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1.发明申请公开(公告)号：US20130062309A1
公开(公告)日：2013-03-14
申请号：US13228625
申请日：2011-09-09
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。
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2.发明授权公开(公告)号：US08974683B2
公开(公告)日：2015-03-10
申请号：US13228625
申请日：2011-09-09
IPC分类号： H01L21/302 , H01L21/027 , H01J37/32 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。
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3.发明授权Method and system for controlling critical dimension and roughness in resist features 有权用于控制抗蚀剂特征的临界尺寸和粗糙度的方法和系统公开(公告)号：US08354655B2
公开(公告)日：2013-01-15
申请号：US13099432
申请日：2011-05-03
IPC分类号： H01J37/32
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光致抗蚀剂浮雕特征。
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4.发明申请METHOD AND SYSTEM FOR MODIFYING PATTERNED PHOTORESIST USING MULTI-STEP ION IMPLANTATION 有权使用多步离子植入修饰图案的方法和系统公开(公告)号：US20120083136A1
公开(公告)日：2012-04-05
申请号：US12896046
申请日：2010-10-01
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译： 一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。 每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。 执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。 在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。
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5.发明申请METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES 有权用于控制关键特征的关键尺寸和粗糙度的方法和系统公开(公告)号：US20120280140A1
公开(公告)日：2012-11-08
申请号：US13099432
申请日：2011-05-03
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译： 一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。 该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。 该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光刻胶浮雕特征。
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6.发明授权Method and system for modifying patterned photoresist using multi-step ion implantation 有权使用多步离子注入修饰图案化光刻胶的方法和系统公开(公告)号：US08133804B1
公开(公告)日：2012-03-13
申请号：US12896046
申请日：2010-10-01
IPC分类号： H01L21/425
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译： 一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。 每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。 执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。 在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。
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7.发明申请METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTION 有权使用离子注入修饰衬底缓冲特征的方法和系统公开(公告)号：US20110223546A1
公开(公告)日：2011-09-15
申请号：US13046136
申请日：2011-03-11
CPC分类号： H01J37/317 , G03F7/40 , H01J37/3171 , H01J37/3174 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01L21/0273 , H01L21/2236 , H01L21/263 , H01L21/265 , H01L29/66787
摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
摘要翻译： 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。
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8.发明授权公开(公告)号：US08460569B2
公开(公告)日：2013-06-11
申请号：US13081692
申请日：2011-04-07
CPC分类号： H01L21/306 , H01L21/2658 , H01L21/26586 , H01L21/3105 , H01L21/311 , H01L21/31155 , H01L21/321 , H01L21/3213
摘要： A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
摘要翻译： 图案化衬底的方法包括在衬底上提供一组图案化特征，将一组图案化特征暴露于在多个角度上入射到衬底上的一定剂量的离子，以及选择性地蚀刻图案化特征的暴露部分。
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9.发明授权Method and system for modifying photoresist using electromagnetic radiation and ion implantation 有权使用电磁辐射和离子注入修饰光致抗蚀剂的方法和系统公开(公告)号：US08435727B2
公开(公告)日：2013-05-07
申请号：US12896036
申请日：2010-10-01
申请人： Ludovic Godet , Patrick M. Martin
发明人： Ludovic Godet , Patrick M. Martin
IPC分类号： G03F7/20
CPC分类号： C23C16/50 , G03F7/405 , G03F7/427 , G03F7/7045 , G03F7/70875 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01L21/0273
摘要： A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.
摘要翻译： 降低设置在基板上的抗蚀剂特征的表面粗糙度的方法包括产生具有等离子体鞘和其中的离子的等离子体。 使用等离子体护套改性剂改变等离子体和等离子体护套之间的边界的形状，使得面对衬底的边界的一部分不平行于由衬底限定的平面。 在第一曝光期间，抗蚀剂特征暴露于具有所需波长的电磁辐射，并且离子在角度范围内被加速跨过具有改变形状的边界朝向抗蚀剂特征。
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10.发明申请公开(公告)号：US20120258600A1
公开(公告)日：2012-10-11
申请号：US13081692
申请日：2011-04-07
IPC分类号： H01L21/306
CPC分类号： H01L21/306 , H01L21/2658 , H01L21/26586 , H01L21/3105 , H01L21/311 , H01L21/31155 , H01L21/321 , H01L21/3213
摘要： A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
摘要翻译： 图案化衬底的方法包括在衬底上提供一组图案化特征，将一组图案化特征暴露于在多个角度上入射到衬底上的一定剂量的离子，以及选择性地蚀刻图案化特征的暴露部分。
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