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公开(公告)号：US07894918B2
公开(公告)日：2011-02-22
申请号：US11494099
申请日：2006-07-27
申请人： Hemant Kanodia , Mikael H. Davidsson , Rajani Nair , Anne Poorman , Joachim Ruhe , Patrick M. Martin
发明人： Hemant Kanodia , Mikael H. Davidsson , Rajani Nair , Anne Poorman , Joachim Ruhe , Patrick M. Martin
IPC分类号： G05B11/01
CPC分类号： G05B23/0216 , G05B2219/32077
摘要： The present invention is directed to a batch system for managing and analyzing batch runs of a batch process in a process cell. The batch system includes a computer readable medium, a plurality of batch management routines and a plurality of batch analysis routines stored on the computer readable medium and adapted to be executed by the at least one processor. The batch management routines are operable to schedule batch runs and create and edit recipes for the batch process. The batch analysis routines include a batch filter routine, a golden batch routine, a cycle time analysis routine, and a report wizard routine.
摘要翻译： 本发明涉及一种批处理系统，用于管理和分析处理单元中批处理过程的批处理。 批处理系统包括计算机可读介质，多个批处理管理程序和存储在计算机可读介质上并适于由至少一个处理器执行的多个批处理分析程序。 批处理管理程序可用于调度批处理运行，并为批处理过程创建和编辑配方。 批处理分析程序包括批量过滤程序，黄金批处理程序，循环时间分析程序和报告向导程序。
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12.发明授权公开(公告)号：US07049034B2
公开(公告)日：2006-05-23
申请号：US10658039
申请日：2003-09-09
IPC分类号： G01F9/00
CPC分类号： G03F1/30
摘要： The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFx and even more particularly may be comprised of MgF2 deposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to Al2O3 and AlxNy.
摘要翻译： 本发明一般涉及光学光刻技术，更具体地说，涉及用于制造半导体器件的透明或半透明相移掩模的制造。 特别地，本发明利用内部蚀刻停止层和沉积的基本上透明的层，沉积的部分透明的层或在其它常规光掩模中沉积的不透明的层。 本发明的光掩模用于制造半导体器件或集成电路。 在本发明的优选实施例中，涉及aaPSM，其包括：图案化不透明层，其具有第一组至少一个透光开口和第二组至少一个透光开口; 在不透明层下面沉积的基本上透明的层，其中沉积的基本上透明的层具有到第一组至少一个透光开口的每个开口的对应的透光开口，沉积的基本上透明的层下面的基本透明的蚀刻停止层， 以及位于透明蚀刻停止层下面的基本上透明的基底。 在优选的实施方案中，本发明的内部基本上透明的蚀刻停止层由MgF x X x组成，甚至更具体地可以由蒸发下沉积的MgF 2组成。 可用于本发明的基本上透明的蚀刻停止层的其它材料包括但不限于Al 2 O 3 O 3和N 2 O 3 > N 。
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13.发明授权公开(公告)号：US08974683B2
公开(公告)日：2015-03-10
申请号：US13228625
申请日：2011-09-09
IPC分类号： H01L21/302 , H01L21/027 , H01J37/32 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。
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14.发明申请METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES 有权用于控制关键特征的关键尺寸和粗糙度的方法和系统公开(公告)号：US20120280140A1
公开(公告)日：2012-11-08
申请号：US13099432
申请日：2011-05-03
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光刻胶浮雕特征。
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15.发明授权Method and system for modifying patterned photoresist using multi-step ion implantation 有权使用多步离子注入修饰图案化光刻胶的方法和系统公开(公告)号：US08133804B1
公开(公告)日：2012-03-13
申请号：US12896046
申请日：2010-10-01
IPC分类号： H01L21/425
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译： 一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。 每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。 执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。 在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。
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16.发明授权Method and system for modifying substrate relief features using ion implantation 有权使用离子注入修改底物浮雕特征的方法和系统公开(公告)号：US08778603B2
公开(公告)日：2014-07-15
申请号：US13046136
申请日：2011-03-11
IPC分类号： G21G1/10
