬底包括第一表面和与第一表面相对的第二表面，并且第一表面在其中限定多个凹槽。 将填料填充到硅衬底的第一表面上的槽数中。 填料的热膨胀系数大于硅衬底的热膨胀系数。 氮化镓层形成在硅衬底的第二表面上。

公开(公告)号：US20120261696A1

公开(公告)日：2012-10-18

申请号：US13313005

申请日：2011-12-07

申请人： SHIH-CHENG HUANG ,  PO-MIN TU

发明人： SHIH-CHENG HUANG ,  PO-MIN TU

IPC分类号： H01L33/30 ,  H01L33/46

CPC分类号： H01L33/46 ,  H01L33/32

摘要： A light emitting device (LED) epitaxial structure includes a substrate, a nitride semiconductor layer, a patterned oxide total-reflective layer, a first-type semiconductor layer, an active layer and a second-type semiconductor layer. The nitride semiconductor layer is formed on the substrate. The patterned oxide total-reflective layer is formed on the nitride semiconductor layer. An upper surface of the nitride semiconductor layer is partially exposed out from the oxide total-reflective layer. The first-type semiconductor layer is arranged on the exposed upper surface of the nitride semiconductor layer and covers the oxide total-reflective layer. The active layer is arranged on the first-type semiconductor layer. The second-type semiconductor layer is arranged on the active layer.

摘要翻译： 发光器件（LED）外延结构包括衬底，氮化物半导体层，图案化氧化物全反射层，第一类型半导体层，有源层和第二类型半导体层。 在衬底上形成氮化物半导体层。 图案化的氧化物全反射层形成在氮化物半导体层上。 氮化物半导体层的上表面部分地从氧化物全反射层露出。 第一型半导体层布置在氮化物半导体层的暴露的上表面上并覆盖氧化物全反射层。 有源层布置在第一型半导体层上。 第二类型半导体层被布置在有源层上。

公开(公告)号：US20120156815A1

公开(公告)日：2012-06-21

申请号：US13207441

申请日：2011-08-11

申请人： SHIH-CHENG HUANG ,  PO-MIN TU

发明人： SHIH-CHENG HUANG ,  PO-MIN TU

IPC分类号： H01L21/78

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20

摘要： A method for fabricating an LED chip includes: providing a sapphire substrate with a SiO2 pattern layer formed on the substrate; forming a lighting structure on the sapphire substrate with the SiO2 pattern layer; forming grooves in the lighting structure to divide the lighting structure into a number of light emitting regions, the grooves extending to the sapphire substrate and revealing the SiO2 pattern layer; removing the SiO2 pattern layer and forming spaces between the lighting structure and the substrate; etching part of the light emitting regions, and then forming electrodes on the light emitting regions; and cutting the sapphire substrate along the grooves to obtain a plurality of LED chips.

摘要翻译： 一种制造LED芯片的方法包括：在蓝宝石衬底上提供形成在衬底上的SiO2图案层; 在所述蓝宝石衬底上用所述SiO2图案层形成照明结构; 在所述照明结构中形成凹槽以将所述照明结构分成多个发光区域，所述凹槽延伸到所述蓝宝石衬底并露出所述SiO 2图案层; 去除SiO 2图案层并在照明结构和基板之间形成空间; 蚀刻部分发光区域，然后在发光区域上形成电极; 沿着凹槽切割蓝宝石衬底以获得多个LED芯片。