CPC分类号： H01J37/317 , G03F7/40 , H01J37/3171 , H01J37/3174 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01L21/0273 , H01L21/2236 , H01L21/263 , H01L21/265 , H01L29/66787
摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
摘要翻译： 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。
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17.发明授权Method and system for controlling critical dimension and roughness in resist features 有权用于控制抗蚀剂特征的临界尺寸和粗糙度的方法和系统公开(公告)号：US08354655B2
公开(公告)日：2013-01-15
申请号：US13099432
申请日：2011-05-03
IPC分类号： H01J37/32
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光致抗蚀剂浮雕特征。
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18.发明申请METHOD AND SYSTEM FOR MODIFYING PATTERNED PHOTORESIST USING MULTI-STEP ION IMPLANTATION 有权使用多步离子植入修饰图案的方法和系统公开(公告)号：US20120083136A1
公开(公告)日：2012-04-05
申请号：US12896046
申请日：2010-10-01
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译： 一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。 每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。 执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。 在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。
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公开(公告)号：US20080127186A1
公开(公告)日：2008-05-29
申请号：US11494099
申请日：2006-07-27
申请人： Hemant Kanodia , Mikael H. Davidsson , Rajani Nair , Anne Poorman , Joachim Ruhe , Patrick M. Martin
发明人： Hemant Kanodia , Mikael H. Davidsson , Rajani Nair , Anne Poorman , Joachim Ruhe , Patrick M. Martin
IPC分类号： G06F9/46
CPC分类号： G05B23/0216 , G05B2219/32077
摘要： The present invention is directed to a batch system for managing and analyzing batch runs of a batch process in a process cell. The batch system includes a computer readable medium, a plurality of batch management routines and a plurality of batch analysis routines stored on the computer readable medium and adapted to be executed by the at least one processor. The batch management routines are operable to schedule batch runs and create and edit recipes for the batch process. The batch analysis routines include a batch filter routine, a golden batch routine, a cycle time analysis routine, and a report wizard routine.
摘要翻译： 本发明涉及一种批处理系统，用于管理和分析处理单元中批处理过程的批处理。 批处理系统包括计算机可读介质，多个批处理管理程序和存储在计算机可读介质上并适于由至少一个处理器执行的多个批处理分析程序。 批处理管理程序可用于调度批处理运行，并为批处理过程创建和编辑配方。 批处理分析程序包括批量过滤程序，黄金批处理程序，循环时间分析程序和报告向导程序。
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公开(公告)号：US5635428A
公开(公告)日：1997-06-03
申请号：US329108
申请日：1994-10-25
申请人： Patrick M. Martin , Dennis J. Yost
发明人： Patrick M. Martin , Dennis J. Yost
IPC分类号： H01L21/768 , H01L23/532 , H01L23/316 , H01L21/02
CPC分类号： H01L23/5329 , H01L21/76819 , H01L2924/0002
摘要： A semiconductor device includes conductor regions 24 and 26 on a layer of the semiconductor device; a first insulator layer 28 over and between the conductor regions 24 and 26; polyimide regions 30, 32, and 34 over the first insulator layer 28 in gaps between the conductor regions 24 and 26; and a second insulator layer 38 over the first insulator layer 28 and over the polyimide regions 30, 32, and 34. A surface of the second insulator layer 38 is substantially planar.
摘要翻译： 半导体器件在半导体器件的层上包括导体区域24和26; 在导体区域24和26之间和之间的第一绝缘体层28; 在导体区域24和26之间的间隙中的第一绝缘体层28上的聚酰亚胺区域30,32和34; 以及在第一绝缘体层28上方以及聚酰亚胺区域30,32和34之上的第二绝缘体层38.第二绝缘体层38的表面基本上是平面的。
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